Abstract: Methods and systems for increasing reliability of a data storage device are disclosed. During fabrication runs of a non-volatile memory (NVM) die, such as a NAND, there may be a number of memory cells designated as erase cells. When one or more erase cells are physically adjacent to programmed memory cell, electrical effects of the erase cell may cause a bit to flip in the adjacent good memory cell. To mitigate this effect, an LDPC engine is used to generate additional parity bits for the erased bit/cells. When a host requests data from the NVM, the parity bits may be used to correct additional errors because of the erased state to programmed state bit flips.

Abstract: Methods and systems for increasing reliability of a data storage device are disclosed. During fabrication runs of a non-volatile memory (NVM) die, such as a NAND, there may be a number of memory cells designated as erase cells. When one or more erase cells are physically adjacent to programmed memory cell, electrical effects of the erase cell may cause a bit to flip in the adjacent good memory cell. To mitigate this effect, an LDPC engine is used to generate additional parity bits for the erased bit/cells. When a host requests data from the NVM, the parity bits may be used to correct additional errors because of the erased state to programmed state bit flips.

Abstract: Aspects of a storage device are provided which allow for partitioning of memory based on partition commands received from a host device. The storage device includes a memory configured to store data, and a controller configured to partition the memory into multiple partitions based on a partition command received from the host device. The controller is further configured to switch from a first partition to a second partition in response to a partition switching command received from the host device, and the controller may execute a command received from the host device on data associated with the second partition. When the controller receives the command from the host device associated with data including a logical address, the controller may update the logical address based on the second partition and execute the command based on the updated logical address.

Abstract: Non-volatile memory and processes for reprogramming data posing a potential reliability concern are provided. A process is provided for distinguishing between cross-temperature effects and read disturb effects as part of determining whether to perform a maintenance operation such as reprogramming. A process is provided that compensates for cross-temperature effects while testing to determine whether to perform a maintenance operation. Applying temperature compensation attempts to remove cross-temperature effects so that testing accurately detects whether read disturb has occurred, without the effects of temperature. By reducing cross-temperature effects, maintenance operations can be more accurately scheduled for memory that has experienced read disturb, as opposed to cross-temperature effects.

Abstract: A die includes a plurality of memory cells. The die also includes a calculation circuit configured to determine a difference between a write temperature and a read temperature in response to a read request for user data stored in the memory cells. The die further includes a notification circuit configured to signal a cross-temperature condition in response to the difference satisfying a threshold.

Abstract: A die includes a plurality of memory cells. The die also includes a calculation circuit configured to determine a difference between a write temperature and a read temperature in response to a read request for user data stored in the memory cells. The die further includes a notification circuit configured to signal a cross-temperature condition in response to the difference satisfying a threshold.

Abstract: Non-volatile memory and processes for reprogramming data posing a potential reliability concern are provided. A process is provided for distinguishing between cross-temperature effects and read disturb effects as part of determining whether to perform a maintenance operation such as reprogramming. A process is provided that compensates for cross-temperature effects while testing to determine whether to perform a maintenance operation. Applying temperature compensation attempts to remove cross-temperature effects so that testing accurately detects whether read disturb has occurred, without the effects of temperature. By reducing cross-temperature effects, maintenance operations can be more accurately scheduled for memory that has experienced read disturb, as opposed to cross-temperature effects.

Abstract: A storage system and method for marginal write-abort detection using a memory parameter change is provided. In one embodiment, a method for detecting a write abort is provided that is performed in a storage system having a memory. The method comprises reading a lower page in memory; determining if any data is written in the lower page; and in response to determining that no data is written in the lower page: increasing source voltage for memory cells in the lower page; re-reading the lower page; determining if a read failure exists in the re-read lower page; and in response to determining that a read failure exists in the re-read lower page, detecting a write abort. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.