Patents by Inventor Dhaval Saraiya

Dhaval Saraiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor
    Patent number: 8273623
    Abstract: The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).
    Type: Grant
    Filed: February 14, 2012
    Date of Patent: September 25, 2012
    Assignee: Texas Instruments Incorporated
    Inventors: David L. Larkin, Lily X. Springer, Makoto Takemura, Ashish V. Gokhale, Dhaval A. Saraiya
  • INTEGRATED HIGH VOLTAGE CAPACITOR HAVING CAPACITANCE UNIFORMITY STRUCTURES AND A METHOD OF MANUFACTURE THEREFOR
    Publication number: 20120142164
    Abstract: The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).
    Type: Application
    Filed: February 14, 2012
    Publication date: June 7, 2012
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: David L. Larkin, Lily X. Springer, Makoto Takemura, Ashish V. Gokhale, Dhaval A. Saraiya
  • Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor
    Patent number: 8114731
    Abstract: The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).
    Type: Grant
    Filed: November 24, 2008
    Date of Patent: February 14, 2012
    Assignee: Texas Instruments Incorporated
    Inventors: David L. Larkin, Lily X. Springer, Makoto Takemura, Ashish V. Gokhale, Dhaval A. Saraiya
  • INTEGRATED HIGH VOLTAGE CAPACITOR HAVING CAPACITANCE UNIFORMITY STRUCTURES AND A METHOD OF MANUFACTURE THEREFOR
    Publication number: 20090075449
    Abstract: The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).
    Type: Application
    Filed: November 24, 2008
    Publication date: March 19, 2009
    Inventors: DAVID L. LARKIN, LILY X. SPRINGER, MAKOTO TAKEMURA, ASHISH V. GOKHALE, DHAVAL A. SARAIYA
  • Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor
    Patent number: 7470991
    Abstract: The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).
    Type: Grant
    Filed: October 13, 2005
    Date of Patent: December 30, 2008
    Assignee: Texas Instruments Incorporated
    Inventors: David L. Larkin, Lily X. Springer, Makoto Takemura, Ashish V. Gokhale, Dhaval A. Saraiya
  • Integrated high voltage capacitor having a top-level dielectric layer and a method of manufacture therefor
    Patent number: 7413947
    Abstract: The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes a second capacitor plate (160) located over the insulator (130) and a top-level dielectric layer (199) located at least partially along a sidewall of the second capacitor plate (160).
    Type: Grant
    Filed: January 17, 2006
    Date of Patent: August 19, 2008
    Assignee: Texas Instruments Incorporated
    Inventors: David L. Larkin, Ashish V. Gokhale, Dhaval A. Saraiya, Quang Xuan Mai
  • Integrated high voltage capacitor having a top-level dielectric layer and a method of manufacture therefor
    Publication number: 20060189068
    Abstract: The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes a second capacitor plate (160) located over the insulator (130) and a top-level dielectric layer (199) located at least partially along a sidewall of the second capacitor plate (160).
    Type: Application
    Filed: January 17, 2006
    Publication date: August 24, 2006
    Applicant: Texas Instruments Inc.
    Inventors: David Larkin, Ashish Gokhale, Dhaval Saraiya, Quang Mai
  • Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor
    Publication number: 20060189089
    Abstract: The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).
    Type: Application
    Filed: October 13, 2005
    Publication date: August 24, 2006
    Applicant: Texas Instruments Inc.
    Inventors: David Larkin, Lily Springer, Makoto Takemura, Ashish Gokhale, Dhaval Saraiya
  • Integrated high voltage capacitor and a method of manufacture therefor
    Publication number: 20060186450
    Abstract: The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes a second capacitor plate (160) located over the insulator (130).
    Type: Application
    Filed: October 13, 2005
    Publication date: August 24, 2006
    Applicant: Texas Instruments Inc.
    Inventors: David Larkin, Lily Springer, Makoto Takemura, Ashish Gokhale, Dhaval Saraiya