Abstract: A wide band-gap photo relay is provided. The wide band-gap photo relay includes first and second input terminals, first and second output terminals, a ground terminal, a light source, a photodiode array, and a depletion-mode wide band-gap semiconductor switch. The light source is configured to generate a light signal and has first and second ends coupled to the first and second input terminals, respectively. The photodiode array is disposed at a distance from the light source and has positive and negative terminals. The photodiode array senses the light signal and generates a voltage difference between the positive and negative terminals when the light signal is sensed. The positive terminal is coupled to the ground terminal. The depletion-mode wide band-gap semiconductor switch has a gate electrode coupled to the negative terminal, a drain electrode coupled to the first output terminal, and a source electrode coupled to the second output terminal.

Abstract: A wide-band-gap diode and manufacturing method thereof are provided. The method of manufacturing a wide-band-gap diode involves growing an N-type doped epitaxial layer on an N-doped substrate. P-type ions are implanted into the epitaxial layer to form an active area, a junction termination extension region, and an edge region. The active area exhibits an axially symmetric graticule pattern, with higher doping area density towards the center of the active area. The junction termination extension region surrounds the active area, and the edge region encircles both of the active area and the junction termination extension region to enhance the wide-band-gap diode's capability to withstand surge currents.

Abstract: A monolithic Opto-MOSFET relay and manufacturing method thereof are provided. The manufacturing method of the monolithic Opto-MOSFET relay involves using a low ion doping concentration substrate. In this method, a first P-N junction structure, a second P-N junction structure, and an N-P-N junction structure are formed within an epitaxial layer. Dry etching is employed to divide the epitaxial layer into a high-voltage region and a low-voltage region, which are electrically isolated from the each other. Subsequently, an isolation layer is deposited on the epitaxial layer, and photomask etching is performed to generate multiple patterns. A metal layer is then deposited to form a light emitting diode (LED) based on the pattern within the first P-N junction structure, a photodiode within the second P-N junction structure, and at least one MOSFET within the N-P-N junction structure.

Abstract: The invention provides a silicide capacitive micro electromechanical structure and fabrication method thereof, comprising a substrate, a passivation layer, a silicon layer, a first metal layer, and a dielectric layer. The passivation layer is formed on the substrate; the silicon layer and the first metal layer are formed on the passivation layer. The first metal layer includes a contact part and a conductive part. The contact parts contact at least a part of the silicon layer, and the conductive portion extends away from the silicon layer to electrically connect an external circuit. The dielectric layer is formed on the passivation layer, and at least the silicon layer and the first metal layer are covered by the dielectric layer. After an annealing process is performed, the conductive portion remains in contact with the silicon layer after the silicidation reaction to maintain an electrical connection with the external circuit.

Abstract: The present invention provides an integrating method for optoelectronic elements and circuits, including: providing a silicon wafer including a plurality of circuit structures; providing a plurality of optoelectronic element dies, and each optoelectronic element die including a substrate and an optoelectronic element structure; performing a die-to-wafer bonding process so that one optoelectronic element die is correspondingly bonded to one circuit structure of the silicon wafer through the optoelectronic element structure; performing a compression over-molding process to encapsulate the optoelectronic element dies and a surface of the silicon wafer by a molding material; performing a grinding and polishing process to remove an unnecessary portion of the molding material and an unnecessary portion of the substrate of each optoelectronic element die; and performing a dicing process to form a plurality of integrated structures with the optoelectronic elements and the circuits.

Abstract: The present invention provides an ultrasonic array transceiver method and module thereof. The method includes the step (a) providing an ultrasonic pixel array composed of N×M ultrasonic pixels; step (b), determining the number of a plurality of ultrasonic pixel groups in the ultrasonic pixel array; step (c), generate the first sound wave; step (d), transmit the first sound wave to obtain a plurality of second sound waves; step (e), receive the second sound waves, wherein the ultrasonic pixel received the second sound wave is located at the middle position or adjacent to the middle position of the ultrasonic pixel group; step (f), calculating the second sound waves to generate a pixel signal; step (g), repeating steps (c) to (f); and in step (h), determine an image based on pixel signals.

Abstract: The present invention provides an optocoupler, including a substrate, a gallium nitride light emitter, a gallium nitride light sensing switch, a reflective structure and a transmission medium. The gallium nitride light emitter and the gallium nitride light sensing switch are disposed on the substrate and electrically isolated from each other. The gallium nitride light emitter is used for emitting a light signal according to an input signal. The gallium nitride light sensing switch is used for sensing the light signal and generating an output signal accordingly. The reflective structure is used for reflecting the light signal. The transmission medium is at least between the gallium nitride light emitter, the gallium nitride light sensing switch and the reflective structure. The light signal from the gallium nitride light emitter is transmitted in the transmission medium and transmitted obliquely to the gallium nitride light sensing switch after being reflected by the reflective structure.

Abstract: The present disclosure provides a silicon carbide (SiC) opto-thyristor and a method for manufacturing the same. The SiC opto-thyristor includes a SiC substrate, a SiC light emitter and a SiC light-sensitive thyristor. In the method, a SiC epitaxy is mainly formed on the SiC substrate with the doped P-type and N-type semiconductor materials to define the regions for forming the SiC light emitter and the basic structures of the SiC light-sensitive thyristor. A passivation layer is deposited. Conducting channels for the SiC light emitter and the SiC light-sensitive thyristor are formed by an etching process. After patterning a metal conductor layer, a structure of electrical contacts of the SiC light emitter and the SiC light-sensitive thyristor is formed. Then, terminals of an input voltage and an output voltage of the silicon carbide opto-thyristor are formed after a wire bonding process upon the electrical contacts. Finally, a packaging process is performed.

Abstract: The invention provides a silicide capacitive micro electromechanical structure and fabrication method thereof, comprising a substrate, a passivation layer, a silicon layer, a first metal layer, and a dielectric layer. The passivation layer is formed on the substrate; the silicon layer and the first metal layer are formed on the passivation layer. The first metal layer includes a contact part and a conductive part. The contact parts contact at least a part of the silicon layer, and the conductive portion extends away from the silicon layer to electrically connect an external circuit. The dielectric layer is formed on the passivation layer, and at least the silicon layer and the first metal layer are covered by the dielectric layer. After an annealing process is performed, the conductive portion remains in contact with the silicon layer after the silicidation reaction to maintain an electrical connection with the external circuit.

Abstract: The present invention provides an ultrasonic array transceiver method and module thereof. The method includes the step (a) providing an ultrasonic pixel array composed of N×M ultrasonic pixels; step (b), determining the number of a plurality of ultrasonic pixel groups in the ultrasonic pixel array; step (c), generate the first sound wave; step (d), transmit the first sound wave to obtain a plurality of second sound waves; step (e), receive the second sound waves, wherein the ultrasonic pixel received the second sound wave is located at the middle position or adjacent to the middle position of the ultrasonic pixel group; step (f), calculating the second sound waves to generate a pixel signal; step (g), repeating steps (c) to (f); and in step (h), determine an image based on pixel signals.

Abstract: A fingerprint sensing apparatus is provided. A driving circuit drives a capacitive micromachined ultrasonic transducer (CMUT) array to emit a planar ultrasonic wave to a finger during a transmission period to generate reflected ultrasonic signals. CMUTs receive the reflected ultrasonic signals during a receiving period to generate sensing current signals. A sensing circuit senses the sensing current signals output by the CMUTs to generate fingerprint sensing signals.

Abstract: An ultrasonic fingerprint sensor and an operation method thereof are provided. The ultrasonic fingerprint sensor is adapted to be disposed under a panel of a terminal device. The ultrasonic fingerprint sensor includes an ultrasonic fingerprint sensing array and a controller. The ultrasonic fingerprint sensing array transmits a test ultrasonic signal toward the panel. The controller is coupled to the ultrasonic fingerprint sensing array. The controller determines whether a protective layer is attached to a top of the panel based on a number of echo signals corresponding to the test ultrasonic signal.

Abstract: An ultrasonic fingerprint sensing architecture is provided. The ultrasonic fingerprint sensing architecture includes a substrate, a plurality of ultrasonic transceivers, and a waveguide layer. The plurality of ultrasonic transceivers are disposed on the substrate. The waveguide layer is formed on the substrate. The waveguide layer includes a plurality of waveguides. The inside of the plurality of waveguides is filled with a first material and the outside of the plurality of waveguides is filled with a second material. An acoustic impedance of the first material is greater than an acoustic impedance of the second material. The plurality of waveguides are configured to align with the corresponded ultrasonic transceivers respectively in an acoustic wave transmission direction.

Abstract: An ultrasonic fingerprint sensor and an operation method thereof are provided. The ultrasonic fingerprint sensor is adapted to be disposed under a panel of a terminal device. The ultrasonic fingerprint sensor includes an ultrasonic fingerprint sensing array and a controller. The ultrasonic fingerprint sensing array transmits a test ultrasonic signal toward the panel. The controller is coupled to the ultrasonic fingerprint sensing array. The controller determines whether a protective layer is attached to a top of the panel based on a number of echo signals corresponding to the test ultrasonic signal.

Abstract: An ultrasonic transducer detector having a high operating frequency is provided. The ultrasonic transducer detector comprises a substrate and an ultrasonic transducer array. The substrate has a plurality of openings, and the ultrasonic transducer array is disposed on the substrate. The ultrasonic transducer array has a plurality of resonance units, and the thickness of each resonance unit is equivalent to ½ wavelength of the operating frequency of the ultrasonic transducer. Each resonance unit comprises an oscillating element and a piezoelectric element. The oscillating element has a first surface adjacent to the substrate, and the piezoelectric element is disposed on the first surface and located in the corresponding opening.

Abstract: According to an embodiment of the disclosure, an acoustics transducer is provided, which includes a support substrate having an upper surface and a lower surface, the upper surface including a first portion and a second portion surrounding the first portion, a recess extending from the upper surface towards the lower surface, the recess is between the first portion and the second portion of the upper surface, a vibratable membrane disposed directly on the recess, the vibratable membrane including a fixed portion fixed on the support substrate and a suspended portion, and a back plate disposed on the support substrate and opposite to the vibratable membrane. The suspended portion has an edge extending substantially along with an edge of an opening of the recess. The suspended portion is separated from the first portion and the second portion of the upper surface by an inner interval and an outer interval, respectively.

Abstract: An ultrasonic transducer detector having a high operating frequency is provided. The ultrasonic transducer detector comprises a substrate and an ultrasonic transducer array. The substrate has a plurality of openings, and the ultrasonic transducer array is disposed on the substrate. The ultrasonic transducer array has a plurality of resonance units, and the thickness of each resonance unit is equivalent to ½ wavelength of the operating frequency of the ultrasonic transducer. Each resonance unit comprises an oscillating element and a piezoelectric element. The oscillating element has a first surface adjacent to the substrate, and the piezoelectric element is disposed on the first surface and located in the corresponding opening.

Abstract: According to an embodiment of the disclosure, an acoustics transducer is provided, which includes a support substrate having an upper surface and a lower surface, the upper surface including a first portion and a second portion surrounding the first portion, a recess extending from the upper surface towards the lower surface, the recess is between the first portion and the second portion of the upper surface, a vibratable membrane disposed directly on the recess, the vibratable membrane including a fixed portion fixed on the support substrate and a suspended portion, and a back plate disposed on the support substrate and opposite to the vibratable membrane. The suspended portion has an edge extending substantially along with an edge of an opening of the recess. The suspended portion is separated from the first portion and the second portion of the upper surface by an inner interval and an outer interval, respectively.