Patents by Inventor Di Lan
Di Lan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240017524Abstract: A wafer has a layer containing silicon, a layer of polycrystalline diamond deposited on the silicon-containing layer, and a bow-compensation layer on the other side of the silicon-containing layer for reducing wafer-bow. A method of making a bonded structure includes an activation process for creating dangling bonds on the surface of one substrate, followed by contact-bonding the surface to a second substrate at low temperature. A bonded structure may include two substrates contact bonded to each other, one substrate including a layer containing silicon, a layer of polycrystalline diamond, a bow-compensation layer for reducing wafer-bow of the first substrate, and the other substrate including gallium nitride, silicon carbide, lithium niobate, lithium tantalate, gallium arsenide, indium phosphide, or another suitable material other than diamond.Type: ApplicationFiled: July 11, 2023Publication date: January 18, 2024Inventors: Wen-Qing XU, Di LAN, Christopher KOEPPEN
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Patent number: 11843364Abstract: An acoustic resonator includes a piezoelectric stack including a piezoelectric layer having a top surface and a bottom surface, a top electrode layer disposed above the top surface, and a bottom electrode layer disposed below the bottom surface. A number of acoustic wave reflectors are disposed on a side of the bottom electrode layer opposite the piezoelectric layer. Each acoustic wave reflector includes a high acoustic impedance layer and may include a low acoustic impedance layer. The acoustic resonator may include a tether that extends laterally to a stacking direction of the layers of the piezoelectric stack. A supporting structure may be coupled to the tether opposite the acoustic resonator for anchoring the acoustic resonator. A mirror, one or more phononic crystals, or both may be positioned on proximate the tether opposite the acoustic resonator to avoid resonant waves from exiting the acoustic resonator in use.Type: GrantFiled: November 26, 2021Date of Patent: December 12, 2023Assignees: II-VI DELAWARE, INC., UNIVERSITY OF SOUTH FLORIDAInventors: Wen-Qing Xu, Di Lan, Jing Wang, Weiqi Li, Xu Han, Chao Liu, Elgin Eissler, Giovanni Barbarossa
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Publication number: 20230358101Abstract: Provided herein is an electric powered digging apparatus comprising: a powerhead, the power head comprises a motor and a gearbox; a handle frame, the powerhead is mounted onto the handle frame; and a drill bit, the drill bit is driven by the motor to rotate around a longitudinal axis, the electric power digging apparatus further comprises: a first safety mechanism, wherein the first safety mechanism reduces torque output to the drill bit when the powerhead spins around the longitudinal axis for an angle larger than a first threshold, and a second safety mechanism, wherein the second safety mechanism reduces torque output to the drill bit when the powerhead spins around the longitudinal drive axis at an angular speed larger than a second threshold FIG.Type: ApplicationFiled: October 15, 2020Publication date: November 9, 2023Inventors: Koon For Chung, Hui Jian Chen, Xiao Di Lan, Yan Jia Wang, Jonathan Robert Feldkamp, Shuai Shao, Grzegorz Kondro, Richard Michael Mcentyre, Gregory Scott Torrisi, John Eugene McCallum
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Patent number: 11807917Abstract: An aluminum alloy wire, more specifically an aluminum-scandium wire, is adapted for an additive processing operation. A spool of material, containing an aluminum alloy wire, and a method of performing an additive processing operation, using an aluminum alloy wire, are also disclosed.Type: GrantFiled: October 23, 2020Date of Patent: November 7, 2023Assignee: II-VI DELAWARE, INCInventors: Wen-Qing Xu, Shailesh Patkar, Xiaoming Li, Di Lan, Stephen P. Rummel
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Patent number: 11750169Abstract: A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. The piezoelectric layer is a single crystal of LiNbO3 cut at an angle of 130°±30°. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.Type: GrantFiled: May 2, 2022Date of Patent: September 5, 2023Assignee: II-VI DELAWARE, INC.Inventors: Wen-Qing Xu, Di Lan, Christopher S. Koeppen
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Patent number: 11738539Abstract: A wafer has a layer containing silicon, a layer of polycrystalline diamond deposited on the silicon-containing layer, and a bow-compensation layer on the other side of the silicon-containing layer for reducing wafer-bow. A method of making a bonded structure includes an activation process for creating dangling bonds on the surface of one substrate, followed by contact-bonding the surface to a second substrate at low temperature. A bonded structure may include two substrates contact bonded to each other, one substrate including a layer containing silicon, a layer of polycrystalline diamond, a bow-compensation layer for reducing wafer-bow of the first substrate, and the other substrate including gallium nitride, silicon carbide, lithium niobate, lithium tantalate, gallium arsenide, indium phosphide, or another suitable material other than diamond.Type: GrantFiled: April 23, 2021Date of Patent: August 29, 2023Assignee: II-VI DELAWARE, INCInventors: Wen-Qing Xu, Di Lan, Christopher Koeppen
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Publication number: 20230268903Abstract: A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.Type: ApplicationFiled: April 10, 2023Publication date: August 24, 2023Inventors: Di LAN, Wen-Qing XU, Giovanni BARBAROSSA
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Publication number: 20230246626Abstract: A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. The piezoelectric layer is a single crystal of LiNbO3 cut at an angle of 130°±30°. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.Type: ApplicationFiled: April 10, 2023Publication date: August 3, 2023Inventors: Wen-Qing XU, Di LAN, Christopher S. KOEPPEN
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Patent number: 11652465Abstract: A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.Type: GrantFiled: August 9, 2021Date of Patent: May 16, 2023Assignee: II-VI DELAWARE, INC.Inventors: Di Lan, Wen-Qing Xu, Giovanni Barbarossa
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Publication number: 20220263489Abstract: A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. The piezoelectric layer is a single crystal of LiNbO3 cut at an angle of 130°±30°. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.Type: ApplicationFiled: May 2, 2022Publication date: August 18, 2022Inventors: Wen-Qing XU, Di Lan, Christopher S. Koeppen
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Publication number: 20220193691Abstract: The present invention discloses a shredding device. The shredding device according to one or more embodiments of the present invention comprises: a shredding body for shredding materials; a frame for supporting the shredding body; and a power supply device that provides electric power to the shredding body. The shredding body comprises a housing, and the housing is provided with a power supply chamber for accommodating at least part of the power supply device. The shredding device according to the present invention features a compact structure, and is easy and safe to operate.Type: ApplicationFiled: December 20, 2021Publication date: June 23, 2022Inventors: Wai Chung Lee, Koon For Chung, Kun Hao Wu, Xiao Di Lan, Yan Jia Wang
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Publication number: 20220193692Abstract: The present invention discloses a shredding mechanism, a shredding device and a control system and method thereof. The shredding mechanism comprises a shredding component and an adjusting component, wherein the shredding component is used to shred materials, the adjusting component and the shredding component define an operation space for shredding operation, and the adjusting component and the shredding component are configured to be able to move relative to each other so as to change the size of the operation space. The present invention also discloses a shredding device and a control system and method thereof. The shredding mechanism and device according to the present invention feature improved safety, convenience and service life.Type: ApplicationFiled: December 20, 2021Publication date: June 23, 2022Inventors: Wai Chung Lee, Koon For Chung, Kun Hao Wu, Xiao Di Lan
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Patent number: 11362640Abstract: A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. The piezoelectric layer is a single crystal of LiNbO3 cut at an angle of 130°±30°. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.Type: GrantFiled: May 14, 2020Date of Patent: June 14, 2022Assignee: II-VI DELAWARE, INC.Inventors: Wen-Qing Xu, Di Lan, Christopher S. Koeppen
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Publication number: 20220085790Abstract: An acoustic resonator includes a piezoelectric stack including a piezoelectric layer having a top surface and a bottom surface, a top electrode layer disposed above the top surface, and a bottom electrode layer disposed below the bottom surface. A number of acoustic wave reflectors are disposed on a side of the bottom electrode layer opposite the piezoelectric layer. Each acoustic wave reflector includes a high acoustic impedance layer and may include a low acoustic impedance layer. The acoustic resonator may include a tether that extends laterally to a stacking direction of the layers of the piezoelectric stack. A supporting structure may be coupled to the tether opposite the acoustic resonator for anchoring the acoustic resonator. A mirror, one or more phononic crystals, or both may be positioned on proximate the tether opposite the acoustic resonator to avoid resonant waves from exiting the acoustic resonator in use.Type: ApplicationFiled: November 26, 2021Publication date: March 17, 2022Inventors: WEN-QING XU, DI LAN, JING WANG, WEIQI LI, XU HAN, CHAO LIU, ELGIN EISSLER, GIOVANNI BARBAROSSA
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Publication number: 20220029602Abstract: A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.Type: ApplicationFiled: August 9, 2021Publication date: January 27, 2022Inventors: Di Lan, Wen-Qing Xu, Giovanni Barbarossa
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Patent number: 11218132Abstract: An acoustic resonator includes a piezoelectric stack including a piezoelectric layer having a top surface and a bottom surface, a top electrode layer disposed above the top surface, and a bottom electrode layer disposed below the bottom surface. A number of acoustic wave reflectors are disposed on a side of the bottom electrode layer opposite the piezoelectric layer. Each acoustic wave reflector includes a high acoustic impedance layer and may include a low acoustic impedance layer. The acoustic resonator may include a tether that extends laterally to a stacking direction of the layers of the piezoelectric stack. A supporting structure may be coupled to the tether opposite the acoustic resonator for anchoring the acoustic resonator. A mirror, one or more phononic crystals, or both may be positioned on proximate the tether opposite the acoustic resonator to avoid resonant waves from exiting the acoustic resonator in use.Type: GrantFiled: December 4, 2018Date of Patent: January 4, 2022Assignees: II-VI DELAWARE, INC., UNIVERSITY OF SOUTH FLORIDAInventors: Wen-Qing Xu, Di Lan, Jing Wang, Weiqi Li, Xu Han, Chao Liu, Elgin Eissler, Giovanni Barbarossa
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Publication number: 20210283881Abstract: A wafer has a layer containing silicon, a layer of polycrystalline diamond deposited on the silicon-containing layer, and a bow-compensation layer on the other side of the silicon-containing layer for reducing wafer-bow. A method of making a bonded structure includes an activation process for creating dangling bonds on the surface of one substrate, followed by contact-bonding the surface to a second substrate at low temperature. A bonded structure may include two substrates contact bonded to each other, one substrate including a layer containing silicon, a layer of polycrystalline diamond, a bow-compensation layer for reducing wafer-bow of the first substrate, and the other substrate including gallium nitride, silicon carbide, lithium niobate, lithium tantalate, gallium arsenide, indium phosphide, or another suitable material other than diamond.Type: ApplicationFiled: April 23, 2021Publication date: September 16, 2021Inventors: Wen-Qing Xu, Di Lan, Christopher Koeppen
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Patent number: 11121696Abstract: A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.Type: GrantFiled: July 17, 2018Date of Patent: September 14, 2021Assignee: II-VI DELAWARE, INC.Inventors: Di Lan, Wen-Qing Xu, Giovanni Barbarossa
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Publication number: 20210123120Abstract: An aluminum alloy wire, more specifically an aluminum-scandium wire, is adapted for an additive processing operation. A spool of material, containing an aluminum alloy wire, and a method of performing an additive processing operation, using an aluminum alloy wire, are also disclosed.Type: ApplicationFiled: October 23, 2020Publication date: April 29, 2021Inventors: Wen-Qing XU, Shailesh PATKAR, Xiaoming LI, Di LAN, Stephen P. RUMMEL
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Publication number: 20200287514Abstract: A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. The piezoelectric layer is a single crystal of LiNbO3 cut at an angle of 130°±30°. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.Type: ApplicationFiled: May 14, 2020Publication date: September 10, 2020Inventors: Wen-Qing Xu, Di Lan, Christopher S. Koeppen