Abstract: Examples described herein relate to an optical device. The optical device includes a first microring resonator (MRR) laser having a first resonant frequency and a first free spectral range (FSR). The first FSR is greater than a channel spacing of the optical device. Further, the optical device includes a first frequency-dependent filter formed along a portion of the first MRR laser via a common bus waveguide to attenuate one or more frequencies different from the first resonant frequency. A length of the common bus waveguide is chosen to achieve a second FSR of the common bus waveguide to be substantially equal to the channel spacing to enable a single-mode operation for the optical device. Moreover, the optical device includes a first reflector formed at a first end of the common bus waveguide to enhance a unidirectionality of optical signal within the first MRR laser.

Abstract: A device includes a voltage regulator circuit configured to pull up a voltage at an output terminal to equal to half of a supply voltage; multiple first transistors coupled between the output terminal and a voltage terminal providing the supply voltage; and a control circuit configured to pull down gate voltages of the first transistors from the supply voltage to a voltage level between the supply voltage and a ground voltage at a first time. The first transistors are configured to pull up the voltage at the output terminal to the supply voltage at a second time.

Abstract: Examples described herein relate to an optical device with an integrated light-emitting structure to generate light and a waveguide integrated capacitor to monitor light. The light-emitting structure may emit light upon the application of electricity to the optical device. The waveguide integrated capacitor may be formed under the light-emitting structure to monitor the light emitted by the light-emitting structure. The waveguide integrated capacitor includes a waveguide region carrying at least a portion of the light. The waveguide region includes one or more photon absorption sites causing the generation of free charge carriers relative to an intensity of the light confined in the waveguide region resulting in a change in the conductance of the waveguide region.

Abstract: Implementations disclosed herein provide semiconductor resonator based optical multiplexers that achieve enhanced bandwidth range of light emitted therefrom. The present disclosure integrates silicon devices into resonator structures, such as micro-ring resonators, that couples a side mode with a lasing mode and resonantly amplifies coupled light to output light having an enhanced bandwidth with respect to the lasing mode. In some examples, the optical multiplexers disclosed herein include a bus waveguide; a first resonator structure optically coupled to the bus waveguide and comprising an optical amplification mechanism that generates light and a single mode filter to force the generated light into single-mode operation; and a second resonator structure optically coupled to the first resonator structure and comprising a phase-tuning mechanism. The phase-tuning mechanism can be controlled to detune phase of light in the second resonator relative to the light in the first resonator.

Abstract: Examples described herein relate to a ring resonator. The ring resonator may include an annular waveguide having a waveguide base and a waveguide core narrower than the waveguide base. Further, the ring resonator may include an outer contact region comprising a first-type doping and disposed annularly and at least partially surrounding an outer annular surface of the waveguide base. Furthermore, the ring resonator may include an inner contact region comprising a second-type doping and disposed annularly contacting an inner annular surface of the waveguide base. Moreover, the ring resonator may include an annular detector region disposed annularly at a distance from and covering at least a portion of a surface of the waveguide core and contacting the outer contact region.

Abstract: Techniques and systems for a semiconductor laser, namely a grating-coupled surface-emitting (GCSE) comb laser, having thermal management for facilitating dissipation of heat, integrated thereon. The thermal management is structured in manner that prevents deformation or damage to the GCSE laser chips included in the semiconductor laser implementation. The disclosed thermal management elements integrated in the laser can include: heat sinks; support bars; solder joints; thermal interface material (TIM); silicon vias (TSV); and terminal conductive sheets. Support bars, for example, having the GCSE laser chip positioned between the bars and having a height that is higher than a thickness of the GCSE laser chip. Accordingly, the heat sink can be placed on top of the support bars such that heat is dissipated from the GCSE laser chip, and the heat sink is separated from directed contact with the GCSE laser chip due to the height of the support bars.

Abstract: Implementations disclosed herein provide for improving phase tuning efficiency of optical devices, such as a hybrid metal-on-semiconductor capacitor (MOSCAP) III-V/Si micro-ring laser. The present disclosure integrates silicon devices into a waveguide structural of the optical devices disclosed herein, for example, a waveguide resistor heater, a waveguide PIN diode, and waveguide PN diode. In some examples, the optical devices is a MOSCAP formed by a dielectric layer between two semiconductor layers, which provides for small phase tuning via plasma dispersion and/or carrier dispersion effect will occur depending on bias polarity. The plasma dispersion and/or carrier dispersion effect is enhanced according to implementations disclosed herein by heat, carrier injection, and/or additional plasma dispersion based on the silicon devices disclosed integrated into the waveguide.

Abstract: Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.

Abstract: Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.

Abstract: Examples described herein relate to an optical device with an integrated light-emitting structure to generate light and a waveguide integrated capacitor to monitor light. The light-emitting structure may emit light upon the application of electricity to the optical device. The waveguide integrated capacitor may be formed under the light-emitting structure to monitor the light emitted by the light-emitting structure. The waveguide integrated capacitor includes a waveguide region carrying at least a portion of the light. The waveguide region includes one or more photon absorption sites causing the generation of free charge carriers relative to an intensity of the light confined in the waveguide region resulting in a change in the conductance of the waveguide region.

Abstract: Systems and methods are provided for receiving an optical signal from an optical fiber, including: coupling via an optical coupler the optical signal from an optical fiber into first and second waveguides, wherein the optical signal comprises TE and TM polarized optical signals and the optical coupler couples the TE polarized optical signal into the first waveguide and the TM polarized optical signal into the second waveguide; equalizing the TE and TM polarized optical signals from the coupler to equalize optical power levels of the TE and TM polarized optical signals; optically combining the equalized TE and TM polarized optical signals; and transmitting the combined optical signal to a photodetector.

Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p? Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p? Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p? Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p? Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/°C.

Abstract: Examples described herein relate to an optical coupler. The optical coupler may include a first optical waveguide base layer, a second optical waveguide base layer, an insulating layer disposed over at least a portion of both the first optical waveguide base layer and the second optical waveguide base layer, and a semiconductor material layer disposed over the insulating layer. Overlapping portions of the first optical waveguide base layer, the insulating layer, and the semiconductor material layer form a first optical waveguide, and overlapping portions of the second optical waveguide base layer, the insulating layer, and the semiconductor material layer form a second optical waveguide. Moreover, the optical coupler may include a plurality of metal contacts to receive one or more first biasing voltages to operate one of the first optical waveguide base layer and the second optical waveguide base layer in an accumulation mode.

Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p? Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p? Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p? Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p? Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/° C.

Abstract: Narrow-optical linewidth laser generation devices and methods for generating a narrow-optical linewidth laser beam are provided. One narrow-optical linewidth laser generation devie includes a single-wavelength mirror or multiwavelength mirror (for comb lasers) formed from one or more optical ring resonators coupled with an optical splitter. The optical splitter may in turn be coupled with a quantum dot optical amplifier (QDOA), itself coupled with a phase-tuner. The phase tuner may be further coupled with a broadband mirror. The narrow-optical linewidth laser beam is generated by using a long laser cavity and additionally by using an integrated optical feedback.

Abstract: Examples described herein relate to a ring resonator. The ring resonator may include an annular waveguide having a waveguide base and a waveguide core narrower than the waveguide base. Further, the ring resonator may include an outer contact region comprising a first-type doping and disposed annularly and at least partially surrounding an outer annular surface of the waveguide base. Furthermore, the ring resonator may include an inner contact region comprising a second-type doping and disposed annularly contacting an inner annular surface of the waveguide base. Moreover, the ring resonator may include an annular detector region disposed annularly at a distance from and covering at least a portion of a surface of the waveguide core and contacting the outer contact region.

Abstract: Examples disclosed herein relate to quantum-dot (QD) photonics. In accordance with some of the examples disclosed herein, a QD semiconductor optical amplifier (SOA) may include a silicon substrate and a QD layer above the silicon substrate. The QD layer may include an active gain region to amplify a lasing mode received from an optical signal generator. The QD layer may have a gain recovery time such that the active gain region amplifies the received lasing mode without pattern effects. A waveguide may be included in an upper silicon layer of the silicon substrate. The waveguide may include a mode converter to facilitate optical coupling of the received lasing mode between the QD layer and the waveguide.

Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source and a second optical source coupled to the first optical source and injection seeded by the first optical source. The optical transmitter further includes an output coupler, the second optical source coupled to the optical coupler via an output waveguide and configured to emit light having multiple different wavelengths through the output waveguide. In some implementations, the second optical source is self-injection seeded.

Abstract: Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region.

Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source coupled to an input waveguide and configured to emit light having different wavelengths through the input waveguide. The optical transmitter includes a Mach-Zehnder interferometer that includes a first arm and a second arm. The MZI further includes a first optical coupler configured to couple the emitted light from the input waveguide to the first and second arms and an array of two or more second optical sources coupled to the first arm. Each of the two or more second optical sources are configured to be injection locked to a different respective wavelength of the emitted light transmitted from the first optical source. The MZI further includes a second optical coupler configured to combine the emitted light from the first and second arms after propagating therethrough.