Patents by Inventor Di Liang

Di Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11502215
    Abstract: Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region.
    Type: Grant
    Filed: February 23, 2021
    Date of Patent: November 15, 2022
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Yuan Yuan, Di Liang, Xiaoge Zeng, Zhihong Huang
  • Patent number: 11487181
    Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source coupled to an input waveguide and configured to emit light having different wavelengths through the input waveguide. The optical transmitter includes a Mach-Zehnder interferometer that includes a first arm and a second arm. The MZI further includes a first optical coupler configured to couple the emitted light from the input waveguide to the first and second arms and an array of two or more second optical sources coupled to the first arm. Each of the two or more second optical sources are configured to be injection locked to a different respective wavelength of the emitted light transmitted from the first optical source. The MZI further includes a second optical coupler configured to combine the emitted light from the first and second arms after propagating therethrough.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: November 1, 2022
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Sudharsanan Srinivasan, Di Liang, Geza Kurczveil, Raymond G. Beausoleil
  • Patent number: 11442235
    Abstract: Examples described herein relate to an optical system. In some examples, the optical system may include a light-conducting medium and a first optical device to transmit an optical signal over the light-conducting medium. Further, the optical system may include a second optical device coupled to the light-conducting medium to receive an optical signal transmitted by the first optical device. In some examples, at least one of the first optical device, the light-conducting medium, and the second optical device may include an in-situ capacitive structure to detect light intensity. Moreover, the optical system may include a monitoring circuit electrically coupled to the in-situ capacitive structure to generate an electrical signal indicative of the light intensity detected by the in-situ capacitive structure.
    Type: Grant
    Filed: July 29, 2021
    Date of Patent: September 13, 2022
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Di Liang, Sudharsanan Srinivasan
  • Publication number: 20220271186
    Abstract: Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region.
    Type: Application
    Filed: February 23, 2021
    Publication date: August 25, 2022
    Inventors: Yuan Yuan, Di Liang, Xiaoge Zeng, Zhihong Huang
  • Patent number: 11422027
    Abstract: An apparatus includes a photodetector and a memristor coupled to the photodetector. The photodetector is configured to receive and convert optical signals to electrical signals to program the memristor to an on or off state. The apparatus further includes a ring resonator coupled to the memristor and configured to modulate light based on the on or off state of the memristor.
    Type: Grant
    Filed: February 16, 2021
    Date of Patent: August 23, 2022
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Yuan Yuan, Thomas Van Vaerenbergh, Bassem Tossoun, Di Liang
  • Publication number: 20220260416
    Abstract: An apparatus includes a photodetector and a memristor coupled to the photodetector. The photodetector is configured to receive and convert optical signals to electrical signals to program the memristor to an on or off state. The apparatus further includes a ring resonator coupled to the memristor and configured to modulate light based on the on or off state of the memristor.
    Type: Application
    Filed: February 16, 2021
    Publication date: August 18, 2022
    Inventors: YUAN YUAN, THOMAS VAN VAERENBERGH, BASSEM TOSSOUN, DI LIANG
  • Publication number: 20220251017
    Abstract: Provided are a crystal form I of a curcumin derivative (C66), a preparation method therefor and an application thereof. An X-ray powder diffraction pattern of the crystal form I contains following characteristic peaks for 2? reflection angle determination: 8.4±0.2°, 11.5±0.2°, 13.1±0.1°, 16.6±0.2°, 18.8±0.1°, and 21.2±0.1°. No sharp diffraction peak exists at 33.5±0.2° and 38.1±0.2°.
    Type: Application
    Filed: April 26, 2022
    Publication date: August 11, 2022
    Inventors: Guang LIANG, Wenqi WU, Jianchang QIAN, Di WU, Yi WANG
  • Publication number: 20220216787
    Abstract: A device includes a voltage regulator circuit, a power switch circuit, and a control circuit. The voltage regulator circuit generates an output voltage at an output terminal. The power switch circuit is coupled to the voltage regulator circuit. The control circuit receives a first control signal and generates a second signal that includes a first portion gradually declining between a first time and a second time later than the first time. When the voltage regulator circuit is turned off and a logic state of the first control signal changes at the first time, the power switch circuit is turned on at the second time, in response to the second control signal, to adjust the output voltage.
    Type: Application
    Filed: March 5, 2021
    Publication date: July 7, 2022
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC CHINA COMPANY LIMITED
    Inventors: Yong-Liang JIN, Ya-Qi MA, Wei Li, Di FAN
  • Patent number: 11355899
    Abstract: An optical device includes a light-emitting device integrated with a memory device. The memory device include a first electrode and a second electrode, and the light-emitting device includes a third electrode and the second electrode. In such configuration, a first voltage between the second electrode and the third electrode causes the light-emitting device to emit light of a first wavelength, and a second voltage between the first electrode and the second electrode while the memory device is at OFF state causes the light-emitting device to emit light of a second wavelength shorter than the first wavelength or while the memory device is at ON state causes the light-emitting device to emit light of a third wavelength longer than the first wavelength.
    Type: Grant
    Filed: August 27, 2020
    Date of Patent: June 7, 2022
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Bassem Tossoun, Di Liang, John Paul Strachan
  • Patent number: 11342472
    Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p? Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p? Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p? Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p? Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/° C.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: May 24, 2022
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Zhihong Huang, Di Liang, Yuan Yuan
  • Publication number: 20220123159
    Abstract: Integrated optical filter and photodetectors and methods of fabrication thereof are described herein according to the present disclosure. An example of an integrated optical filter and photodetector described herein includes a substrate, an insulator layer on the substrate, and a semiconductor layer on the insulator layer. An optical filter having a resonant cavity is formed in or on the semiconductor layer. The integrated optical filter and photodetector further includes two first metal fingers and a second metal finger interdigitated between the two first metal fingers on the semiconductor layer forming Schottky barriers. The first metal fingers are constructed from a different metal relative to the second metal finger.
    Type: Application
    Filed: October 16, 2020
    Publication date: April 21, 2022
    Inventors: Yuan Yuan, Zhihong Huang, Di Liang, Xiaoge Zeng
  • Publication number: 20220091446
    Abstract: Examples described herein relate to an optical coupler. The optical coupler may include a first optical waveguide base layer, a second optical waveguide base layer, an insulating layer disposed over at least a portion of both the first optical waveguide base layer and the second optical waveguide base layer, and a semiconductor material layer disposed over the insulating layer. Overlapping portions of the first optical waveguide base layer, the insulating layer, and the semiconductor material layer form a first optical waveguide, and overlapping portions of the second optical waveguide base layer, the insulating layer, and the semiconductor material layer form a second optical waveguide. Moreover, the optical coupler may include a plurality of metal contacts to receive one or more first biasing voltages to operate one of the first optical waveguide base layer and the second optical waveguide base layer in an accumulation mode.
    Type: Application
    Filed: September 24, 2020
    Publication date: March 24, 2022
    Inventors: Stanley Cheung, Di Liang, Sudharsanan Srinivasan
  • Publication number: 20220077656
    Abstract: Techniques and systems for a semiconductor laser, namely a grating-coupled surface-emitting (GCSE) comb laser, having thermal management for facilitating dissipation of heat, integrated thereon. The thermal management is structured in manner that prevents deformation or damage to the GCSE laser chips included in the semiconductor laser implementation. The disclosed thermal management elements integrated in the laser can include: heat sinks; support bars; solder joints; thermal interface material (TIM); silicon vias (TSV); and terminal conductive sheets. Support bars, for example, having the GCSE laser chip positioned between the bars and having a height that is higher than a thickness of the GCSE laser chip. Accordingly, the heat sink can be placed on top of the support bars such that heat is dissipated from the GCSE laser chip, and the heat sink is separated from directed contact with the GCSE laser chip due to the height of the support bars.
    Type: Application
    Filed: September 8, 2020
    Publication date: March 10, 2022
    Inventors: DI LIANG, CHIH C. SHIH, KEVIN B. LEIGH, GEZA KURCZVEIL, MARCO FIORENTINO
  • Publication number: 20220069541
    Abstract: An optical device includes a light-emitting device integrated with a memory device. The memory device include a first electrode and a second electrode, and the light-emitting device includes a third electrode and the second electrode. In such configuration, a first voltage between the second electrode and the third electrode causes the light-emitting device to emit light of a first wavelength, and a second voltage between the first electrode and the second electrode while the memory device is at OFF state causes the light-emitting device to emit light of a second wavelength shorter than the first wavelength or while the memory device is at ON state causes the light-emitting device to emit light of a third wavelength longer than the first wavelength.
    Type: Application
    Filed: August 27, 2020
    Publication date: March 3, 2022
    Inventors: Bassem Tossoun, Di Liang, John Paul Strachan
  • Publication number: 20220021459
    Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source and a second optical source coupled to the first optical source and injection seeded by the first optical source. The optical transmitter further includes an output coupler, the second optical source coupled to the optical coupler via an output waveguide and configured to emit light having multiple different wavelengths through the output waveguide. In some implementations, the second optical source is self-injection seeded.
    Type: Application
    Filed: July 16, 2020
    Publication date: January 20, 2022
    Inventors: Geza Kurczveil, Di Liang, Sudharsanan Srinivasan, Raymond G. Beausoleil
  • Patent number: 11227967
    Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The absorbing region may also have a different composition from the amplifying region, allowing further independent optimization of the two functional regions. An insulating layer blocks leakage paths, redirecting photocurrent toward the region(s) of highest avalanche gain. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.
    Type: Grant
    Filed: November 12, 2020
    Date of Patent: January 18, 2022
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Xiaoge Zeng, Zhihong Huang, Di Liang
  • Publication number: 20210405499
    Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source coupled to an input waveguide and configured to emit light having different wavelengths through the input waveguide. The optical transmitter includes a Mach-Zehnder interferometer that includes a first arm and a second arm. The MZI further includes a first optical coupler configured to couple the emitted light from the input waveguide to the first and second arms and an array of two or more second optical sources coupled to the first arm. Each of the two or more second optical sources are configured to be injection locked to a different respective wavelength of the emitted light transmitted from the first optical source. The MZI further includes a second optical coupler configured to combine the emitted light from the first and second arms after propagating therethrough.
    Type: Application
    Filed: June 30, 2020
    Publication date: December 30, 2021
    Inventors: Sudharsanan Srinivasan, Di Liang, Geza Kurczveil, Raymond G. Beausoleil
  • Publication number: 20210391488
    Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p? Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p? Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p? Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p? Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/° C.
    Type: Application
    Filed: June 15, 2020
    Publication date: December 16, 2021
    Inventors: ZHIHONG HUANG, DI LIANG, YUAN YUAN
  • Patent number: 11201449
    Abstract: Processes and apparatuses described herein provide for an efficient cyclical fiber-optic connection between a source component and multiple destination components in a computing environment. A comb laser generates a laser signal that includes laser light of a first frequency that is red-shifted from a carrier frequency. The comb laser concurrently transmits the laser signal to four ring resonators via an optical waveguide. Three of the ring resonators are initially configured for optical resonance at a second frequency that is blue-shifted from the carrier frequency, while one of the ring resonators is initially configured for optical resonance at the first frequency. The laser signal is modulated to communicate data to a first target location associated with the ring resonator that is initially configured for optical resonance at the first frequency.
    Type: Grant
    Filed: July 31, 2019
    Date of Patent: December 14, 2021
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Terrel Morris, Di Liang, Raymond G. Beausoleil, Ashkan Seyedi
  • Publication number: 20210376933
    Abstract: Systems and methods are provided for receiving an optical signal from an optical fiber, including: coupling via an optical coupler the optical signal from an optical fiber into first and second waveguides, wherein the optical signal comprises TE and TM polarized optical signals and the optical coupler couples the TE polarized optical signal into the first waveguide and the TM polarized optical signal into the second waveguide; equalizing the TE and TM polarized optical signals from the coupler to equalize optical power levels of the TE and TM polarized optical signals; optically combining the equalized TE and TM polarized optical signals; and transmitting the combined optical signal to a photodetector.
    Type: Application
    Filed: June 2, 2020
    Publication date: December 2, 2021
    Inventors: Di Liang, Zhihong Huang