Patents by Inventor Diago SAWAKI

Diago SAWAKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photoelectric conversion device and imaging device
    Patent number: 8471246
    Abstract: A photoelectric conversion device is provided, the photoelectric conversion device including: a pair of electrodes; a photoelectric conversion layer arranged between the pair of electrodes and containing an n-type organic semiconductor; and a charge blocking layer arranged between one of the pair of electrodes and the photoelectric conversion layer, the charge blocking layer being formed of a single layer or two or more layers, wherein a difference ?1 between ionization potential Ip of a layer of the charge blocking layer adjacent to the photoelectric conversion layer and electron affinity Ea of the n-type organic semiconductor is at least 1 eV; and the charge blocking layer has a gross thickness of at least 20 nm.
    Type: Grant
    Filed: October 14, 2009
    Date of Patent: June 25, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Hideyuki Suzuki, Tetsuro Mitsui, Diago Sawaki, Mitsumasa Hamano, Masayuki Hayashi
  • PHOTOELECTRIC CONVERSION DEVICE AND IMAGING DEVICE
    Publication number: 20100089452
    Abstract: A photoelectric conversion device is provided, the photoelectric conversion device including: a pair of electrodes; a photoelectric conversion layer arranged between the pair of electrodes and containing an n-type organic semiconductor; and a charge blocking layer arranged between one of the pair of electrodes and the photoelectric conversion layer, the charge blocking layer being formed of a single layer or two or more layers, wherein a difference ?1 between ionization potential Ip of a layer of the charge blocking layer adjacent to the photoelectric conversion layer and electron affinity Ea of the n-type organic semiconductor is at least 1 eV; and the charge blocking layer has a gross thickness of at least 20 nm.
    Type: Application
    Filed: October 14, 2009
    Publication date: April 15, 2010
    Applicant: FUJIFILM CORPORATION
    Inventors: Hideyuki SUZUKI, Tetsuro MITSUI, Diago SAWAKI, Mitsumasa HAMANO, Masayuki HAYASHI