Abstract: The invention provides a semiconductor manufacturing process, which comprises the following steps: using a computer system to define plurality of shots on a wafer range, distributing a plurality of observation points in each shot, finding out parts of incomplete shots from all of the shots, calculating the number of observation points in each incomplete shot, eliminating the incomplete shots with the number less than 3 observation points, counting all observation points in the remaining incomplete shots, and deleting a part of observation points until the total number of observation points meets a preset total number, and uniformly distributing all observation points, and performing an overlay measurement step on the remaining observation points to generate an offset vector map.

Abstract: A method for aligning to a pattern on a wafer is disclosed. The method includes the steps of obtaining a first inline image from a first sample wafer, obtaining a first contour pattern of an alignment mark pattern from the first inline image, using the first contour pattern to generate a first synthetic image in black and white pixels of only two grayscale levels, using the first synthetic image as a reference to recognize the alignment mark pattern on a tested wafer, and aligning to a tested pattern on the tested wafer according to a position of the alignment mark pattern on the tested wafer and a coordinate information.

Abstract: A method for aligning to a pattern on a wafer is disclosed. The method includes the steps of obtaining a first inline image from a first sample wafer, obtaining a first contour pattern of an alignment mark pattern from the first inline image, using the first contour pattern to generate a first synthetic image in black and white pixels, using the first synthetic image as a reference to recognize the alignment mark pattern on a tested wafer, and aligning to a tested pattern on the tested wafer according to a position of the alignment mark pattern on the tested wafer and a coordinate information.

Abstract: A method for aligning to a pattern on a wafer is disclosed. The method includes the steps of obtaining a first inline image from a first sample wafer, obtaining a first contour pattern of an alignment mark pattern from the first inline image, using the first contour pattern to generate a first synthetic image in black and white pixels, using the first synthetic image as a reference to recognize the alignment mark pattern on a tested wafer, and aligning to a tested pattern on the tested wafer according to a position of the alignment mark pattern on the tested wafer and a coordinate information.

Abstract: A semiconductor device includes a substrate. A gate structure is disposed over the substrate in a vertical direction. The gate structure extends in a first horizontal direction. An air spacer is disposed adjacent to a first portion of the gate structure in a second horizontal direction that is different from the first horizontal direction. The air spacer has a vertical boundary in a cross-sectional side view defined by the vertical direction and the first horizontal direction.

Abstract: A liquid low concentration sodium-containing silicate solution as electrolyte for lead-acid storage batteries and its applications, is prepared by mixing a silica gel containing 40˜60 wt % SiO2, the weight units of such a silica gel are 5˜15; add 15-25 weight units water and stir until the concentration of the mixture is 0.65˜0.85 0Be? measured by a Baum densimeter, adjusting the pH value of this mixture to 1-4 using inorganic acid and magnetizing the mixture under 1000-6000 Gauss magnetic field for 5-10 minutes, stir the magnetized mixture until the viscosity of the mixture is less than 0.02 poise and finally obtain a liquid low concentration sodium-containing silicate solution. The electrolyte can be used as electrolyte or activation solution for common or special lead-acid storage batteries.

Abstract: The present invention is related to a liquid low concentration sodium-containing silicate solution as electrolyte for lead-acid storage batteries and its applications. Such an electrolyte is prepared by mixing a silica gel containing 40˜60 wt % SiO2, the weight units of such a silica gel are 5˜15; add 15-25 weight units water and stir until the concentration of the mixture is 0.65˜0.85 0Be? measured by a Baumé densimeter, adjusting the pH value of this mixture to 1-4 using inorganic acid and magnetizing the mixture under 1000-6000 Gauss magnetic field for 5-10 minutes, stir the magnetized mixture until the viscosity of the mixture is less than 0.02 poise and finally obtain a liquid low concentration sodium-containing silicate solution. It can be used as electrolyte or activation solution for common or special lead-acid storage batteries. The lead-acid storage batteries using above electrolyte showed increased specific energy density up to more than 53 W/Kg.

Abstract: A liquid low concentration sodium-containing silicate solution as electrolyte for lead-acid storage batteries and its applications, is prepared by mixing a silica gel containing 40˜60 wt % SiO2, the weight units of such a silica gel are 5˜15; add 15-25 weight units water and stir until the concentration of the mixture is 0.65˜0.85 0Be? measured by a Baum densimeter, adjusting the pH value of this mixture to 1-4 using inorganic acid and magnetizing the mixture under 1000-6000 Gauss magnetic field for 5-10 minutes, stir the magnetized mixture until the viscosity of the mixture is less than 0.02 poise and finally obtain a liquid low concentration sodium-containing silicate solution. The electrolyte can be used as electrolyte or activation solution for common or special lead-acid storage batteries.

Abstract: The present invention is related to a liquid low concentration sodium-containing silicate solution as electrolyte for lead-acid storage batteries and its applications. Such an electrolyte is prepared by mixing a silica gel containing 40˜60 wt % SiO2, the weight units of such a silica gel are 5˜15; add 15-25 weight units water and stir until the concentration of the mixture is 0.65˜0.85 0Be′ measured by a Baumé densimeter, adjusting the pH value of this mixture to 1-4 using inorganic acid and magnetizing the mixture under 1000-6000 Gauss magnetic field for 5-10 minutes, stir the magnetized mixture until the viscosity of the mixture is less than 0.02 poise and finally obtain a liquid low concentration sodium-containing silicate solution. It can be used as electrolyte or activation solution for common or special lead-acid storage batteries. The lead-acid storage batteries using above electrolyte showed increased specific energy density up to more than 53 W/Kg.

Abstract: Present invention is related to a liquid low concentration sodium-containing silicate solution as the activation solution for lead-acid storage batteries and an internal activation method. Such an activation solution is prepared by mixing a silica gel containing 40˜60 wt % SiO2, the weight units of such a silica gel are 5-15, with 15-25 weight units of water. Adjusting the pH value of this mixture to 1-4 using inorganic acid and magnetizing the mixture in 1000-6000 Gauss magnetic field for 5-10 minutes, and finally obtains a liquid low concentration sodium-containing silicate solution with a viscosity less than 0.02 poise. Fill this activation solution into battery tank and use a charger to activate electrochemically. The operating temperature is room temperature and time is 30-50 hours. Using such an activation solution and procedures described above can avoid the releasing of acid smog and serious environmental pollution and healthy hazard for workers.