Abstract: A Ta barrier slurry for Chemical-Mechanical Polishing (CMP) during copper metallization contains an organic additive which suppresses formation of precipitates and copper staining. The organic additive is chosen from a class of compounds which form multiple strong adsorbant bonds to the surface of silica or copper, which provide a high degree of surface coverage onto the reactive species, thereby occupying potential reaction sites, and which are sized to sterically hinder the collisions between two reactant molecules which result in new bond formation. The organic additive-containing slurry cain be utilized throughout the entire polish time. Alternatively, a slurry not containing the organic additive can be utilized for a first portion of the polish, and a slurry containing the organic additive or a polishing solution containing the organic additive can be utilized for a second portion of the polish.

Abstract: A Ta barrier slurry for Chemical-Mechanical Polishing (CMP) during copper metallization contains an organic additive which suppresses formation of precipitates and copper staining. The organic additive is chosen from a class of compounds which form multiple strong adsorbant bonds to the surface of silica or copper, which provide a high degree of surface coverage onto the reactive species, thereby occupying potential reaction sites, and which are sized to sterically hinder the collisions between two reactant molecules which result in new bond formation. The organic additive-containing slurry can be utilized throughout the entire polish time. Alternatively, a slurry not containing the organic additive can be utilized for a first portion of the polish, and a slurry containing the organic additive or a polishing solution containing the organic additive can be utilized for a second portion of the polish.

Abstract: The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by immersing the wafer in a bath containing a chemical agent. Embodiments include removing up to 60 Å of silicon oxide by immersing the wafer in an acidic solution, such as a solution of hydrofluoric acid and water.

Abstract: A Ta barrier slurry for Chemical-Mechanical Polishing (CMP) during copper metallization contains an organic additive which suppresses formation of precipitates and copper staining.

Abstract: Copper or a low resistivity copper alloy is initially deposited to fill relatively narrow openings leaving relatively wider openings unfilled. A copper alloy having improved electromigration resistance with respect to copper is then selectively deposited to fill the relatively wider openings, thereby improving electromigration resistance without increasing narrow line resistance. Embodiments include annealing after filling the relatively narrow openings and before filling the relatively wider openings, thereby reducing void formation in narrow lines.

Abstract: A Ta barrier slurry for Chemical-Mechanical Polishing (CMP) during copper metallization contains an organic additive which suppresses formation of precipitates and copper staining.

Abstract: The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by spraying the wafer with a chemical agent. Embodiments include removing up to 60Å of silicon oxide by spraying the wafer with an acidic solution, such as a solution comprising acetic acid and ammonium fluoride.

Abstract: The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and between the lines after CMP. Embodiments include removing up to 20 Å of silicon oxide by buffing with a solution containing ammonium fluoride, diammonium hydrogen citrate, triammonium citrate and dionized water.

Abstract: The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP with a solution comprising HF and H2O. Embodiments include removing up to 50 Å of silicon oxide by treating the wafer in a spray acid processor with a solution containing HF and deionized water at a water to acid ratio of about 100:1 to about 250:1.

Abstract: The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by double sided scrubbing with a chemical agent. Embodiments include removing portions up to 60 Å of silicon oxide by double sided scrubbing with a solution containing ammonium fluoride, diammonium hydrogen citrate, triammonium citrate, and dionized water, with or without a surfactant.

Abstract: The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by immersion in and/or double sided brush scrubbing with a chemical agent. Embodiments include removing controlled portions up to 50 Å of silicon oxide by immersion in and/or double sided brush scrubbing with a solution containing ammonium fluoride, diammonium hydrogen citrate, triammonium citrate, a surfactant and dionized water.

Abstract: Abrasion of Cu metallization during CMP is reduced and residual slurry particulate removal facilitated by employing a CMP slurry containing a dispersion of soft mineral particles having high solubility in dilute acids. Embodiments include CMP Cu metallization with a slurry containing magnesium oxide particles and removing any residual magnesium oxide particles after CMP with an organic acid, such as citric acid or acetic acid, or a dilute inorganic acid, such as hydrochloric, phosphoric, boric or fluoboric acid.

Abstract: The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP with a solution comprising acetic acid and ammonium fluoride. Embodiments include removing up to 60 .ANG., e.g. about 10 .ANG. to about 30 .ANG., of silicon oxide by immersing the wafer in a solution containing at least about 90 wt. % acetic acid and up to about 10 wt. % ammonium fluoride.

Abstract: A multiple-layer interconnect structure in an integrated circuit, is formed using damascene techniques. A first layer interconnect has a first dielectric layer through which at least one first layer conductor extends. A second layer interconnect is then formed on the first layer interconnect. The second layer interconnect also includes a second layer dielectric through which at least one second layer conductor extends. However, the second layer interconnect is created by first forming a thick second later dielectric layer and then reducing the thickness of the second layer dielectric prior to a patterning step. As a result topographical irregularities that may have carried over to the second layer interconnect from the first layer interconnect are removed by providing a substantially planar surface on the second layer dielectric.

Abstract: Abrasion of Cu metallization during CMP is reduced and residual slurry particulate removal facilitated by employing a CMP slurry containing a dispersion of iron oxide particles having high solubility in dilute acids. Embodiments include CMP Cu metallization with a slurry containing iron oxide particles and removing residual iron oxide particles after CMP with an organic acid, such as oxalic acid or acetic acid, or a dilute inorganic acid, such as hydrochloric, boric or fluoroboric acid.

Abstract: The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP. Embodiments include removing up to 20 .ANG. of silicon oxide by buffing with a solution containing ammonium fluoride, diammonium hydrogen citrate, triammonium citrate, a surfactant and de-ionized water.

Abstract: A method for reducing stress in a TiN layer of a metallization structure, and a silicon wafer portion made by this method. The surface of the dielectric under the TiN is roughened using a water polish with a hard pad, to provide micromounts and valleys on the dielectric surface.

Abstract: Particulate contamination of a semiconductor wafer subjected to chemical-mechanical polishing is reduced by applying a high pressure water spray to the polishing pad during conditioning.

Abstract: A process and solution for cleaning Fe contaminants bound to a metallized semiconductor surface after CMP planarization. The solution comprises a PH buffered solution including hydrofluoric acid and a ligand selected from a group consisting of citrates and EDTA.