Patents by Inventor Diana Ma
Diana Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9180289Abstract: An implantable or insertable medical device can include a silicone substrate and a plasma-enhanced chemical vapor deposition coating on the silicone substrate. The coating may include a silicon-containing compound. A method of forming the coating is also provided.Type: GrantFiled: August 9, 2013Date of Patent: November 10, 2015Assignee: Cardiac Pacemakers, Inc.Inventors: Mary M. Byron, Diana Ma, James P. Rohl, Hood Chatham, Frank De Francesco
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Patent number: 8680126Abstract: Compounds of formula (I) or their pharmaceutically acceptable salts, or their stereoisomers or mixtures of stereoisomers, where: R1 is selected from the group consisting of: phenyl, and phenyl mono-, di-, or tri-substituted by a radical independently selected from the group consisting of F, Cl, Br, I, (C1-C6)-alkyl, COO—(C1-C6)-alkyl, and (C1-C6)-alkoxy; and R2 is a radical selected from the same group as R1, further including a phenyl substituted in 4-position by a radical independently selected from the group consisting of —O(CH2)CONH(CH2)3CH3 and OCH2COOC(CH3)3, a biphenyl-4-yl, thiazol-2-yl, and a thiazol-2-yl mono- or di-substituted by a radical selected from F and phenyl; inhibit cell proliferation of tumor cells independently of p53 protein and may also induce apoptosis in several tumor cells independently of p53 protein, being useful for the treatment of several types of cancer.Type: GrantFiled: August 29, 2011Date of Patent: March 25, 2014Assignees: Universitat de Barcelona, Fundacio Privada Institut d'Inbestigacio Biomedica de Bell Vitge, Fundacio Privada Institute de Recerca Biomedica de Barcelona, Fundacio Privada Parc Cientific de BarcelonaInventors: Joan Gil Santano, Rodolfo Lavilla Grifols, Fernando Albericio Palomera, Alba Pérez Perarnau, Sara Preciado Gallego, Diana Ma González Gironès, Daniel Iglesias Serret, Rosario Ramón Albalate
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Publication number: 20140067028Abstract: An implantable or insertable medical device can include a silicone substrate and a plasma-enhanced chemical vapor deposition coating on the silicone substrate. The coating may include a silicon-containing compound. A method of forming the coating is also provided.Type: ApplicationFiled: August 9, 2013Publication date: March 6, 2014Applicant: Cardiac Pacemakers, Inc.Inventors: Mary M. Byron, Diana Ma, James P. Rohl, Hood Chatham, Frank De Francesco
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Publication number: 20070284668Abstract: A semiconductor device includes a substrate having regions filled with an additive that forms a source/drain for a MOS device, a gate dielectric layer deposited over the substrate, the gate dielectric layer electrically isolates the substrate from subsequently deposited layers, a gate electrode deposited over the gate dielectric layer, an oxide liner formed along laterally opposite sidewalls of the gate electrode, a nitride layer formed along the oxide liner extending above the gate electrode, and wherein the additive and the nitride layer enclose the gate electrode.Type: ApplicationFiled: April 24, 2007Publication date: December 13, 2007Applicant: Applied Materials, Inc., A Delaware corporationInventors: Meihua Shen, Yonah Cho, Mark Kawaguchi, Faran Nouri, Diana Ma
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Publication number: 20070287244Abstract: A method for fabricating a semiconductor device with adjacent PMOS and NMOS devices on a substrate includes forming a PMOS gate electrode with a PMOS hardmask on a semiconductor substrate with a PMOS gate dielectric layer in between, forming an NMOS gate electrode with an NMOS hardmask on a semiconductor substrate with an NMOS gate dielectric layer in between, forming an oxide liner over a portion of the PMOS gate electrode and over a portion of the NMOS gate electrode, forming a lightly doped N-Halo implant, depositing a nitride layer over the oxide liner, depositing photoresist on the semiconductor substrate in a pattern that covers the NMOS device, etching the nitride layer from the PMOS device, wherein the etching nitride layer leaves a portion of the nitride layer on the oxide liner, etching semiconductor substrate to form a Si recess, and depositing SiGe into the Si recesses, wherein the SiGe and the nitride layer enclose the oxide liner.Type: ApplicationFiled: April 24, 2007Publication date: December 13, 2007Applicant: Applied Materials, Inc., A Delaware corporationInventors: Meihua Shen, Yonah Cho, Mark Kawaguchi, Faran Nouri, Diana Ma
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Publication number: 20050106873Abstract: A method and apparatus for processing a semiconductor substrate is disclosed. A plasma reactor has a capacitive electrode driven by a plurality of RF power sources, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to provide an electrode plasma resonance supportive of a broad process window within which the plasma may be sustained.Type: ApplicationFiled: July 12, 2004Publication date: May 19, 2005Inventors: Daniel Hoffman, Diana Ma, Yan Ye, Jang Yang
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Patent number: 6641697Abstract: An erosion resistant member that may be used in the processing of a substrate in a plasma of a processing gas, comprises at least a portion that may be exposed to the plasma of the processing gas and that contains more than about 3% by weight of an oxide of a Group IIIB metal. The portion may also further contain a ceramic compound selected from silicon carbide, silicon nitride, boron carbide, boron nitride, aluminum nitride, aluminum oxide, and mixtures thereof.Type: GrantFiled: October 24, 2001Date of Patent: November 4, 2003Assignee: Applied Materials, IncInventors: Nianci Han, Hong Shih, Jie Yuan, Danny Lu, Diana Ma
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Patent number: 6592707Abstract: A corrosion-resistant protective coating for an apparatus and method of processing a substrate in a chamber containing a plasma of a processing gas. The protective coating or sealant is used to line or coat inside surfaces of a reactor chamber that are exposed to corrosive processing gas that forms the plasma. The protective coating comprises at least one polymer resulting from a monomeric anaerobic chemical mixture having been cured in a vacuum in the absence of oxygen. The protective coating includes a major proportion of at least one methacrylate compound and a minor proportion of an activator compound which initiates the curing process of the monomeric anaerobic mixture in the absence of oxygen or air.Type: GrantFiled: October 22, 2001Date of Patent: July 15, 2003Assignee: Applied Materials Inc.Inventors: Hong Shih, Nianci Han, Jie Yuan, Joe Sommers, Diana Ma, Paul Vollmer, Michael C. Willson
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Patent number: 6466881Abstract: A method for determining the quality of a protective coating or layer on a structure inside of a reactor chamber. The method includes generating a basis, such as a standard scatter band of impedance, as an acceptable standard for the quality of a protective layer on the inside of a reactor chamber. At least one substrate is processed within a reactor chamber containing a protective coating for protecting the inside of the reactor chamber during processing of the substrate. The method further includes determining the quality of the protective coating, such as by measuring protective characteristics of the protective coating. A method for on-line monitoring of a quality of a coating on the inside of a reactor chamber.Type: GrantFiled: April 22, 1999Date of Patent: October 15, 2002Assignee: Applied Materials Inc.Inventors: Hong Shih, Joe Sommers, Diana Ma
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Patent number: 6458516Abstract: A method of patterning a layer of dielectric material having a thickness greater than 1,000 Å, and typically a thickness greater than 5,000 Å. The method is particularly useful for forming a high aspect ratio via or a high aspect ratio contact including self-aligned contact structures, where the aspect ratio is typically greater than 3 and the feature size of the contact is about 0.25 &mgr;m or less. In particular, an organic, polymeric-based masking material is used in a plasma etch process for transferring a desired pattern through an underlying layer of dielectric material. The combination of masking material and plasma source gas must provide the necessary high selectivity toward etching of the underlying layer of dielectric material. The selectivity is preferably greater than 3:1, where the etch rate of the dielectric material is at least 3 times greater than the etch rate of the organic, polymeric-based masking material.Type: GrantFiled: April 18, 2000Date of Patent: October 1, 2002Assignee: Applied Materials Inc.Inventors: Yan Ye, Pavel Ionov, Allen Zhao, Peter Hsieh, Diana Ma, Chun Yan, Jie Yuan
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Publication number: 20020100554Abstract: An erosion resistant member that may be used in the processing of a substrate in a plasma of a processing gas, comprises at least a portion that may be exposed to the plasma of the processing gas and that contains more than about 3% by weight of an oxide of a Group IIIB metal. The portion may also further contain a ceramic compound selected from silicon carbide, silicon nitride, boron carbide, boron nitride, aluminum nitride, aluminum oxide, and mixtures thereof.Type: ApplicationFiled: October 24, 2001Publication date: August 1, 2002Applicant: Applied Materials, Inc.Inventors: Nianci Han, Hong Shih, Jie Yuan, Danny Lu, Diana Ma
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Patent number: 6413389Abstract: A method and assembly for recovering a metal from by-products produced from etching a metal (e.g., platinum, iridium, aluminum, etc.) in a plasma processing chamber. The method includes recovering from the plasma processing chamber a deposit of the by-products containing the metal. The deposit is dissolved in an acid, and the metal is recovered from the acid by inserting a working electrode, a reference electrode, and a counter electrode into the acid and applying a difference in potential between the working and reference electrodes to cause current to flow through the working and counter electrodes and the metal to be removed from the liquid and deposit on the working electrode. The metal is removed from the working electrode to recover the metal.Type: GrantFiled: December 17, 1999Date of Patent: July 2, 2002Assignee: Applied Materials, Inc.Inventors: Hong Shih, Danny Lu, Nianci Han, Li Xu, Diana Ma
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Publication number: 20020066532Abstract: A corrosion-resistant protective coating for an apparatus and method of processing a substrate in a chamber containing a plasma of a processing gas. The protective coating or sealant is used to line or coat inside surfaces of a reactor chamber that are exposed to corrosive processing gas that forms the plasma. The protective coating comprises at least one polymer resulting from a monomeric anaerobic chemical mixture having been cured in a vacuum in the absence of oxygen. The protective coating includes a major proportion of at least one methacrylate compound and a minor proportion of an activator compound which initiates the curing process of the monomeric anaerobic mixture in the absence of oxygen or air.Type: ApplicationFiled: October 22, 2001Publication date: June 6, 2002Inventors: Hong Shih, Nianci Han, Jie Yuan, Joe Sommers, Diana Ma, Paul Vollmer, Michael C. Willson
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Patent number: 6352049Abstract: The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.Type: GrantFiled: July 20, 1998Date of Patent: March 5, 2002Assignee: Applied Materials, Inc.Inventors: Gerald Yin, Arnold Kolandenko, Hong Ching Shan, Peter Loewenhardt, Chii Lee, Yan Ye, Xueyan Qian, Songlin Xu, Arthur Chen, Arthur Sato, Michael Grimbergen, Diana Ma, John Yamartino, Chun Yan, Wade Zawalski
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Patent number: 6352611Abstract: A ceramic composition of matter for a process kit and a dielectric window of a reactor chamber wherein substrates are processed in a plasma of a processing gas. The ceramic composition of matter contains a ceramic compound (e.g. Al2O3) and an oxide of a Group IIIB metal (e.g., Y2O3). A method for processing (e.g. etching) a substrate in a chamber containing a plasma of a processing gas. The method includes passing processing power through a dielectric window which is formed from the ceramic composition of matter.Type: GrantFiled: June 2, 2000Date of Patent: March 5, 2002Assignee: Applied Materials, Inc.Inventors: Nianci Han, Hong Shih, Jie Yuan, Danny Lu, Diana Ma
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Patent number: 6296780Abstract: The present invention is embodied in a method and apparatus for etching an organic anti-reflective coating (OARC) layer and a titanium nitride anti-reflective coating (TiN ARC) layer deposited on a substrate located within a processing chamber, without the need for removing the substrate being processed from the processing chamber in which it is situated and without the need for intervening processing steps, such as chamber cleaning operations. The substrate has a base, an underlying oxide layer above the base, an overlying layer above the underlying layer, a middle conductive layer, a TiN ARC layer, and a top OARC layer spun on top of the TiN ARC.Type: GrantFiled: December 8, 1997Date of Patent: October 2, 2001Assignee: Applied Materials Inc.Inventors: Chun Yan, Yan Ye, Diana Ma
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Patent number: 6270687Abstract: An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure.Type: GrantFiled: April 27, 2000Date of Patent: August 7, 2001Assignee: Applied Materials, Inc.Inventors: Yan Ye, Donald Olgado, Avi Tepman, Diana Ma, Gerald Zheyao Yin, Peter Loewenhardt, Jeng Hwang, Steve S. Y. Mak
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Patent number: 6123791Abstract: A ceramic composition of matter for a process kit and a dielectric window of a reactor chamber wherein substrates are processed in a plasma of a processing gas. The ceramic composition of matter contains a ceramic compound (e.g. Al.sub.2 O.sub.3) and an oxide of a Group IIIB metal (e.g., Y.sub.2 O.sub.3). A method for processing (e.g. etching) a substrate in a chamber containing a plasma of a processing gas. The method includes passing processing power through a dielectric window which is formed from the ceramic composition of matter.Type: GrantFiled: July 29, 1998Date of Patent: September 26, 2000Assignee: Applied Materials, Inc.Inventors: Nianci Han, Hong Shih, Jie Yuan, Danny Lu, Diana Ma
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Patent number: 6071372Abstract: An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure.Type: GrantFiled: June 5, 1997Date of Patent: June 6, 2000Assignee: Applied Materials, Inc.Inventors: Yan Ye, Donald Olgado, Avi Tepman, Diana Ma, Gerald Yin, Peter Loewenhardt, Jeng H. Hwang, Steve Mak
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Patent number: 5866483Abstract: A method for etching a tungsten containing layer 25 on a substrate 10 substantially anisotropically, with good etching selectivity, and without forming excessive passivating deposits on the etched features. In the method, the substrate 10 is placed in a plasma zone 55, and process gas comprising SF.sub.6, CHF.sub.3, and N.sub.2, is introduced into the plasma zone. A plasma is formed from the process gas to anisotropically etch the tungsten containing layer 22. Preferably, the plasma is formed using combined inductive and capacitive plasma operated at a predefined inductive:capacitive power ratio.Type: GrantFiled: April 4, 1997Date of Patent: February 2, 1999Assignee: Applied Materials, Inc.Inventors: Guang-Jye Shiau, Paul Herz, Xian-Can Deng, Xiaobing Diana Ma