Abstract: An alignment mark for the coarse alignment and fine alignment of a semiconductor wafer in an exposure tool includes a first partial structure for generating a first reflection pattern in the exposure tool for the fine alignment of the semiconductor wafer, and a second partial structure for generating a second reflection pattern in the exposure tool for the coarse alignment of the semiconductor wafer. The first partial structure has a plurality of first structure elements, which are arranged relatively parallel and in a manner lying next to one another with a predetermined distance between midpoints symmetrically around the center of an inner region. The second partial structure has a plurality of second structure elements, formed in a manner corresponding to a pattern stored in the exposure tool and being arranged in the inner region.

Abstract: The measurement of the width of a pattern on a semiconductor wafer or a flat panel is carried out in an optical microscope or a scanning electron microscope in a number of measuring steps, By a computing rule, the quality of the correlation between the measured data obtained in the individual measurement steps, as well as reference data taken from the design, the value for the parameter is calculated and compared with a limiting value obtained from experience. In the event of violation of the limiting value, a signal is generated and the further processing of the object is interrupted.

Abstract: An alignment mark for the coarse alignment and fine alignment of a semiconductor wafer in an exposure tool includes a first partial structure for generating a first reflection pattern in the exposure tool for the fine alignment of the semiconductor wafer, and a second partial structure for generating a second reflection pattern in the exposure tool for the coarse alignment of the semiconductor wafer. The first partial structure has a plurality of first structure elements, which are arranged relatively parallel and in a manner lying next to one another with a predetermined distance between midpoints symmetrically around the center of an inner region. The second partial structure has a plurality of second structure elements, formed in a manner corresponding to a pattern stored in the exposure tool and being arranged in the inner region.

Abstract: The measurement of the width of a pattern on a semiconductor wafer or a flat panel is carried out in an optical microscope or a scanning electron microscope in a number of measuring steps, By a computing rule, the quality of the correlation between the measured data obtained in the individual measurement steps, as well as reference data taken from the design, the value for the parameter is calculated and compared with a limiting value obtained from experience. In the event of violation of the limiting value, a signal is generated and the further processing of the object is interrupted.