Patents by Inventor Diana Shaphirov
Diana Shaphirov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11467503Abstract: A metrology system may include a controller to receive a first metrology dataset associated with a first set of metrology target features on a sample including first features from a first exposure field on a first sample layer and second features from a second exposure field on a second sample layer, where the second exposure field partially overlaps the first exposure field. The controller may further receive a second metrology dataset associated with a second set of metrology target features including third features from a third exposure field on the second layer that overlaps the first exposure field and fourth features formed from a fourth exposure field on the first layer of the sample that overlaps the second exposure field. The controller may further determine fabrication errors based on the first and second metrology datasets and generate correctables to adjust a lithography tool based on the fabrication errors.Type: GrantFiled: March 12, 2021Date of Patent: October 11, 2022Assignee: KLA CorporationInventors: Enna Leshinsky-Altshuller, Inna Tarshish-Shapir, Mark Ghinovker, Diana Shaphirov, Guy Ben Dov, Roie Volkovich, Chris Steely
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Publication number: 20220291143Abstract: An optical metrology tool may include one or more illumination sources to generate illumination having wavelengths both within a short-wave infrared (SWIR) spectral range and outside the SWIR spectral range, illumination optics configured to direct the illumination to a sample, a first imaging channel including a first detector configured to image the sample based on a first wavelength range including at least some wavelengths in the SWIR spectral range, a second imaging channel including a second detector configured to image the sample based on a second wavelength range including at least some wavelengths outside the SWIR spectral range, and a controller. The controller may receive first images of the sample from the first detector, receive second images of the sample from the second detector, and generate an optical metrology measurement of the sample based on the first and second images.Type: ApplicationFiled: April 29, 2021Publication date: September 15, 2022Inventors: Amnon Manassen, Isaac Salib, Raviv YOHANAN, Diana Shaphirov, Eitan Hajaj, Vladimir Levinski, Avi Abramov, Michael Shentcis, Ariel Hildesheim, Yoav Grauer, Shlomo Eisenbach, Etay Lavert, Iftach Nir
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Publication number: 20220171297Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.Type: ApplicationFiled: February 18, 2022Publication date: June 2, 2022Inventors: Yoel Feler, Mark Ghinovker, Diana Shaphirov, Evgeni Gurevich, Vladimir Levinski
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Patent number: 11256177Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.Type: GrantFiled: January 15, 2020Date of Patent: February 22, 2022Assignee: KLA CorporationInventors: Yoel Feler, Mark Ghinovker, Diana Shaphirov, Evgeni Gurevich, Vladimir Levinski
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Publication number: 20210200105Abstract: A metrology system may include a controller to receive a first metrology dataset associated with a first set of metrology target features on a sample including first features from a first exposure field on a first sample layer and second features from a second exposure field on a second sample layer, where the second exposure field partially overlaps the first exposure field. The controller may further receive a second metrology dataset associated with a second set of metrology target features including third features from a third exposure field on the second layer that overlaps the first exposure field and fourth features formed from a fourth exposure field on the first layer of the sample that overlaps the second exposure field. The controller may further determine fabrication errors based on the first and second metrology datasets and generate correctables to adjust a lithography tool based on the fabrication errors.Type: ApplicationFiled: March 12, 2021Publication date: July 1, 2021Inventors: Enna Leshinsky-Altshuller, Inna Tarshish-Shapir, Mark Ghinovker, Diana Shaphirov, Guy Ben Dov, Roie Volkovich, Chris Steely
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Patent number: 10990022Abstract: A metrology system may include a controller coupled to a metrology tool. The controller may receive a metrology target design including at least a first feature formed by exposing a first exposure field on a sample with a lithography tool, and at least a second feature formed by exposing a second exposure field on the sample with the lithography tool, where the second exposure field overlaps the first exposure field at a location of a metrology target on the sample. The controller may further receive metrology data associated with the metrology target fabricated according to the metrology target design, determine one or more fabrication errors during fabrication of the metrology target based on the metrology data, and generate correctables to adjust one or more fabrication parameters of the lithography tool in one or more subsequent lithography steps based on the one or more fabrication errors.Type: GrantFiled: November 8, 2019Date of Patent: April 27, 2021Assignee: KLA CorporationInventors: Enna Leshinsky-Altshuller, Inna Tarshish-Shapir, Mark Ghinovker, Diana Shaphirov, Guy Ben Dov, Roie Volkovich, Chris Steely
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Publication number: 20210072650Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.Type: ApplicationFiled: January 15, 2020Publication date: March 11, 2021Inventors: Yoel Feler, Mark Ghinovker, Diana Shaphirov, Evgeni Gurevich, Vladimir Levinski
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Publication number: 20200201193Abstract: A metrology system may include a controller coupled to a metrology tool. The controller may receive a metrology target design including at least a first feature formed by exposing a first exposure field on a sample with a lithography tool, and at least a second feature formed by exposing a second exposure field on the sample with the lithography tool, where the second exposure field overlaps the first exposure field at a location of a metrology target on the sample. The controller may further receive metrology data associated with the metrology target fabricated according to the metrology target design, determine one or more fabrication errors during fabrication of the metrology target based on the metrology data, and generate correctables to adjust one or more fabrication parameters of the lithography tool in one or more subsequent lithography steps based on the one or more fabrication errors.Type: ApplicationFiled: November 8, 2019Publication date: June 25, 2020Inventors: Enna Leshinsky-Altshuller, Inna Tarshish-Shapir, Mark Ghinovker, Diana Shaphirov, Guy Ben Dov, Roie Volkovich, Chris Steely