Patents by Inventor Diana Yuan

Diana Yuan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070120174
    Abstract: The present invention discloses a resonant tunneling device. Further, the present invention discloses a memory storage device utilizing a resonant tunneling barrier. Moreover, the present invention teaches an SRAM circuit utilizing a resonant tunneling device. Additionally, the present invention teaches an NROM and NAND device utilizing a resonant tunneling barrier.
    Type: Application
    Filed: November 9, 2006
    Publication date: May 31, 2007
    Inventor: Diana Yuan
  • Publication number: 20070108499
    Abstract: The present invention discloses a resonant tunneling device. Further, the present invention discloses a memory storage device utilizing a resonant tunneling barrier. Moreover, the present invention teaches an SRAM circuit utilizing a resonant tunneling device. Additionally, the present invention teaches an NROM and NAND device utilizing a resonant tunneling barrier.
    Type: Application
    Filed: November 9, 2006
    Publication date: May 17, 2007
    Inventor: Diana Yuan
  • Publication number: 20070108501
    Abstract: The present invention discloses a resonant tunneling device. Further, the present invention discloses a memory storage device utilizing a resonant tunneling barrier. Moreover, the present invention teaches an SRAM circuit utilizing a resonant tunneling device. Additionally, the present invention teaches an NROM and NAND device utilizing a resonant tunneling barrier.
    Type: Application
    Filed: November 9, 2006
    Publication date: May 17, 2007
    Inventor: Diana Yuan
  • Publication number: 20070108500
    Abstract: The present invention discloses a resonant tunneling device. Further, the present invention discloses a memory storage device utilizing a resonant tunneling barrier. Moreover, the present invention teaches an SRAM circuit utilizing a resonant tunneling device. Additionally, the present invention teaches an NROM and NAND device utilizing a resonant tunneling barrier.
    Type: Application
    Filed: November 9, 2006
    Publication date: May 17, 2007
    Inventor: Diana Yuan
  • Publication number: 20070108506
    Abstract: The present invention discloses a resonant tunneling device. Further, the present invention discloses a memory storage device utilizing a resonant tunneling barrier. Moreover, the present invention teaches an SRAM circuit utilizing a resonant tunneling device. Additionally, the present invention teaches an NROM and NAND device utilizing a resonant tunneling barrier.
    Type: Application
    Filed: November 9, 2006
    Publication date: May 17, 2007
    Inventor: Diana Yuan
  • Publication number: 20070063252
    Abstract: The present invention discloses a resonant tunneling device. Further, the present invention discloses a memory storage device utilizing a resonant tunneling barrier. Moreover, the present invention teaches an SRAM circuit utilizing a resonant tunneling device. Additionally, the present invention teaches an NROM and NAND device utilizing a resonant tunneling barrier.
    Type: Application
    Filed: October 14, 2005
    Publication date: March 22, 2007
    Inventor: Diana Yuan