Patents by Inventor Diane K. Stewart
Diane K. Stewart has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8119985Abstract: A method and apparatus for determining statistical characteristics of nano-particles includes distributing the nano-particles over a surface and then determining properties of the nano-particles by automatic measurement of multiple particles or by a measurement that determines properties of multiple particles at one time, without manipulating individual nano-particles.Type: GrantFiled: May 8, 2009Date of Patent: February 21, 2012Assignee: FEI CompanyInventors: Diane K. Stewart, Daniel Rosenthal, Michel Epsztein
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Patent number: 7727681Abstract: Transmissivity is restored to a gallium stained substrate by directing an electron beam to the substrate in the presence of an etching gas. For higher concentrations of implanted gallium, the transparency can be substantially restored without reducing the thickness of the substrate. For lower doses of implanted gallium, the transmission is restored to 100%, although the thickness of the substrate is reduced. The invention is suitable for use in the repair of photolithography masks.Type: GrantFiled: January 16, 2004Date of Patent: June 1, 2010Assignee: FEI CompanyInventors: Diane K. Stewart, J. David Casey, Jr., Joan Williams Casey, legal representative, John Beaty, Christian R. Musil, Steven Berger, Sybren J. Sijbrandij
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Patent number: 7662524Abstract: Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam.Type: GrantFiled: December 29, 2008Date of Patent: February 16, 2010Assignee: FEI CompanyInventors: Diane K. Stewart, J. David Casey, Jr., Joan Williams Casey, legal representative, John Beaty, Christian R. Musil, Steven Berger
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Publication number: 20090326866Abstract: A method and apparatus for determining statistical characteristics of nano-particles includes distributing the nano-particles over a surface and then determining properties of the nano-particles by automatic measurement of multiple particles or by a measurement that determines properties of multiple particles at one time, without manipulating individual nano-particles.Type: ApplicationFiled: May 8, 2009Publication date: December 31, 2009Applicant: FEI COMPANYInventors: Diane K. Stewart, Daniel Rosenthal, Michel Epsztein
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Patent number: 7544938Abstract: A method and apparatus for determining statistical characteristics of nano-particles includes distributing the nano-particles over a surface and then determining properties of the nano-particles by automatic measurement of multiple particles or by a measurement that determines properties of multiple particles at one time, without manipulating individual nano-particles.Type: GrantFiled: July 6, 2006Date of Patent: June 9, 2009Assignee: FEI, CompanyInventors: Diane K. Stewart, Daniel Rosenthal, Michel Epsztein
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Publication number: 20090111036Abstract: Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam.Type: ApplicationFiled: December 29, 2008Publication date: April 30, 2009Applicant: FEI COMPANYInventors: Diane K. Stewart, J.David Casey, JR., Joan Williams Casey, John Beaty, Christian R. Musil, Steven Berger
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Patent number: 7504182Abstract: Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam.Type: GrantFiled: September 17, 2003Date of Patent: March 17, 2009Assignee: FEI CompanyInventors: Diane K. Stewart, Joan Williams Casey, legal representative, John Beaty, Christian R. Musil, Steven Berger, J. David Casey, Jr.
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Patent number: 6979822Abstract: A charged particle beam system uses an ion generator for charge neutralization. In some embodiments, the ion generator is configured to maintain an adequate gas pressure at the ion generator to generate ions, but a reduced pressure in the remainder of the vacuum chamber, so that another column can operate in the chamber either simultaneously or after an evacuation process that is much shorter than a process that would be required to evacuate the chamber from the full pressure required at the ion generator. The invention is particularly useful for repair of photolithography masks in a dual beam system.Type: GrantFiled: March 16, 2004Date of Patent: December 27, 2005Assignee: FEI CompanyInventors: Diane K. Stewart, W. Ralph Knowles, Brian T. Kimball
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Publication number: 20040226814Abstract: Transmissivity is restored to a gallium stained substrate by directing an electron beam to the substrate in the presence of an etching gas. For higher concentrations of implanted gallium, the transparency can be substantially restored without reducing the thickness of the substrate. For lower doses of implanted gallium, the transmission is restored to 100%, although the thickness of the substrate is reduced. The invention is suitable for use in the repair of photolithography masks.Type: ApplicationFiled: January 16, 2004Publication date: November 18, 2004Inventors: Diane K. Stewart, J. David Casey, John Beaty, Christian R. Musil, Steven Berger, Sybren J. Sijbrandij, Joan Williams Casey
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Publication number: 20040151991Abstract: Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam.Type: ApplicationFiled: September 17, 2003Publication date: August 5, 2004Inventors: Diane K. Stewart, J. David Casey, John Beaty, Christian R. Musil, Steven Berger, Joan Williams Casey