Patents by Inventor Diane R. Williams

Diane R. Williams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming high speed, high voltage fully isolated bipolar transistors on a SOI substrate
    Patent number: 5344785
    Abstract: A method of manufacturing various types of silicon devices, such as complementary bipolar PNP and NPN transistors, in a Silicon On Insulator ("SOI") Integrated Circuit ("IC"), the SOI IC having a substrate, a buried insulating layer disposed above the substrate, and a silicon device layer disposed above the insulating layer. Vertical transistors may be formed in the device layer such that each transistor is fully dielectrically isolated from another and also from other similarly manufactured silicon devices in the silicon device layer.
    Type: Grant
    Filed: June 3, 1993
    Date of Patent: September 6, 1994
    Assignee: United Technologies Corporation
    Inventors: Rick C. Jerome, Diane R. Williams, Kurt D. Humphrey