Patents by Inventor Dibyashree Koushik

Dibyashree Koushik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Perovskite contacting passivating barrier layer for solar cells
    Patent number: 11882711
    Abstract: A hybrid organic-inorganic solar cell is provided that includes a substrate, a transparent conductive oxide (TCO) layer deposited on the substrate, an n-type electron transport material (ETM) layer, a p-type hole transport material (HTM) layer, an i-type perovskite layer, and an electrode layer, where the substrate layers are arranged in an n-i-p stack, or a p-i-n stack, where the passivating barrier layer is disposed between the layers of the (i) perovskite and HTM, (ii) perovskite and ETM, (iii) perovskite and HTM, and perovskite and ETM, or (iv) TCO and ETM, and ETM and perovskite, and perovskite and HTM, or (v) substrate and TCO, and TCO and ETM, and ETM and perovskite, and perovskite layer and HTM, or (vi) a pair of ETM layers, or (vii) a pair of HTM layers.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: January 23, 2024
    Assignee: Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO
    Inventors: Yinghuan Kuang, Rudolf Emmanuel Isidore Schropp, Dibyashree Koushik, Mariadriana Creatore, Sjoerd Veenstra
  • PEROVSKITE CONTACTING PASSIVATING BARRIER LAYER FOR SOLAR CELLS
    Publication number: 20190229285
    Abstract: A hybrid organic-inorganic solar cell is provided that includes a substrate, a transparent conductive oxide (TCO) layer deposited on the substrate, an n-type electron transport material (ETM) layer, a p-type hole transport material (HTM) layer, an i-type perovskite layer, and an electrode layer, where the substrate layers are arranged in an n-i-p stack, or a p-i-n stack, where the passivating barrier layer is disposed between the layers of the (i) perovskite and HTM, (ii) perovskite and ETM, (iii) perovskite and HTM, and perovskite and ETM, or (iv) TCO and ETM, and ETM and perovskite, and perovskite and HTM, or (v) substrate and TCO, and TCO and ETM, and ETM and perovskite, and perovskite layer and HTM, or (vi) a pair of ETM layers, or (vii) a pair of HTM layers.
    Type: Application
    Filed: July 7, 2017
    Publication date: July 25, 2019
    Applicant: Technische Universiteit Eindhoven
    Inventors: Yinghuan Kuang, Rudolf Emmanuel Isidore Schropp, Dibyashree Koushik, Mariadriana Creatore, Sjoerd Veenstra