Patents by Inventor Dichi Tsai

Dichi Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with a noise prevention structure
    Patent number: 7642615
    Abstract: A semiconductor device including a substrate of a first semiconductor type with a pad region and a noise prevention structure in the substrate, on least one side of the pad region. The device further includes the substrate structure, a pad, and a dielectric layer therebetween.
    Type: Grant
    Filed: November 20, 2008
    Date of Patent: January 5, 2010
    Assignee: Airoha Technology Corp.
    Inventors: Sheng-Yow Chen, Dichi Tsai
  • SEMICONDUCTOR DEVICE WITH A NOISE PREVENTION STRUCTURE
    Publication number: 20090102011
    Abstract: A semiconductor device including a substrate of a first semiconductor type with a pad region and a noise prevention structure in the substrate, on least one side of the pad region. The device further includes the substrate structure, a pad, and a dielectric layer therebetween.
    Type: Application
    Filed: November 20, 2008
    Publication date: April 23, 2009
    Inventors: Sheng-Yow CHEN, Dichi Tsai
  • Semiconductor device with a noise prevention structure
    Patent number: 7468546
    Abstract: A semiconductor device. The device includes a substrate of the first semiconductor type comprising a pad region and a noise prevention structure in the substrate, on least one side of the pad region. The device further includes the substrate structure, a pad, and a dielectric layer therebetween.
    Type: Grant
    Filed: August 25, 2005
    Date of Patent: December 23, 2008
    Assignee: Airoha Technology Corp.
    Inventors: Sheng-Yow Chen, Dichi Tsai
  • Semiconductor device
    Publication number: 20060046405
    Abstract: A semiconductor device. The device includes a substrate of the first semiconductor type comprising a pad region and a noise prevention structure in the substrate, on least one side of the pad region. The device further includes the substrate structure, a pad, and a dielectric layer therebetween.
    Type: Application
    Filed: August 25, 2005
    Publication date: March 2, 2006
    Inventors: Sheng-Yow Chen, Dichi Tsai