Abstract: A field-effect transistor. The field-effect transistor includes: a source layer doped according to a first type, a drain layer doped according to a first type, a channel layer located vertically between the source layer doped according to the first type and the drain layer doped according to the first type, and a gate trench which extends vertically from the source layer doped according to the first type to the drift layer doped according to the first type and adjoins the channel layer. The channel layer has, at least on average, a lower doping of the second type and a higher doping of the first type in a region that is more than a specified distance from the gate trench than in a region that is less than the specified distance from the gate trench. Methods for production are also described.

Abstract: A vertical field-effect transistor. The transistor includes: a drift region having a first conductivity type; a semiconductor fin on or over the drift region; and a source/drain electrode on or over the semiconductor fin, the semiconductor fin having an electrically conductive region that connects the source/drain electrode to the drift region in electrically conductive fashion, and having a limiting structure that is formed laterally next to the electrically conductive region and that extends from the source/drain electrode to the drift region, the limiting structure being set up to limit a conductive channel of the vertical field-effect transistor in the semiconductor fin to the area of the electrically conductive region.

Abstract: A vertical field effect transistor. The vertical field effect transistor includes: a drift area including a first conductivity type; a semiconductor fin on or above the drift area, a source/drain electrode on or above the drift area; and a shielding structure, which is situated laterally adjacent to the at least one side wall of the semiconductor fin in the drift area, the shielding structure including a second conductivity type, which differs from the first conductivity type, and the semiconductor fin being electrically conductively connected to the source/drain electrode.

Abstract: A vertical field effect transistor. The vertical field effect transistor includes: a drift area; a semiconductor fin on or above the drift area; a connection area on or above the semiconductor fin; and a gate electrode, which is formed adjacent to at least one side wall of the semiconductor fin, the semiconductor fin, in a first section, which is situated laterally adjacent to the gate electrode, having a lesser lateral extension than in a second section, which contacts the drift area, and/or than in a third section, which contacts the connection area.

Abstract: A trench transistor. The transistor including: a semiconductor region, a trench structure formed in the semiconductor region; a gate insulation layer and an electrically conductive gate layer formed on the gate insulation layer in the trench structure, and a gate contact, which is electrically conductively connected to the gate layer in an edge area of the trench transistor. A thickness of the gate insulation layer in the edge area of the trench transistor is greater than in an active area of the trench transistor.

Abstract: A transistor cell including a semiconductor substrate, which has a front side and a rear side, the front side being situated opposite the rear side. An epitaxial layer is situated on the front side. Channel regions are situated on the epitaxial layer. Source regions are situated on the channel regions. A trench and field shielding regions extending from the front side of the semiconductor substrate into the epitaxial layer, the field shielding regions each being situated laterally spaced apart from the trench and the trench having a shallower depth than the field shielding regions. An implanted expansion region having a particular thickness is situated below the trench.

Abstract: A particle sensor that includes a first laser Doppler sensor and at least a second laser Doppler sensor, as well as a control unit that is configured to carry out self-interference measurements with the first laser Doppler sensor and simultaneously with at least the second laser Doppler sensor.

Abstract: A pump apparatus for gaseous media. A film is provided on a substrate and is connected to the substrate in the edge region of the film. By interaction between a magnetic device on the substrate and a magnetic device on the film, the film can be raised or lowered on the substrate. A pumping motion is thereby produced.

Abstract: The invention relates to an implant device comprising a sensor module which comprises one or more first fastening means, an implant module which comprises one or more second fastening means, and a connecting module, by means of which the sensor module is connected to the implant module via the one or the first fastening means and via the one or the second fastening means, and comprising a fold axis, along which the implant device can be folded up.

Abstract: The invention relates to an implant device comprising a sensor module which comprises one or more first fastening means, an implant module which comprises one or more second fastening means, and a connecting module, by means of which the sensor module is connected to the implant module via the one or the first fastening means and via the one or the second fastening means, and comprising a fold axis, along which the implant device can be folded up.

Abstract: A manufacturing method for a porous microneedle array includes: forming a plurality of porous microneedle arrays, each having at least one microneedle and a porous carrier zone lying beneath it on the face of a semiconductor substrate; forming an interlayer between a non-porous residual layer of the semiconductor substrate located on the back side of the semiconductor substrate and the carrier zone, which has greater porosity than the carrier zone; detaching the residual layer from the carrier zone by breaking up the interlayer; and separating the microneedle arrays into corresponding chips.

Abstract: A system having a medication reservoir for a medication dosing apparatus for administering a liquid medication, and having a medication supply container holding the liquid medication, a filling device being provided for the automatic filling of the medication reservoir with the medication coming from the medication supply container. Fluidic connections may be provided between individual components for transfer and filling of the liquid medication. This system for administering a medication has the advantage that reliable and simple filling of the medication may be performed.

Abstract: An array for placement on the skin of a human or animal patient for the purpose of the transdermal application of pharmaceuticals, toxins or active agents, having microneedles that are situated on a carrier substrate, the microneedles having a preset breaking point in the area of the transition to the carrier substrate.

Abstract: A method for manufacturing porous microstructures in a silicon semiconductor substrate, porous microstructures manufactured according to this method, and the use thereof.

Abstract: A method for producing porous microneedles (10) situated in an array on a silicon substrate includes: providing a silicon substrate, applying a first etching mask, patterning microneedles using a DRIE process (“deep reactive ion etching”), removing the first etching mask, at least partially porosifying the Si substrate, the porosification beginning on the front side of the Si substrate and a porous reservoir being formed.

Abstract: A method for manufacturing porous microstructures in a silicon semiconductor substrate, porous microstructures manufactured according to this method, and the use thereof.

Abstract: A closed capsular tension ring, with a coil having at least one winding turn 6, wherein the winding turn 6 is disposed in the capsular tension ring 1. The closed capsular tension ring according to the invention has the advantage that it may be used without limitation to a particular artificial lens or to a particular shape of artificial lens.

Abstract: A manufacturing method for a porous microneedle array includes: forming a plurality of porous microneedle arrays, each having at least one microneedle and a porous carrier zone lying beneath it on the face of a semiconductor substrate; forming an interlayer between a non-porous residual layer of the semiconductor substrate located on the back side of the semiconductor substrate and the carrier zone, which has greater porosity than the carrier zone; detaching the residual layer from the carrier zone by breaking up the interlayer; and separating the microneedle arrays into corresponding chips.

Abstract: A system having a medication reservoir for a medication dosing apparatus for administering a liquid medication, and having a medication supply container holding the liquid medication, wherein a filling device is also provided for the automatic filling of the medication reservoir with the medication coming from the medication supply container. This system for administering a medication has the advantage that reliable and simple filling of the medication may be performed.

Abstract: A method and a device for treating a material having nanoscale pores), especially implant material for the treatment of living cells, as provided. The method distinguished in that the surface tension of a substance (10) provided for filling the volumes of the nanoscale pores (9) is reduced. The present invention also includes a device for carrying out this method.