Patents by Inventor Didier Celi

Didier Celi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Heterojunction bipolar transistor
    Patent number: 9704967
    Abstract: The present disclosure is directed to a method that includes exposing a surface of a silicon substrate in a first region between first and second isolation trenches, etching the silicon substrate in the first region to form a recess between the first and second isolation trenches, and forming a base of a heterojunction bipolar transistor by selective epitaxial growth of a film comprising SiGe in the recess.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: July 11, 2017
    Assignee: STMICROELECTRONICS S.A.
    Inventors: Pascal Chevalier, Didier Celi, Jean-Pierre Blanc, Alain Chantre
  • Heterojunction bipolar transistor
    Patent number: 9362380
    Abstract: The present disclosure is directed to a method that includes exposing a surface of a silicon substrate in a first region between first and second isolation trenches, etching the silicon substrate in the first region to form a recess between the first and second isolation trenches, =; and forming a base of a heterojunction bipolar transistor by selective epitaxial growth of a film comprising SiGe in the recess.
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: June 7, 2016
    Assignee: STMICROELECTRONICS S.A.
    Inventors: Pascal Chevalier, Didier Celi, Jean-Pierre Blanc, Alain Chantre
  • HETEROJUNCTION BIPOLAR TRANSISTOR
    Publication number: 20160005836
    Abstract: The present disclosure is directed to a method that includes exposing a surface of a silicon substrate in a first region between first and second isolation trenches, etching the silicon substrate in the first region to form a recess between the first and second isolation trenches, and forming a base of a heterojunction bipolar transistor by selective epitaxial growth of a film comprising SiGe in the recess.
    Type: Application
    Filed: September 14, 2015
    Publication date: January 7, 2016
    Inventors: Pascal CHEVALIER, Didier CELI, Jean-Pierre BLANC, Alain CHANTRE
  • HETEROJUNCTION BIPOLAR TRANSISTOR
    Publication number: 20140167116
    Abstract: The present disclosure is directed to a method that includes exposing a surface of a silicon substrate in a first region between first and second isolation trenches, etching the silicon substrate in the first region to form a recess between the first and second isolation trenches,=; and forming a base of a heterojunction bipolar transistor by selective epitaxial growth of a film comprising SiGe in the recess.
    Type: Application
    Filed: December 12, 2013
    Publication date: June 19, 2014
    Applicant: STMicroelectronics S.A.
    Inventors: Pascal Chevalier, Didier Celi, Jean-Pierre Blanc, Alain Chantre