Abstract: A device for switching an electrical signal, controlled by an optical wave and having an on state and an off state, which can be inserted into a microwave transmission line, comprises a semiconductor substrate on which two conductive tracks are formed, these tracks being separated by a gap providing electrical insulation between the two tracks and each being connected to an input port and an output port, in the on state the electrical contact between the two tracks being established by illuminating the substrate in the region of the gap by means of the optical wave, the input impedance and the output impedance of said switching device being mismatched to the impedance of the transmission line in the off state and are matched to the impedance of the transmission line in the on state.

Abstract: A device for switching an electrical signal, controlled by an optical wave and having an on state and an off state, which can be inserted into a microwave transmission line, comprises a semiconductor substrate on which two conductive tracks are formed, these tracks being separated by a gap providing electrical insulation between the two tracks and each being connected to an input port and an output port, in the on state the electrical contact between the two tracks being established by illuminating the substrate in the region of the gap by means of the optical wave, the input impedance and the output impedance of said switching device being mismatched to the impedance of the transmission line in the off state and are matched to the impedance of the transmission line in the on state.

Abstract: A semiconductor electrooptic monolithic component comprising successively a first section capable of emitting light at a first wavelength and including a first active layer, a second section capable of absorbing light at the said first wavelength and including a second active layer, and a third section capable of detecting light at a second wavelength and including a third active layer. The component is characterized in that the second active layer is designed to ensure in the said second section an absorption higher than that which would be allowed by an active layer identical to the said first layer.

Abstract: A semiconductor electrooptic monolithic component comprising successively a first section capable of emitting light at a first wavelength and including a first active layer, a second section capable of absorbing light at the said first wavelength and including a second active layer, and a third section capable of detecting light at a second wavelength and including a third active layer. The component is characterized in that the second active layer is designed to ensure in the said second section an absorption higher than that which would be allowed by an active layer identical to the said first layer.

Abstract: This invention relates to a process for producing a photoelectric detector of the high-gain photoresistor type comprising on a substrate an active layer of doped gallium arsenide provided with two electrodes with ohmic contacts for connection to a user circuit, said process consisting in applying to the active layer a treatment producing a selective attack of the surface of said layer modifying its degree of compensation in gallium and in arsenic and the superficial charge states.