Patents by Inventor Didier Gourier

Didier Gourier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10937921
    Abstract: This invention relates to a method to manufacture a chip to detect the direct conversion of X-rays. It also relates to a direct conversion detector for X-rays using such a chip and dental radiology equipment using at least one such detector. The method to manufacture the wafer comprises a step for applying pressure (3, 4, 4 a) to a powdered polycrystalline semiconductor material and a step for heating (5-9) during a set time period. It comprises a preliminary step for providing an impurity level of at least 0.2% in the polycrystalline semiconductor material.
    Type: Grant
    Filed: June 21, 2012
    Date of Patent: March 2, 2021
    Assignee: TROPHY
    Inventors: Dominique Biava, Mathieu Rault, Jean-Marc Inglese, Sylvie Bothorel, Didier Gourier, Laurent Binet, Philippe Barboux, Jean-Pierre Ponpon
  • Patent number: 9877653
    Abstract: Multimodal optical and magnetic resonance imaging methods based on the use of persistent luminescence nanoparticles. Use of mesoporous persistent luminescence <<core-shell>> complexes for theranostic applications.
    Type: Grant
    Filed: January 30, 2013
    Date of Patent: January 30, 2018
    Assignee: Centre National de la Recherche Scientifique (CNRS)
    Inventors: Thomas Maldiney, Cyrille Richard, Daniel Scherman, Didier Gourier, Bruno Viana, Aurelie Bessiere
  • Publication number: 20150155421
    Abstract: This invention relates to a method to manufacture a chip to detect the direct conversion of X-rays. It also relates to a direct conversion detector for X-rays using such a chip and dental radiology equipment using at least one such detector. The method to manufacture the wafer comprises a step for applying pressure (3, 4, 4a) to a powdered polycrystalline semiconductor material and a step for heating (5-9) during a set time period. It comprises a preliminary step for providing an impurity level of at least 0.2% in the polycrystalline semiconductor material.
    Type: Application
    Filed: June 21, 2012
    Publication date: June 4, 2015
    Applicant: TROPHY
    Inventors: Dominique Biava, Mathieu Rault, Jean-Marc Inglese, Sylvie Bothorel, Didier Gourier, Laurent Binet, Philippe Barboux, Jean-Pierre Ponpon
  • Publication number: 20140371575
    Abstract: Multimodal optical and magnetic resonance imaging methods based on the use of persistent luminescence nanoparticles. Use of mesoporous persistent luminescence <<core-shell>> complexes for theranostic applications.
    Type: Application
    Filed: January 30, 2013
    Publication date: December 18, 2014
    Inventors: Thomas Maldiney, Cyrille Richard, Daniel Scherman, Didier Gourier, Bruno Viana, Aurelie Bessiere