Abstract: This dosimeter comprises: a transducer material capable, when it is excited by a secondary ionizing radiation, of generating photons or electric charges, an amplifying layer capable, in response to its excitation by the primary ionizing radiation, of generating the secondary ionizing radiation. This amplifying layer comprises a first and a second amplifying sublayer stacked on top of one another. The first and the second amplifying sublayers are composed of at least 70%, by weight, respectively, of at least one first and one second material, the atomic numbers of which are greater than or equal to 29. The atomic number of the first material being less than the atomic number of the second material. The first sublayer is interposed between the second sublayer and the transducer material.

Abstract: This dosimeter comprises: a transducer material capable, when it is excited by a secondary ionizing radiation, of generating photons or electric charges, an amplifying layer capable, in response to its excitation by the primary ionizing radiation, of generating the secondary ionizing radiation. This amplifying layer comprises a first and a second amplifying sublayer stacked on top of one another. The first and the second amplifying sublayers are composed of at least 70%, by weight, respectively, of at least one first and one second material, the atomic numbers of which are greater than or equal to 29. The atomic number of the first material being less than the atomic number of the second material. The first sublayer is interposed between the second sublayer and the transducer material.

Abstract: This invention relates to a process for manufacturing nanowire structures, the process comprising the following steps: manufacture of a thin semiconductor film (1) extending between a first terminal (4) and a second terminal (5), and passage of a current between the first and the second terminals so as to form at least one continuous overthickness (R1, R2, R3) in the thin semiconductor film by migration of a fraction of the semiconductor material, under the action of the current, the continuous overthickness being formed along the direction of the current that passes through the film.

Abstract: This invention relates to a process for manufacturing nanowire structures, the process comprising the following steps: manufacture of a thin semiconductor film (1) extending between a first terminal (4) and a second terminal (5), and passage of a current between the first and the second terminals so as to form at least one continuous overthickness (R1, R2, R3) in the thin semiconductor film by migration of a fraction of the semiconductor material, under the action of the current, the continuous overthickness being formed along the direction of the current that passes through the film.