Abstract: In response to a request to store new data at a memory location of a bitwise programmable non-volatile memory, data stored at the memory location of the bitwise programmable memory is sensed. The bits of the sensed data are compared with bits of the new data. An indication of a cost difference is determined between a first burst of bitwise programming operations associated with programming bits of the new data which are different from bits of the sensed data, and a second burst of bitwise programming operations associated with programming bits of a complementary inversion of the new data which are different from bits of the sensed data. One of the first burst of bitwise programming operations or the second burst of bitwise programming operations is executed based on the generated indication of the cost difference.

Abstract: In response to a request to store new data at a memory location of a bitwise programmable non-volatile memory, data stored at the memory location of the bitwise programmable memory is sensed. The bits of the sensed data are compared with bits of the new data. An indication of a cost difference is determined between a first burst of bitwise programming operations associated with programming bits of the new data which are different from bits of the sensed data, and a second burst of bitwise programming operations associated with programming bits of a complementary inversion of the new data which are different from bits of the sensed data. One of the first burst of bitwise programming operations or the second burst of bitwise programming operations is executed based on the generated indication of the cost difference.

Abstract: A charge pump system is provided that includes at least one first pump for generating a first working voltage, a second pump for generating a second working voltage, and a third pump for generating a third working voltage. The first pump is connected to an internal supply voltage reference that can having a limited value, and has an output terminal connected to the second and third pumps so as to supplying them with the first working voltage as their supply voltage. A method is also provided for managing the generation of voltages to be used with such a charge pump system.

Abstract: An EEPROM memory having a matrix of individually selectable memory cells, the matrix having a plurality of columns, a plurality of data lines each coupled with the cells of a corresponding column, the data lines being grouped in a plurality of packets, a plurality of biasing elements for providing a biasing signal to the data lines, and means for selecting the biasing elements for a selected one of the packets, wherein each biasing element is associated with corresponding data lines of a plurality of packets, the biasing element comprising switching means for selectively applying the biasing signal to a selected one of the associated data lines.

Abstract: A charge pump system is provided that includes at least one first pump for generating a first working voltage, a second pump for generating a second working voltage, and a third pump for generating a third working voltage. The first pump is connected to an internal supply voltage reference that can having a limited value, and has an output terminal connected to the second and third pumps so as to supplying them with the first working voltage as their supply voltage. A method is also provided for managing the generation of voltages to be used with such a charge pump system.