Patents by Inventor Diego Feijóo
Diego Feijóo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9230794Abstract: Semiconductor wafers are cleaned, dried, and hydrophilized the following steps in the order stated: a) treating the semiconductor wafer with a liquid aqueous solution containing hydrogen fluoride, the semiconductor wafer rotating about its center axis at least occasionally, and b) drying the semiconductor wafer by rotation of the semiconductor wafer about its center axis at a rotational speed of 1000 to 5000 revolutions per minute in an ozone-containing atmosphere, the liquid aqueous solution containing hydrogen fluoride flowing away from the semiconductor wafer on account of the centrifugal force generated by the rotation, and the surface of the semiconductor wafer being hydrophilized by ozone.Type: GrantFiled: June 6, 2008Date of Patent: January 5, 2016Assignee: SILTRONIC AGInventors: Guenter Schwab, Clemens Zapilko, Thomas Buschhardt, Diego Feijoo
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Patent number: 8685270Abstract: A method for producing a semiconductor wafer sliced from a single crystal includes rounding an edge using a grinding disk containing abrasives with an average grain size of 20.0-60.0 ?m. A first simultaneous double-side material-removing process is performed wherein the semiconductor wafers are processed between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 5.0-20.0 ?m, wherein the semiconductor wafer is placed in a cutout in one of a plurality of carriers rotatable by a rolling apparatus such that the semiconductor wafer lies in a freely movable manner in the carrier and the wafer is movable on a cycloidal trajectory. A second simultaneous double-side material-removing process is performed including processing the semiconductor wafers between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 0.5-15.0 ?m.Type: GrantFiled: October 12, 2010Date of Patent: April 1, 2014Assignee: Siltronic AGInventors: Juergen Schwandner, Thomas Buschhardt, Diego Feijoo, Michael Kerstan, Georg Pietsch, Guenter Schwab
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Patent number: 8580046Abstract: Semiconductor wafers are treated in a liquid container filled at least partly with a solution containing hydrogen fluoride, such that surface oxide dissolves, are transported out of the solution along a transport direction and dried, and are then treated with an ozone-containing gas to oxidize the surface of the semiconductor wafer, wherein part of the semiconductor wafer surface comes into contact with the ozone-containing gas while another part of the surface is still in contact with the solution, and wherein the solution and the ozone-containing gas are spatially separated such that they do not come into contact with one another.Type: GrantFiled: November 13, 2012Date of Patent: November 12, 2013Assignee: Siltronic AGInventors: Guenter Schwab, Diego Feijoo, Thomas Buschhardt, Hans-Joachim Luthe, Franz Sollinger
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Patent number: 8372213Abstract: Semiconductor wafers are treated in a liquid container filled at least partly with a solution containing hydrogen fluoride, such that surface oxide dissolves, are transported out of the solution along a transport direction and dried, and are then treated with an ozone-containing gas to oxidize the surface of the semiconductor wafer, wherein part of the semiconductor wafer surface comes into contact with the ozone-containing gas while another part of the surface is still in contact with the solution, and wherein the solution and the ozone-containing gas are spatially separated such that they do not come into contact with one another.Type: GrantFiled: December 3, 2009Date of Patent: February 12, 2013Assignee: Siltronic AGInventors: Guenter Schwab, Diego Feijoo, Thomas Buschhardt, Hans-Joachim Luthe, Franz Sollinger
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Publication number: 20120248068Abstract: The present invention relates to an apparatus and a method for the fluidic inline-treatment of flat substrates with at least one process module. In particular, the invention relates to such a treatment during the gentle and controlled transport of the substrates, wherein the treatment can also just relate to the transport of the substrates. According to the invention, a process module 1 is provided which comprises a treatment chamber 2 having at least one treatment surface 7A being substantially horizontally arranged in a treatment plane 5 and being designed for the formation of a lower fluid cushion 6A, wherein two openings in the form of entry 3 and exit 4 for the linear feed-through of the substrates 22 in the same plane are assigned to the treatment surface 7A, and at least one feed device with at least one catch 10 for the controlled feed 9 of the substrates 22 within the treatment chamber 2. Furthermore, the invention provides a method using the apparatus according to the invention.Type: ApplicationFiled: June 14, 2010Publication date: October 4, 2012Applicants: SILTRONIC AG, RENA GMBHInventors: Frank Schienle, Mario Schwab, Rahim Hamid, Lothar Hermann, Günter Schwab, Thomas Buschhardt, Diego Feijóo, Konrad Kaltenbach, Franz Sollinger
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Patent number: 8070882Abstract: A method for the wet-chemical treatment of a semiconductor wafer involves: a) rotating a semiconductor wafer; b) applying a cleaning liquid comprising gas bubbles having a diameter of 100 ?m or less to the rotating wafer such that a liquid film forms on the wafer; c) exposing the rotating semiconductor wafer to a gas atmosphere containing a reactive gas; and d) removing the liquid film from the wafer.Type: GrantFiled: December 3, 2008Date of Patent: December 6, 2011Assignee: Siltronic AGInventors: Guenter Schwab, Clemens Zapilko, Thomas Buschhardt, Diego Feijoo, Teruo Haibara, Yoshihiro Mori
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Patent number: 7988876Abstract: To reduce and homogenize the thickness of a semiconductor layer which lies on the surface of an electrically insulating material, the surface of the semiconductor layer is exposed to the action of an etchant whose redox potential is adjusted as a function of the material and the desired final thickness of the semiconductor layer, so that the material erosion per unit time on the surface of the semiconductor layer due to the etchant becomes less as the thickness of the semiconductor layer decreases, and is only from 0 to 10% of the thickness per second when the desired thickness is reached. The method is carried out without the action of light or the application of an external electrical voltage.Type: GrantFiled: January 31, 2008Date of Patent: August 2, 2011Assignee: Siltronic AGInventors: Diego Feijoo, Oliver Riemenschneider, Reinhold Wahlich
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Patent number: 7938911Abstract: Semiconductor wafers are cleaned using a cleaning solution containing an alkaline ammonium component in an initial composition, wherein the semiconductor wafer is brought into contact with the cleaning solution in an individual-wafer treatment, and in the course of cleaning hydrogen fluoride is added as further component to the cleaning solution, and the cleaning solution has at the end of cleaning, a composition that differs from the initial composition.Type: GrantFiled: June 17, 2008Date of Patent: May 10, 2011Assignee: Siltronic AGInventors: Clemens Zapilko, Thomas Buschhardt, Diego Feijoo, Guenter Schwab
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Publication number: 20110097975Abstract: A method for producing a semiconductor wafer sliced from a single crystal includes rounding an edge using a grinding disk containing abrasives with an average grain size of 20.0-60.0 ?m. A first simultaneous double-side material-removing process is performed wherein the semiconductor wafers are processed between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 5.0-20.0 ?m, wherein the semiconductor wafer is placed in a cutout in one of a plurality of carriers rotatable by a rolling apparatus such that the semiconductor wafer lies in a freely movable manner in the carrier and the wafer is movable on a cycloidal trajectory. A second simultaneous double-side material-removing process is performed including processing the semiconductor wafers between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 0.5-15.0 ?m.Type: ApplicationFiled: October 12, 2010Publication date: April 28, 2011Applicant: SILTRONIC AGInventors: Juergen SCHWANDNER, Thomas BUSCHHARDT, Diego FEIJOO, Michael KERSTAN, Georg PIETSCH, Guenter SCHWAB
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Patent number: 7829467Abstract: Semiconductor wafers are cut from a crystal and subjected to a series of processing steps in which material is removed from a front side and a rear side of the semiconductor wafers, comprising the following processing steps: a mechanical processing step, an etching step in which the semiconductor wafers are oxidized and material is removed from the front side of the wafers with the aid of a gaseous etchant containing hydrofluoric acid at a temperature of 20 to 70° C., and a polishing step in which the front side of the semiconductor wafer is polished, the processing steps in which the front side of the semiconductor wafer is polished causing material removal which does not amount to more than 5 ?m in total.Type: GrantFiled: May 4, 2007Date of Patent: November 9, 2010Assignee: Siltronic AGInventors: Maximilian Stadler, Günter Schwab, Diego Feijóo, Karlheinz Langsdorf
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Patent number: 7799692Abstract: Treatment of a semiconductor wafer employs: a) position-dependent measuring of a parameter characterizing the semiconductor wafer to determine a position-dependent value of the parameter over an entire surface of the semiconductor wafer, b) oxidizing the entire surface of the semiconductor wafer under the action of an oxidizing agent with simultaneous exposure of the entire surface, the oxidation rate and thus the thickness of the resulting oxide layer dependent on the light intensity at the surface of the semiconductor wafer, and c) removing of the oxide layer, the light intensity in step b) predefined in a position-dependent manner such that differences in the position-dependent values of the parameter measured are reduced by the position-dependent oxidation rate resulting in step b) and subsequent removal of the oxide layer in step c).Type: GrantFiled: May 17, 2007Date of Patent: September 21, 2010Assignee: Siltronic AGInventors: Brian Murphy, Diego Feijóo, Reinhold Wahlich
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Publication number: 20100139706Abstract: Semiconductor wafers are treated in a liquid container filled at least partly with a solution containing hydrogen fluoride, such that surface oxide dissolves, are transported out of the solution along a transport direction and dried, and are then treated with an ozone-containing gas to oxidize the surface of the semiconductor wafer, wherein part of the semiconductor wafer surface comes into contact with the ozone-containing gas while another part of the surface is still in contact with the solution, and wherein the solution and the ozone-containing gas are spatially separated such that they do not come into contact with one another.Type: ApplicationFiled: December 3, 2009Publication date: June 10, 2010Applicant: SILTRONIC AGInventors: Guenter Schwab, Diego Feijoo, Thomas Buschhardt, Hans-Joachim Luthe, Franz Sollinger
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Publication number: 20090145457Abstract: A method for the wet-chemical treatment of a semiconductor wafer involves: a) rotating a semiconductor wafer; b) applying a cleaning liquid comprising gas bubbles having a diameter of 100 ?m or less to the rotating wafer such that a liquid film forms on the wafer; c) exposing the rotating semiconductor wafer to a gas atmosphere containing a reactive gas; and d) removing the liquid film from the wafer.Type: ApplicationFiled: December 3, 2008Publication date: June 11, 2009Applicant: SILTRONIC AGInventors: Guenter Schwab, Clemens Zapilko, Thomas Buschhardt, Diego Feijoo, Teruo Haibara, Yoshihiro Mori
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Patent number: 7538008Abstract: A layer structure comprising a smoothed interlayer and an overlying layer applied on the interlayer, wherein the interlayer is treated with a gaseous etchant containing hydrogen fluoride, a material removal being obtained thereby and the interlayer being smoothed.Type: GrantFiled: May 3, 2007Date of Patent: May 26, 2009Assignee: Siltronic AGInventors: Diego Feijoo, Guenter Schwab, Thomas Buschhardt
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Publication number: 20090071507Abstract: Semiconductor wafers are cleaned by forming a first liquid film on a surface of the semiconductor wafer to be cleaned, the first liquid film containing hydrogen fluoride and ozone; replacing the first liquid film with a second aqueous liquid film which contains hydrogen fluoride and ozone, the concentration of hydrogen fluoride in the second liquid film being lower than in the first liquid film; and removing the second liquid film.Type: ApplicationFiled: August 27, 2008Publication date: March 19, 2009Applicant: SILTRONIC AGInventors: Thomas Buschhardt, Clemens Zapilko, Diego Feijoo, Guenter Schwab
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Publication number: 20090007940Abstract: Semiconductor wafers are cleaned using a cleaning solution containing an alkaline ammonium component in an initial composition, wherein the semiconductor wafer is brought into contact with the cleaning solution in an individual-wafer treatment, and in the course of cleaning hydrogen fluoride is added as further component to the cleaning solution, and the cleaning solution has at the end of cleaning, a composition that differs from the initial composition.Type: ApplicationFiled: June 17, 2008Publication date: January 8, 2009Applicant: SILTRONIC AGInventors: Clemens Zapilko, Thomas Buschhardt, Diego Feijoo, Guenter Schwab
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Publication number: 20080308122Abstract: Semiconductor wafers are cleaned, dried, and hydrophilized the following steps in the order stated: a) treating the semiconductor wafer with a liquid aqueous solution containing hydrogen fluoride, the semiconductor wafer rotating about its center axis at least occasionally, and b) drying the semiconductor wafer by rotation of the semiconductor wafer about its center axis at a rotational speed of 1000 to 5000 revolutions per minute in an ozone-containing atmosphere, the liquid aqueous solution containing hydrogen fluoride flowing away from the semiconductor wafer on account of the centrifugal force generated by the rotation, and the surface of the semiconductor wafer being hydrophilized by ozone.Type: ApplicationFiled: June 6, 2008Publication date: December 18, 2008Applicant: SILTRONIC AGInventors: Guenter Schwab, Clemens Zapilko, Thomas Buschhardt, Diego Feijoo
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Publication number: 20080188084Abstract: To reduce and homogenize the thickness of a semiconductor layer which lies on the surface of an electrically insulating material, the surface of the semiconductor layer is exposed to the action of an etchant whose redox potential is adjusted as a function of the material and the desired final thickness of the semiconductor layer, so that the material erosion per unit time on the surface of the semiconductor layer due to the etchant becomes less as the thickness of the semiconductor layer decreases, and is only from 0 to 10% of the thickness per second when the desired thickness is reached. The method is carried out without the action of light or the application of an external electrical voltage.Type: ApplicationFiled: January 31, 2008Publication date: August 7, 2008Applicant: SILTRONIC AGInventors: Diego Feijoo, Oliver Riemenschneider, Reinhold Wahlich
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Publication number: 20070267142Abstract: Treatment of a semiconductor wafer employs: a) position-dependent measuring of a parameter characterizing the semiconductor wafer to determine a position-dependent value of the parameter over an entire surface of the semiconductor wafer, b) oxidizing the entire surface of the semiconductor wafer under the action of an oxidizing agent with simultaneous exposure of the entire surface, the oxidation rate and thus the thickness of the resulting oxide layer dependent on the light intensity at the surface of the semiconductor wafer, and c) removing of the oxide layer, the light intensity in step b) predefined in a position-dependent manner such that differences in the position-dependent values of the parameter measured are reduced by the position-dependent oxidation rate resulting in step b) and subsequent removal of the oxide layer in step c).Type: ApplicationFiled: May 17, 2007Publication date: November 22, 2007Applicant: SILTRONIC AGInventors: Brian Murphy, Diego Feijoo, Reinhold Wahlich
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Publication number: 20070259531Abstract: Semiconductor wafers are cut from a crystal and subjected to a series of processing steps in which material is removed from a front side and a rear side of the semiconductor wafers, comprising the following processing steps: a mechanical processing step, an etching step in which the semiconductor wafers are oxidized and material is removed from the front side of the wafers with the aid of a gaseous etchant containing hydrofluoric acid at a temperature of 20 to 70° C., and a polishing step in which the front side of the semiconductor wafer is polished, the processing steps in which the front side of the semiconductor wafer is polished causing material removal which does not amount to more than 5 ?m in total.Type: ApplicationFiled: May 4, 2007Publication date: November 8, 2007Applicant: SILTRONIC AGInventors: Maximilian Stadler, Gunter Schwab, Diego Feijoo, Karlheinz Langsdorf