Patents by Inventor Diego J. Olego

Diego J. Olego has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
    Patent number: 5247349
    Abstract: Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the <100> <110>, and surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity.
    Type: Grant
    Filed: August 22, 1990
    Date of Patent: September 21, 1993
    Assignee: Stauffer Chemical Company
    Inventors: Diego J. Olego, John A. Baumann, Rozalie Schachter, Harvey B. Serreze, William E. Spicer, Paul M. Raccah
  • Passivation of InP by plasma deposited phosphorus
    Patent number: 4696828
    Abstract: Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the <100> <110>, and <111> surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity.
    Type: Grant
    Filed: May 21, 1985
    Date of Patent: September 29, 1987
    Assignee: Stauffer Chemical Company
    Inventors: Rozalie Schachter, Marcello Viscogliosi, Lewis A. Bunz, Diego J. Olego, Harvey B. Serreze, Paul M. Raccah
  • Use of pnictide films for wave-guiding in opto-electronic devices
    Patent number: 4678266
    Abstract: The semiconductor layer of an opto-electronic device has one or more films of a pnictide rich material deposited thereon. The pnictide has a smaller reflective index than the semiconductor layer. These films provide a wave-guiding effect to light within the semiconductor layer in opto-electronic devices, such as solid state lasers and light emitting diodes and wave guides interconnecting such devices.
    Type: Grant
    Filed: January 28, 1985
    Date of Patent: July 7, 1987
    Assignee: Stauffer Chemical Company
    Inventor: Diego J. Olego