Abstract: A gate driver comprises an input terminal, an output terminal, and first logic configured to generate an output drive signal at the output terminal corresponding to an input drive signal received at the input terminal. A blanking unit is configured to connect a current sense terminal of the gate driver to a reference supply terminal responsive to a low value of the output drive signal and disconnect the current sense terminal from the reference supply terminal after a predetermined delay period responsive to a high value of the output drive signal.

Abstract: A gate driver circuit for driving a power switch includes a gate driver having a first input for receiving an input signal and an output coupled to the power switch, the gate driver providing a primary gate current and an auxiliary gate current, and a differential voltage sensor having a first input for receiving the input signal, a second input coupled to a power supply voltage, a third input coupled to a terminal of the power switch, and an output coupled to a second input of the gate driver.

Abstract: A semiconductor device in one embodiment includes a depletion junction, a peripheral region adjacent the depletion junction, and a buffer layer. The buffer layer is adapted to reduce localization of avalanche breakdown proximate the interface between the depletion junction and the peripheral region.

Abstract: A semiconductor device in one embodiment includes a depletion junction, a peripheral region adjacent the depletion junction, and a buffer layer. The buffer layer is adapted to reduce localization of avalanche breakdown proximate the interface between the depletion junction and the peripheral region.

Abstract: A semiconductor device in one embodiment includes a depletion junction, a peripheral region adjacent the depletion junction, and a buffer layer. The buffer layer is adapted to reduce localization of avalanche breakdown proximate the interface between the depletion junction and the peripheral region.

Abstract: An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device.