Abstract: Method and apparatus are disclosed for checking the resistance of antifuse elements in an integrated circuit. A voltage based on the resistance of an antifuse element is compared to a voltage based on a known resistance, and an output signal is generated whose binary value indicates whether the resistance of the antifuse element is higher or lower than the known value of resistance. The method and apparatus are useful in verifying the programming of antifuse elements.

Abstract: Method and apparatus are disclosed for checking the resistance of antifuse elements in an integrated circuit. A voltage based on the resistance of an antifuse element is compared to a voltage based on a known resistance, and an output signal is generated whose binary value indicates whether the resistance of the antifuse element is higher or lower than the known value of resistance. The method and apparatus are useful in verifying the programming of antifuse elements.

Abstract: An integrated circuit memory device has a plurality of nonvolatile programmable elements which are used to store a pass/fail status bit at selected milestones in a test sequence. At selected points in the test process an element may be programmed to indicate that the device has passed the tests associated with the selected point in the process. Prior to performing further tests on the device, the element is read to verify that it passed previous tests in the test process. If the appropriate elements are not programmed, the device is rejected. A rejected device may be retested according to the previous test steps. Laser fuses, electrically programmable fuses or antifuses are used to store test results. The use of electrically writeable nonvolatile memory elements allows for programming of the elements after the device has been packaged.

Abstract: An integrated circuit memory device has a plurality of nonvolatile programmable elements which are used to store a pass/fail status bit at selected milestones in a test sequence. At selected points in the test process an element may be programmed to indicate that the device has passed the tests associated with the selected point in the process. Prior to performing further tests on the device, the element is read to verify that it passed previous tests in the test process. If the appropriate elements are not programmed, the device is rejected. A rejected device may be retested according to the previous test steps. Laser fuses, electrically programmable fuses or antifuses are used to store test results. The use of electrically writeable nonvolatile memory elements allows for programming of the elements after the device has been packaged.

Abstract: An integrated circuit memory device has a plurality of nonvolatile programmable elements which are used to store a pass/fail status bit at selected milestones in a test sequence. At selected points in the test process an element may be programmed to indicate that the device has passed the tests associated with the selected point in the process. Prior to performing further tests on the device, the element is read to verify that it passed previous tests in the test process. If the appropriate elements are not programmed, the device is rejected. A rejected device may be retested according to the previous test steps. Laser fuses, electrically programmable fuses or antifuses are used to store test results. The use of electrically writeable nonvolatile memory elements allows for programming of the elements after the device has been packaged.

Abstract: Method and apparatus are disclosed for checking the resistance of antifuse elements in an integrated circuit. A voltage based on the resistance of an antifuse element is compared to a voltage based on a known resistance, and an output signal is generated whose binary value indicates whether the resistance of the antifuse element is higher or lower than the known value of resistance. The method and apparatus are useful in verifying the programming of antifuse elements.

Abstract: Method and apparatus are disclosed for reducing antifuse programming time by connecting the programming voltage to the electrode of the antifuse element that has roughened polysilicon.

Abstract: Method and apparatus are disclosed for checking the resistance of programmable circuits in an integrated circuit where each programmable circuit includes a programmable element, such as an antifuse. A precharged node is connected to the programmable element and the voltage at the node discharges based on the resistance of the programmable element. An output signal is produced whose binary value is based on the voltage at the node after a sufficient time has elapsed to allow the initial voltage to discharge based on the resistance of the programmable element.