Abstract: Carrier wafers are used to hold thin and ultra-thin substrates such as semiconductor components, for example. The carrier wafer of the invention has a plurality of electrodes insulated on all sides (floating electrodes). This plurality of floating electrodes, but at least 50 floating electrodes, are located next to one another with reference to the plane of the first surface of the carrier wafer. Each of these floating electrodes can be charged, for example by means of Fowler-Nordheim tunnels or by the injection of hot charge carriers, in particular of hot electrons or hot holes. Also provided are a method for holding a flexible substrate by means of a carrier wafer of this type and a method for the manufacture of a carrier wafer of this type.

Abstract: The invention relates to a method in which a layer compound having a substrate having an adhesive layer applied thereon at least in regions is provided. An opening extending through the substrate and through the adhesive layer is introduced therein in order to obtain a patterned layer compound. A microchip having an active region arranged on the outside of the chip is provided, wherein the active region is a sensor area or a radiation coupling-out area. In addition, in accordance with the invention, the microchip is arranged on the adhesive layer of the patterned layer compound such that the active region is exposed through the opening.

Abstract: Carrier wafers are used to hold thin and ultra-thin substrates such as semiconductor components, for example. The carrier wafer of the invention has a plurality of electrodes insulated on all sides (floating electrodes). This plurality of floating electrodes, but at least 50 floating electrodes, are located next to one another with reference to the plane of the first surface of the carrier wafer. Each of these floating electrodes can be charged, for example by means of Fowler-Nordheim tunnels or by the injection of hot charge carriers, in particular of hot electrons or hot holes. Also provided are a method for holding a flexible substrate by means of a carrier wafer of this type and a method for the manufacture of a carrier wafer of this type.

Abstract: The present invention relates to a bipolar carrier wafer and a mobile, bipolar electrostatic wafer arrangement. Carrier wafers and wafer arrangements of this type can be used in particular in the field of handling technology of semiconductor wafers. The carrier wafer according to the invention serves for mounting a disc-shaped semiconductor component. It has a first surface (2a) as front-side and a second surface (2b) which is situated opposite the first surface (2a) as rear-side. The carrier wafer is configured such that it has a carrier layer (2), an electrically insulating cover layer (3) which surrounds the carrier layer and an electrically conductive layer (4), the latter being disposed on the electrically insulating cover layer and being structured in at least two regions which are separated from each other electrically as electrodes.

Abstract: The present invention relates to a bipolar carrier wafer and a mobile, bipolar electrostatic wafer arrangement. Carrier wafers and wafer arrangements of this type can be used in particular in the field of handling technology of semiconductor wafers. The carrier wafer according to the invention serves for mounting a disc-shaped semiconductor component. It has a first surface (2a) as front-side and a second surface (2b) which is situated opposite the first surface (2a) as rear-side. The carrier wafer is configured such that it has a carrier layer (2), an electrically insulating cover layer (3) which surrounds the carrier layer and an electrically conductive layer (4), the latter being disposed on the electrically insulating cover layer and being structured in at least two regions which are separated from each other electrically as electrodes.

Abstract: The present invention relates to a carrier wafer with a flat substrate with a top side and a bottom side, a first layer sequence on the top side of the substrate, arranged with area parallel to the substrate and with at least one isolating layer, and at least one flat, conductive electrode arranged on the first layer sequence with area parallel to the substrate, whereby, everywhere that it is not in contact with the first layer sequence, the at least one electrode is surrounded by a second layer sequence having at least one layer made of an isolating material.

Abstract: In a method of producing a micro-electromechanical element a first intermediate layer, which is applied to a first main surface of a first semiconductor wafer, is structured in a first step so as to produce a recess. The first semiconductor wafer is connected via the first intermediate layer to a second semiconductor wafer in such a way that a hermetically sealed cavity is defined by the recess. When one of the wafers has been thinned from a surface facing away from said first intermediate layer so as to produce a diaphragm-like structure on top of the cavity, electronic components are produced in said thinned semiconductor wafer making use of standard semiconductor processes. At least one further intermediate layer between the two semiconductor wafers is provided, which, prior to the connection of the two semiconductor wafers, is structured in such a way that the structure formed in said at least one further intermediate layer and the recess in said first intermediate layer define the cavity.

Abstract: In a method of producing a micromechanical structure for a micro-electromechanical element, a first intermediate layer, which is applied to a first main surface of a first semiconductor wafer, is structured in a first step so as to produce a recess. The first semiconductor wafer is then connected via the first intermediate layer to a second semiconductor wafer in such a way that a hermetically sealed cavity is defined by the recess. Finally, one of the wafers is thinned from a surface facing away from said first intermediate layer so as to produce a diaphragm-like structure on top of the cavity. At least one further intermediate layer is provided between the two semiconductor wavers which, prior to the connection of the two semiconductor wafers, is structured in such a way that the structure formed in said at least one further intermediate layer and the recess in said first intermediate layer define the cavity.

Abstract: The invention relates to a method of producing calibration structures in semiconductor substrates in the manufacture of components, specifically micro-mechanical systems with integrated semiconductor electronic systems. In the method a first layer (3) is structured on a first substrate (4, 5, 6) to produce first areas (2) which are required for the function of the components. Moreover, second areas (1) are produced in the first layer (3), which represent the calibration structures. The second areas (1) present a refractive index different from the refractive index of adjoining areas. Subsequently, the first substrate (4, 5, 6) is joined with a second substrate (12) such that the first layer (3) will be enclosed between the two substrates. Then either the first or the second substrate is thinned down to a residual thickness. The substrate layer with this residual thickness constitutes, for instance, the membrane in a pressure sensor.

Abstract: In a process for the thin etching of substrates which are adapted to be etched by chemical etching agents, a predeterminable substrate layer thickness is obtained with an unaffected single-crystal grid structure of the substrate in that the substrate is irradiated during the etching process by means of a radiation source whose radiation impinges substantially perpendicularly to the substrate surface, the substrate consists of a radiation-absorbent material and the wavelength of the main component of the radiation is chosen such that the absorption length of the radiation of this wavelength in this substrate material is greater than the desired substrate layer thickness.

Abstract: Gears with a flat drive part provided with a circular guide groove eccentric to the axis of rotation. A flat driven part provided with an endless guide groove centered on the axis of rotation on a face toward the drive part, for guidance of balls transmitting force arranged in radial guide slots in a flange fixed to an outer casing between the driven and drive part. The radial guides hole cover the eccentric deflection of the drive part ball guide groove whereby the balls are secured against rotation around the axis of rotation of the gear. In multiple gears, driven disks corresponding to the number of speeds are provided. A hollow shaft protrudes through the driven disks and contains ball pans to receive balls that may be moved into the associated driven part. A cam slide with cam beads is guided in the hollow shaft. Axial displacement of the cam slide always establishes a rotationally fixed connection between a driven disk and the hollow shaft.