Abstract: A housing for high-power semiconductor components is disclosed. The housing consists of an insulator which forms the lateral boundary of the housing, a high-power semiconductor component which is bounded on either side by intermediate disks formed of tungsten or molybdenum, and outer disks formed of copper. The insulator and outer disks are connected by connecting members which may be coated with a protective layer and which surround a protective ring made of a high temperature material such as a ceramic or temperature resistant plastic. The tungsten or molybdenum intermediate disks have a higher total specific energy absorption capacity than does copper.

Abstract: The invention concerns a method for the construction of a sealed disc cell housing for a disc shaped semiconductor body (1), which consists, essentially, of a hollow-cylindrical insulation housing (9) and two pressure contact bodies (4). The latter are provided with seal rings (12) comprising tubing sections of a plastic material which has been treated by electron irradiation and is expandable by heating. The contact bodies (4) are inserted into the insulation housing (9) and the seal ring (12) heated, whereby the wall thickness of the tubing sections (12) increases seal the gap between the pressure contact bodies (4) and the insulation housing (9).

Abstract: Controlled power semiconductor component, having a disc-shaped silicon body with a surface on each side thereof, two insulated ductile electrodes each having surfaces on each side thereof, one of the surfaces of each of the ductile electrodes being in pressure contact with one of the surfaces of the silicon body, two pressure-contact discs each having an edge, and a surface on one side thereof in pressure contact with the other of the surfaces of the ductile electrodes, at least one control electrode connection disposed at a respective ductile electrode and contact disc on one of the sides of the silicon body, a bipartite annular cage divided along its diameter and having two polygonal recesses formed therein forming polygonal surfaces on the cage, and two inner flanges integral with the cage and bordering the recesses the flanges being disposed one above the other in axial direction of the silicon body, the polygonal surfaces on the cage formed by the recesses being tensionally connected to the edges of the

Abstract: A method for the production of a disk-shaped silicon semiconductor component with at least two adjoining zones of opposite type conductivity and different doping strengths using a lapping disk which includes the steps of positioning and semi-conductor component adjacent the lapping disk, subjecting the semiconductor disk to a suction pressure on its side opposite the lapping disk so as to be bowed up from an initial lapping plane with a radius of curvature corresponding to a desired angle, lapping the semiconductor disk with the rotating lapping disk and beveling off the bounding surface of the semiconductor disk opposite the plane of a pn-junction separating the two zones.

Abstract: A high-power semiconductor assembly of the disk-cell construction has an insulating housing and exhibits electrical and thermal pressure-contacting of the semiconductor chip. At least two zones of different conduction types are provided within the chip and the same is clamped, in an essentially doubly symmetrical arrangement with respect to the mid-plane of the chip and the central axis perpendicular thereto, with the interposition of pressure plates, heat-conducting paste, and electrodes, particularly cup-shaped electrodes with their open sides disposed away from the main surfaces of the semiconductor chip, and between two terminal electrodes serving as heat sinks.