Abstract: A method for joining studs to workpieces, in particular for the purpose of stud welding, comprising the steps of acquiring a distinguishing dimension of a stud to be joined by the application of a sensing element to the stud and through measurement of a travel distance of the sensing element as it is applied to the stud; and then joining the stud to a workpiece, if the dimension of the stud is within an allowable tolerance range, and the allowable tolerance range is adapted in dependence on the travel distance of the sensing element measured during a preceding method step.

Abstract: The disclosure relates to a process for the preparation of the enantiomeric forms of 2,3-diaminopropionic acid derivatives of formula I, wherein R1, R2 and R3 are defined as in the disclosure, by racemate resolution. The separation of the racemate into its enantiomers takes place through formation of diastereomeric salts upon addition of an enantiomerically pure auxiliary, and subsequent separation by fractional crystallization.

Abstract: The disclosure relates to a process for the preparation of the enantiomeric forms of 2,3-diaminopropionic acid derivatives of formula I, wherein R1, R2 and R3 are defined as in the disclosure, by racemate resolution. The separation of the racemate into its enantiomers takes place through formation of diastereomeric salts upon addition of an enantiomerically pure auxiliary, and subsequent separation by fractional crystallization.

Abstract: The disclosure relates to a process for the preparation of the enantiomeric forms of 2,3-diaminopropionic acid derivatives of formula I, wherein R1, R2 and R3 are defined as in the disclosure, by racemate resolution. The separation of the racemate into its enantiomers takes place through formation of diastereomeric salts upon addition of an enantiomerically pure auxiliary, and subsequent separation by fractional crystallization.

Abstract: The present invention relates to a holding device for studs having a radially projecting flange section. The holding device comprises a collet component having a clamping section and a hollow insertion section. The clamping section is formed by clamping surfaces which are provided at the free ends of a plurality of clamping arms designed to exert a radially inwardly directed clamping force for clamping the stud in place. A securing device is arranged on the insertion section and is designed in such a way that a flange section of a stud directed past the securing device is mounted in a securing position between the securing device and the clamping section. The clamping arms are of the same length and at least two of the clamping arms each have, as a securing device, a radially inwardly directed securing lug.

Abstract: A method for joining studs to workpieces, in particular for the purpose of stud welding, comprising the steps of acquiring a distinguishing dimension of a stud to be joined by the application of a sensing element to the stud and through measurement of a travel distance of the sensing element as it is applied to the stud; and then joining the stud to a workpiece, if the dimension of the stud is within an allowable tolerance range, and the allowable tolerance range is adapted in dependence on the travel distance of the sensing element measured during a preceding method step.

Abstract: The present invention relates to a holding device for studs having a radially projecting flange section. The holding device comprises a collet component having a clamping section and a hollow insertion section. The clamping section is formed by clamping surfaces which are provided at the free ends of a plurality of clamping arms designed to exert a radially inwardly directed clamping force for clamping the stud in place. A securing device is arranged on the insertion section and is designed in such a way that a flange section of a stud directed past the securing device is mounted in a securing position between the securing device and the clamping section. The clamping arms are of the same length and at least two of the clamping arms each have, as a securing device, a radially inwardly directed securing lug.

Abstract: This invention is directed to processes for the preparation of a compound of the formula I or salt thereof, that is useful as a tryptase inhibitor, to intermediates useful in the preparation of such a compound, to processes for the preparation of such intermediates, and to the use of such intermediates for the preparation of such a compound.

Abstract: The invention therefore relates to the compound of the formula I or a pharmaceutically acceptable salt thereof, its pharmaceutically composition and uses.

Abstract: An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume of the silicon layer. The SOI wafers may be prepared by Czochralski silicon single crystal growth, the condition v/G<(v/G)crit=1.3×10?3 cm2/(K·min) being fulfilled at the crystallization front over the entire crystal cross section, with the result that an excess of interstitial silicon atoms prevails in the silicon single crystal produced; separation of at least one donor wafer from this silicon single crystal, bonding of the donor wafer to a carrier wafer, and reduction of the thickness of the donor wafer, with the result that a silicon layer having a thickness of less than 500 nm bonded to the carrier wafer remains.

Abstract: This invention is directed to processes for the preparation of a compound of the formula I or salt thereof, that is useful as a tryptase inhibitor, to intermediates useful in the preparation of such a compound, to processes for the preparation of such intermediates, and to the use of such intermediates for the preparation of such a compound.

Abstract: An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume of the silicon layer. The SOI wafers may be prepared by Czochralski silicon single crystal growth, the condition v/G<(v/G)crit=1.3×10?3 cm2/(K·min) being fulfilled at the crystallization front over the entire crystal cross section, with the result that an excess of interstitial silicon atoms prevails in the silicon single crystal produced; separation of at least one donor wafer from this silicon single crystal, bonding of the donor wafer to a carrier wafer, and reduction of the thickness of the donor wafer, with the result that a silicon layer having a thickness of less than 500 nm bonded to the carrier wafer remains.

Abstract: A method for the production of a semiconductor wafer having a front and a back and an epitaxial layer of semiconductor material deposited on the front, includes the following process steps: (a) preparing a substrate wafer having a polished front and a specific thickness; (b) pretreating the front of the substrate wafer in the presence of HCl gas and a silane source at a temperature of from 950 to 1250 degrees Celsius in an epitaxy reactor, the thickness of the substrate wafer remaining substantially unchanged; and (c) depositing the epitaxial layer on the front of the pretreated substrate wafer.

Abstract: A method for the production of a semiconductor wafer having a front and a back and an epitaxial layer of semiconductor material deposited on the front, includes the following process steps:

Abstract: The invention relates to a reproducible standard for calibrating and checking the bright-field channel of a surface inspection device used for examining the flat surface of a sample and to a method for producing said standard whereby a microstructure is produced on a surface of a substrate provided as a standard, characterized in that the microstructure is smoothed out.

Abstract: A process for producing a silicon single crystal has the crystal being pulled using the Czochralski method while being doped with oxygen and nitrogen. The single crystal is doped with oxygen at a concentration of less than 6.5*1017 atoms cm−3 and with nitrogen at a concentration of more than 5*1013 atoms cm−3 while the single crystal is being pulled. Another process is for producing a single crystal from a silicon melt, in which the single crystal is doped with nitrogen and the single crystal is pulled at a rate V, an axial temperature gradient G(r) being set up at the interface of the single crystal and the melt, in which the ratio V/G(r) in the radial direction is at least partially less than 1.3*10−3cm2min−1 K−1.

Abstract: A method for producing a silicon monocrystal has a growing monocrystal kept for a specified dwell time in the specified temperature range of from 850.degree. C. to 1100.degree. C. This dwell time for the growing monocrystal in the chosen temperature range is either greater than 250 min or less than 80 min. A device and a method, in which the cooling rate of the growing monocrystal is to be influenced, has a heat shield which is subdivided into adjacent annular zones between a lower rim and an upper rim. These adjacent zones differ in regard to each's thermal conduction and transparency to heat radiation.

Abstract: Fur skin production process comprising treating skins at a stage of processing when they contain 30-80 weight water by immersion in or contact with an organic liquid carrier medium which is water immiscible and not very volatile and contains tanning or further process step chemicals. After tanning or further process steps most of the carrier is removed by centrifuging, squeezing or other physical force process carried out substantially at ambient temperature with little or no heat input. Such processing affords advantages of reduced health hazards and apparatus problems (by avoiding solvent use), reduction of fat liquor and/or kicking oil requirements, reduction of matting on fine wolled skins and avoidance of the need to reverse the skins repeatedly (of skins worked in the round).

Abstract: A device for generating a suction force between a vehicle and a surface having a hood connected to the vehicle. The hood is positioned between the vehicle and the surface, and has an opening defined in a direction towards the surface. A bladed wheel is accommodated within the opening of the hood, and means are provided to drive the bladed wheel.

Abstract: Tanning and pickling of leather and fur skins are conducted at selected water content ranges (50-80 weight percent for leather, 30-80 for skin) established by partial water removal; in water-immiscible organic solvent media, preferrably halogenated hydrocarbons, to produce end products (after such further finishing steps as post-tanning, dyeing, fatliquoring and coating) which are equal to or better in quality than products tanned conventionally in aqueous media while avoiding the pollution or pollution-related economic problems of aqueous media.