Abstract: A photo-electric sensor comprised of a wafer of semiconductor material with a first plurality of photodetectors integral with its rear surface, its front surface being an electrode comprised of a transparent layer of electrically conductive material, has those detectors so spaced apart from each other that the total array can be sampled by a second plurality of charge coupled device multiplexers, each of which multiplexers has its input terminals spaced closer together than are the photodetectors. Each multiplexer input terminal is mechanically and electrically coupled to a photodetector through metallic leads and columns, such leads and columns being so configured as to preclude obtrusion of multiplexer structure into space outside the wafer's lateral extremities, which results in no "dead" space in a focal plane consisting of either one sensor or a plurality thereof abutting each other.

Abstract: A multi-element imager device (MEID) utilizes a plurality of radiation sensitive imager chips fixed to a stratum of transparent material, said stratum supporting buses and other conductors as well as associated electronics are arranged so that dead space in the image plane is minimal, the device being highly reliable and readily producible.

Abstract: A method of producing semiconductor photodiodes of indium antimonide, by growing an indium antimonide epitaxial layer of one type conductivity onto a substrate of indium antimonide of another type conductivity, utilizing conventional vapor phase or liquid phase epitaxial techniques, wherein the antimony in the epitaxial layer is partially replaced by either arsenic or phosphorus, thus resulting in a high performing photoelectric device.