Abstract: A test configuration for the functional testing of a semiconductor chip is described. The semiconductor chip, which can be subjected to a functional test for the purpose of checking the functionality of the semiconductor chip, is disposed on a support material. The semiconductor chip contains a self-test unit for generating test information and for carrying out the functional test. An energy source serves for providing an electrical energy supply from energy that is fed in contactlessly. The energy source is disposed on the support material and is connected to the semiconductor chip for the purpose of providing an energy supply on the semiconductor chip. The test configuration makes it possible to carry out a contactless functional test and to reduce the test costs by virtue of high parallelism during the functional test of a plurality of semiconductor chips.

Abstract: A test configuration for the functional testing of a semiconductor chip is described. The semiconductor chip, which can be subjected to a functional test for the purpose of checking the functionality of the semiconductor chip, is disposed on a support material. The semiconductor chip contains a self-test unit for generating test information and for carrying out the functional test. An energy source serves for providing an electrical energy supply from energy that is fed in contactlessly. The energy source is disposed on the support material and is connected to the semiconductor chip for the purpose of providing an energy supply on the semiconductor chip. The test configuration makes it possible to carry out a contactless functional test and to reduce the test costs by virtue of high parallelism during the functional test of a plurality of semiconductor chips.

Abstract: A terminal assembly for an integrated semiconductor circuit includes a semiconductor chip in the semiconductor circuit having a surface, end faces, an electrically active chip surface regions of the surface adjacent the end faces, electric circuits of the semiconductor chip within the electrically active chip surface defining at least one given area of the surface within the electrically active chip surface being free of electric circuits, contact pads disposed in the regions of the surface adjacent the end faces for electrically connecting the semiconductor circuit to electrical signals and/or potentials, and other contact pads disposed in the at least one given area between the regions of the surface adjacent the end faces for electrical connection to at least some of the electrical signals and/or potentials.

Abstract: A method of operating a semiconductor memory with a facility for performing integrated parallel testing, wherein the semiconductor memory is subdivided into n identical cell fields with addressable storage cells, each of the storage cells of each of the cell fields being addressable within a storage cycle simultaneously with, respectively, one storage cell of each of the other cell fields, wherein during a testing operation of the semiconductor memory, the storage cell of one of the n cell fields addressed for the purpose of reading out (read cycle) of a stored test datum has, due to a writing-in process, the same stored test datum as each of the other addressed storage cells addressed in the same read cycle in the case ("go" case) wherein the semiconductor memory is in order, which comprises, within the semiconductor memory, in the testing operation, simultaneously comparing within a read cycle, the test data read out from each of the storage cells addressed within the read cycle of the respective n cell fie

Abstract: An integrated write/read memory consisting of a matrix of normal memory cells organized in rows and columns. The memory further includes a smaller matrix of redundant memory cells having their own column and row address decoders that can be engaged to replace any faulty memory cells in the normal matrix. The redundant address decoders are connected to all the address lines by means of fusible links so that any redundant address gate can be programmed to emulate the address of a faulty memory cell. The system further includes logic controls that automatically disables any normal memory address if a redundant memory cell is programmed to take its place.

Abstract: Integrated semiconductor circuit with a dynamic read-write memory having a memory matrix composed of identical memory cells addressable via row and column decoders with respect to the individual memory cells, the addressing of the individual matrix rows being initiated by a row address strobe while the addressing of the individual matrix columns is initiated by a column address strobe, the addressing being such that during read-out, simultaneously, the information contents of at least two of the memory cells intended for data storage is processed and temporarily stored in an interim register, and including, in addition, a shift register exclusively operated by the column address strobe for the serial transmission of the information contents simultaneously obtained from the memory matrix to the data output of the memory, including means for controlling the data output of the memory via the column address strobe so that the information present at the data output of the memory and made available by the shift reg

Abstract: A semiconductor circuit assembly having capacitively controlled field effect transistors, includes a semiconductor chip containing a digital circuit part for supplying timing pulses for controlling operation of the digital circuit part, and terminal having at least one conductive connection to the digital circuit part and the timing pulse generator for supplying potentials thereto from a direct current source. An oscillator is provided and a substrate-bias generator connected to the oscillator and the timing pulse generator. The substrate-bias generator is controlled by the oscillator for producing a bias voltage able to reach a given full value and for activating the timing pulse generator only after the substrate bias voltage has reached its full value.

Abstract: Monolithically integrated semiconductor memory having a matrix formed of identical information storage cells arranged in rows and columns in the form of single-transistor storage cells, a respective comparator and a dummy cell, likewise provided by a single-transistor storage cell, being operatively associated either with each matrix column or each matrix row, including a respective second single-transistor storage cell provided as a charge equalization cell and identical, at least with respect to storage capacity with the dummy cell and operatively associated with each of the dummy cells, each of the charge equalization cells respectively having a drive balanced relative to the drive of the dummy cell operatively associated therewith so that, in a first phase triggered by the respective dummy cell having been addressed by an addressing signal, the dummy cell storage capacity is charged and the charging state of the storage capacity of the respective charge equalization cell is set so that the charging state