Abstract: A linear motor stator arrangement including a coil arrangement with conductive electrical coils arranged along an axis for generating a magnetic field, a convective cooling device with a fluid line extending along a pathway, a section of the fluid line exhibits as a cooling section outlet ports in a fluid line wall which faces the coil arrangement and are arranged along the pathway with a spacing therebetween, the stator arrangement having a conveyor device which is connected with the fluid line and for conveying a fluid in the fluid line and through the outlet ports to the coil arrangement, wherein the cooling section there are provided along the pathway outlet ports with quantitatively different outlet port cross-sections through which fluid can flow and/or the spacings between two outlet ports arranged immediately one after another along the pathway in different regions of the cooling section along the pathway are quantitatively different.

Abstract: A linear motor stator arrangement comprising a coil arrangement with a plurality of conductive electrical coils arranged following one another along a sequence axis for generating a temporally and spatially varying magnetic field in the neighborhood of the coil arrangement, and further comprising a convective cooling device which exhibits a fluid line extending along a pathway, of which at least one section runs alongside the coil arrangement at a spacing from it, where a section of the fluid line running alongside the coil arrangement exhibits as a cooling section a large number of outlet ports in a fluid line wall which face towards the coil arrangement and are arranged one after another along the pathway at a spacing from one another, where the stator arrangement further comprises a conveyor device which is connected with the fluid line and is configured for conveying a fluid in the fluid line and through the outlet ports to the coil arrangement, where in the cooling section there are provided along the pa

Abstract: A hand-held machine tool is provided. The hand-held machine tool includes a striking element that is accelerated along a working axis, and a guide for the striking element. A cushioning damper limits a motion of the striking element along the working axis and has an elastic damping ring. The damping ring has grooves running on at least one face side radial to the working axis.

Abstract: In order to clean optical components (35) inside an EUV lithography device in a gentle manner, a cleaning module for an EUV lithography device includes a supply line for molecular hydrogen and a heating filament for producing atomic hydrogen and hydrogen ions for cleaning purposes. The cleaning module also has an element, (33) arranged to apply an electric and/or magnetic field, downstream of the heating filament (29) in the direction of flow of the hydrogen (31, 32). The element can be designed as a deflection unit, as a filter unit and/or as an acceleration unit for the ion beam (32).

Abstract: An EUV (extreme ultraviolet) lithography apparatus (1) including: a housing (1a) enclosing an interior (15), at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6) arranged in the interior (15), a vacuum generating unit (1b) generating a residual gas atmosphere in the interior (15), and a residual gas analyzer (18a, 18b) detecting at least one contaminating substance (17a) in the residual gas atmosphere. The residual gas analyzer (18a) has a storage device (21) having an ion trap for storing the contaminating substance (17a). Additionally, a method for detecting at least one contaminating substance by residual gas analysis of a residual gas atmosphere of an EUV lithography apparatus (1) having a housing (1a) having an interior (15), in which at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6), is arranged, wherein the contaminating substance (17a) is stored in a storage device (21) in order to carry out the residual gas analysis.

Abstract: An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device (15) for processing an optical element (6a), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (27), the processing device (15) includes a particle generator (30) for generating a particle beam, in particular an electron beam (30a), and/or a high-frequency generator.

Abstract: A mirror serves for guiding a radiation bundle. The mirror has a basic body and a coating of a reflective surface of the basic body, the coating increasing the reflectivity of the mirror. A heat dissipating device serves for dissipating heat deposited in the coating. The heat dissipating device has at least one Peltier element. The coating is applied directly on the Peltier element. A temperature setting apparatus has at least one temperature sensor for a temperature of the reflective surface. A regulating device of the Temperature setting apparatus can be connected to the at least one Peltier element and is signal-connected to the at least one temperature sensor. The result is a mirror in which a heat dissipating capacity of the heat dissipating device is improved.

Abstract: An optical arrangement, e.g. a projection exposure apparatus (1) for EUV lithography, includes: a housing (2) enclosing an interior space (15); at least one, preferably reflective optical element (4-10, 12, 14.1-14.6) arranged in the housing (2); at least one vacuum generating unit (3) for the interior space (15) of the housing (2); and at least one vacuum housing (18, 18.1-18.10) arranged in the interior space (15) and enclosing at least the optical surface (17, 17.1, 17.2) of the optical element (4-10, 12, 14.1-14.5). A contamination reduction unit is associated with the vacuum housing (18.1-18.10) and reduces the partial pressure of contaminating substances, in particular of water and/or hydrocarbons, at least in close proximity to the optical surface (17, 17.1, 17.2) in relation to the partial pressure of the contaminating substances in the interior space (15).

Abstract: An optical arrangement, e.g. a projection exposure apparatus (1) for EUV lithography, includes: a housing (2) enclosing an interior space (15); at least one, preferably reflective optical element (4-10, 12, 14.1-14.6) arranged in the housing (2); at least one vacuum generating unit (3) for the interior space (15) of the housing (2); and at least one vacuum housing (18, 18.1-18.10) arranged in the interior space (15) and enclosing at least the optical surface (17, 17.1, 17.2) of the optical element (4-10, 12, 14.1-14.5). A contamination reduction unit is associated with the vacuum housing (18.1-18.10) and reduces the partial pressure of contaminating substances, in particular of water and/or hydrocarbons, at least in close proximity to the optical surface (17, 17.1, 17.2) in relation to the partial pressure of the contaminating substances in the interior space (15).

Abstract: A hand-held machine tool is provided. The hand-held machine tool includes a striking element that is accelerated along a working axis, and a guide for the striking element. A cushioning damper limits a motion of the striking element along the working axis and has an elastic damping ring. The damping ring has grooves running on at least one face side radial to the working axis.

Abstract: A method for preventing contaminating gaseous substances (18) from passing through an opening (17b) in a housing (4a) of an EUV lithography apparatus (1), wherein at least one optical element for guiding EUV radiation (6) is arranged in the housing (4a). The method involves: generating at least one gas flow (21a, 21b) which deflects the contaminating substances (18, 18?), and in particular is directed counter to the flow direction (Z) thereof, in the region of the opening (17b). The gas flow (21a, 21b) and the EUV radiation (6) are generated in pulsed fashion and the pulse rate of the gas flow (21a, 21b) is defined in a manner dependent on the pulse rate of the contaminating substances (18, 18?) released under the action of the pulsed EUV radiation (6), wherein both pulse rates are preferably equal in magnitude, and wherein, in the region of the opening (17b), the gas pulses temporally overlap the pulses of the contaminating substances (18, 18?).

Abstract: An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device (15) for processing an optical element (6a), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (27), the processing device (15) comprises a particle generator (30) for generating a particle beam, in particular an electron beam (30a), and/or a high-frequency generator.

Abstract: The invention relates to an EUV lithography apparatus with at least one EUV-reflective optical surface and a cavity ringdown reflectometer adapted to determine the contamination status of the EUV-reflective optical surface for at least one contaminating substance by determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (?m). The invention further relates to a method for determining the contamination status of at least one EUV-reflective optical surface arranged in an EUV lithography apparatus for at least one contaminating substance comprising determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (?m) using a cavity ringdown reflectometer.

Abstract: An EUV (extreme ultraviolet) lithography apparatus (1) including: a housing (1a) enclosing an interior (15), at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6) arranged in the interior (15), a vacuum generating unit (1b) generating a residual gas atmosphere in the interior (15), and a residual gas analyzer (18a, 18b) detecting at least one contaminating substance (17a) in the residual gas atmosphere. The residual gas analyzer (18a) has a storage device (21) having an ion trap for storing the contaminating substance (17a). Additionally, a method for detecting at least one contaminating substance by residual gas analysis of a residual gas atmosphere of an EUV lithography apparatus (1) having a housing (1a) having an interior (15), in which at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6), is arranged, wherein the contaminating substance (17a) is stored in a storage device (21) in order to carry out the residual gas analysis.

Abstract: Components (30) in the interior of an EUV lithography device for extreme ultraviolet and soft X-ray wavelength range are cleaned by igniting a plasma, adjacent to the component (30) to be cleaned, using electrodes (29), wherein the electrodes (29) are adapted to the form of the component (30) to be cleaned. The residual gas atmosphere is measured spectroscopically on the basis of the plasma. An emission spectrum is preferably recorded in order to monitor the degree of cleaning. An optical fiber cable (31) with a coupling-in optical unit (32) is advantageously used for this purpose. Moreover, in order to monitor the contamination in the gas phase within the vacuum chambers during the operation of an EUV lithography device, it is proposed to provide modules configured to initiate a gas discharge and to detect radiation emitted on account of the gas discharge. The contamination in the gas phase can be deduced from the analysis of the measured spectrum.

Abstract: A cleaning module for an EUV lithography device with a supply (206) for molecular hydrogen, a heating filament (210) and a line (212) for atomic and/or molecular hydrogen. The line (212) has at least one bend with a bending angle of less than 120 degrees, and has a material on its inner surface which has a low recombination rate for atomic hydrogen. The supply (206) is of flared shape at its end, which faces the heating filament (210). A gentler cleaning of optical elements is achieved with such a cleaning module, or also by exciting a cleaning gas with a cold cathode or a plasma, or by filtering out charged particles via of electrical and/or magnetic fields.

Abstract: In order to clean optical components (35) inside an EUV lithography device in a gentle manner, a cleaning module for an EUV lithography device includes a supply line for molecular hydrogen and a heating filament for producing atomic hydrogen and hydrogen ions for cleaning purposes. The cleaning module also has an element, (33) arranged to apply an electric and/or magnetic field, downstream of the heating filament (29) in the direction of flow of the hydrogen (31, 32). The element can be designed as a deflection unit, as a filter unit and/or as an acceleration unit for the ion beam (32).

Abstract: An electrical hand-held power tool includes an assembly (2) vibrating along a vibration axis (A) during operation of the power tool, at least one, transversely projecting, vibration-decoupled pivotal side handle (3), a manual switch (4) having an actuation element (5) arranged in the side handle (3) and switchingly connectable with at least one sensor switch (8) which is located in the assembly (2) in vicinity of the handle pivot point (G), by a switching rod (7) having a switching element (6) and being pivotally supported on the side handle at a switching pivot point (S) spaced from the handle pivot point (G) and from the vibration axis (A).

Abstract: A mirror serves for guiding a radiation bundle. The mirror has a basic body and a coating of a reflective surface of the basic body, the coating increasing the reflectivity of the mirror. A heat dissipating device serves for dissipating heat deposited in the coating. The heat dissipating device has at least one Peltier element. The coating is applied directly on the Peltier element. A temperature setting apparatus has at least one temperature sensor for a temperature of the reflective surface. A regulating device of the Temperature setting apparatus can be connected to the at least one Peltier element and is signal-connected to the at least one temperature sensor. The result is a mirror in which a heat dissipating capacity of the heat dissipating device is improved.

Abstract: An apparatus and method for measuring an outgassing in a EUV lithography apparatus. The method includes activating a surface within the EUV lithography apparatus, inducing the outgassing, analyzing a residual gas. Defining a maximum partial pressure, recording a mass spectrum of the residual gas, converting the highest-intensity peaks of the mass spectrum into sub-partial pressures, summing the sub-partial pressures, and comparing the summed result with the defined maximum partial pressure. An EUV lithography apparatus includes a residual gas analyzer and a stimulation unit comprised of at least on of an electron source, an ion source, a photon source, and a plasma source. A measurement setup for measuring the outgassing from components by analyzing the residual gas includes a residual gas analyzer, a vacuum chamber, and a stimulation unit comprised of at least on of an electron source, an ion source, a photon source, and a plasma source.