Abstract: The invention relates to a method for producing a selectively absorbing coating on a solar absorber component comprising the steps of: Providing a substrate having a metallic surface, Determining the inner surface of the metallic surface, Determining the charge quantity per unit area required for producing the absorbing coating according to the inner surface, Electrolytically producing the absorbing coating by direct-current anodising the metallic surface of the substrate, forming a porous oxide layer, and then alternating-current pigmenting the pores of the oxide layer; until the charge quantity per unit area determined for the respective step from the inner surface is reached, wherein the ratio between the charge quantity per unit area for the direct-current anodising and the charge quantity per unit area for the alternating-current pigmenting is 0.65 to 0.8. In addition, the invention relates to a solar absorber component produced according to this method.

Abstract: A method of producing a thin film photovoltaic system (2) having a two-dimensional metal chalcogenide compound semiconductor layer (7) as an absorber of sunlight and a metal layer (8) applied to the metal chalcogenide compound semiconductor layer is provided, wherein the metal chalcogenide compound semiconductor layer (7) and the metal layer (8) form a Schottky contact at their contact face. The method is characterized in that the metal chalcogenide compound semiconductor layer (7) is produced by applying a dispersion containing nanoscale particles having a diameter of about 3 nm to about 30 nm to a transparent substrate material (12), wherein the layer thickness of the metal chalcogenide compound semiconductor layer (7) applied to the substrate material ranges from about 150 nm to about 2500 nm.

Abstract: Solar absorber (1) comprising at least one solar thermal absorber (2) and also at least one solar cell layer system (3) applied thereto and comprising a first layer (10) and a second layer (11) which is directly contact-connected to the first layer (10), wherein the second layer (11) is applied in planar fashion to the solar thermal absorber (2) either directly or indirectly.

Abstract: A method of producing a thin film photovoltaic system (2) having a two-dimensional metal chalcogenide compound semiconductor layer (7) as an absorber of sunlight and a metal layer (8) applied to the metal chalcogenide compound semiconductor layer is provided, wherein the metal chalcogenide compound semiconductor layer (7) and the metal layer (8) form a Schottky contact at their contact face. The method is characterized in that the metal chalcogenide compound semiconductor layer (7) is produced by applying a dispersion containing nanoscale particles having a diameter of about 3 nm to about 30 nm to a transparent substrate material (12), wherein the layer thickness of the metal chalcogenide compound semiconductor layer (7) applied to the substrate material ranges from about 150 nm to about 2500 nm.

Abstract: The invention relates to a reaction cell for the photoelectrochemical production of hydrogen gas, comprising a housing which is filled with an aqueous electrolyte, a pair of electrodes consisting of a first electrode of a doped conductor which is immersed in the electrolytes and a second electrode which is made of metal and which is immersed in the electrolytes and which is electrically conductively connected to the first electrode, also comprising a light source which illuminates the pair of electrodes. The reaction cell is characterized in that the electrodes are connected to each other in a flat manner, the pair of electrodes divides the reaction cell into two chambers, wherein the chambers are connected to each other in a fluidically conducting manner and the housing is provided with at least one gas outlet.