Patents by Inventor Dieter Streb

Dieter Streb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7208829
    Abstract: A semiconductor component that is able to be produced simply, quickly, and yet reliably and that usable for power applications, and including a semiconductor chip, a lower, first main electrode layer formed on a first side of the semiconductor chip, a lower control electrode layer formed on the first side, an insulation layer formed on the first side between the lower first main electrode layer and the lower control electrode layer and which partly covers the lower first main electrode layer, an upper first main electrode layer which is formed on the lower first main electrode layer, an upper control electrode layer which is formed on the lower control electrode layer and the insulation layer and extends on the insulation layer partially above the lower first main electrode layer, and a second main electrode layer formed on a second side of the semiconductor chip.
    Type: Grant
    Filed: February 10, 2003
    Date of Patent: April 24, 2007
    Assignee: Robert Bosch GmbH
    Inventors: Henning Hauenstein, Rainer Topp, Jochen Seibold, Dirk Balszunat, Stefan Ernst, Wolfgang Feiler, Thomas Koester, Stefan Hornung, Dieter Streb
  • Publication number: 20060163648
    Abstract: A semiconductor component that is able to be produced simply, quickly, and yet reliably and that usable for power applications, and including a semiconductor chip, a lower, first main electrode layer formed on a first side of the semiconductor chip, a lower control electrode layer formed on the first side, an insulation layer formed on the first side between the lower first main electrode layer and the lower control electrode layer and which partly covers the lower first main electrode layer, an upper first main electrode layer which is formed on the lower first main electrode layer, an upper control electrode layer which is formed on the lower control electrode layer and the insulation layer and extends on the insulation layer partially above the lower first main electrode layer, and a second main electrode layer formed on a second side of the semiconductor chip.
    Type: Application
    Filed: February 10, 2003
    Publication date: July 27, 2006
    Inventors: Henning Hauenstein, Rainer Topp, Jochen Seibold, Dirk Balszunat, Stefan Ernst, Wolfgang Feiler, Thomas Koester, Stefan Hornung, Dieter Streb