Abstract: An embodiment may include an integrated circuit. The integrated circuit may include a plurality of vertical transistor structures arranged in a two-dimensional grid pattern including a longitudinal set of grid-lines, a transversal set of grid-lines, and nodes at each intersection of the longitudinal set of grid-lines and the transversal set of grid-lines. Each vertical transistor structure is arranged substantially perpendicular to the plurality of layers of the integrated circuit and aligned with each node of the two-dimensional grid pattern.

Abstract: An embodiment may include a method of forming a microelectronic device. The method may include forming a pair of transistors stacked vertically and connected in series, each of the pair of transistors are of the same type. The method may include forming a memory element including a first inverter containing a first inverter transistor and an access transistor. The first inverter transistor is connected to a power supply rail. The access transistor is connected to a bitline. The first inverter transistor is a first transistor of the pair of vertically stacked transistors and the access transistor is a second transistor of the pair of vertically stacked transistors. The pair of transistors are arranged substantially perpendicular to the plurality of layers.

Abstract: An embodiment may include a method of forming an integrated circuit. The method may include forming a first pair of transistors stacked vertically above a semiconductor substrate arranged substantially perpendicular to the plurality of layers. Each of the first pair of vertically stacked transistors are of the same type and are connected in series. The method may include forming a second pair of transistors connected in parallel and arranged substantially perpendicular to the plurality of layers. The second pair of transistors are a different type than the first pair of vertically stacked transistors. The method may include forming a power supply rail within the semiconductor substrate and arranged at one end of the first pair of vertically stacked transistors.

Abstract: An embodiment may include a microelectronic device. The microelectronic device may include a first pair of transistors stacked vertically and connected in series. Each of the first pair of transistors are of the same type. The microelectronic device may include a second pair of transistors connected in parallel. The second pair of transistors being a different type than the first pair of transistors. The first pair of transistors and the second pair of transistors are arranged substantially perpendicular to the plurality of layers.

Abstract: An embodiment may include a method of forming a microelectronic device. The method may include forming a pair of transistors stacked vertically and connected in series, each of the pair of transistors are of the same type. The method may include forming a memory element including a first inverter containing a first inverter transistor and an access transistor. The first inverter transistor is connected to a power supply rail. The access transistor is connected to a bitline. The first inverter transistor is a first transistor of the pair of vertically stacked transistors and the access transistor is a second transistor of the pair of vertically stacked transistors. The pair of transistors are arranged substantially perpendicular to the plurality of layers.

Abstract: An embodiment may include an integrated circuit. The integrated circuit may include a plurality of vertical transistor structures arranged in a two-dimensional grid pattern including a longitudinal set of grid-lines, a transversal set of grid-lines, and nodes at each intersection of the longitudinal set of grid-lines and the transversal set of grid-lines. Each vertical transistor structure is arranged substantially perpendicular to the plurality of layers of the integrated circuit and aligned with each node of the two-dimensional grid pattern.

Abstract: An embodiment may include a method of forming an integrated circuit. The method may include forming a first pair of transistors stacked vertically above a semiconductor substrate arranged substantially perpendicular to the plurality of layers. Each of the first pair of vertically stacked transistors are of the same type and are connected in series. The method may include forming a second pair of transistors connected in parallel and arranged substantially perpendicular to the plurality of layers. The second pair of transistors are a different type than the first pair of vertically stacked transistors. The method may include forming a power supply rail within the semiconductor substrate and arranged at one end of the first pair of vertically stacked transistors.

Abstract: An embodiment may include a microelectronic device. The microelectronic device may include a first pair of transistors stacked vertically and connected in series. Each of the first pair of transistors are of the same type. The microelectronic device may include a second pair of transistors connected in parallel. The second pair of transistors being a different type than the first pair of transistors. The first pair of transistors and the second pair of transistors are arranged substantially perpendicular to the plurality of layers.

Abstract: A current sense amplifier is provided. The amplifier comprises a first cross coupled inverter, a second cross coupled inverter, and a transmission gate. The first cross coupled inverter has a first source coupled to sense current input. The second cross coupled inverter has a second source coupled to a reference current input. The transmission gate comprises a first transmission end, a second transmission end, and a gate input. The first transmission end is operatively coupled to a first input of the first cross coupled inverter. The second transmission end is operatively coupled to a second input of the second cross coupled inverter. The gate input is operatively coupled to the control line input. Each cross coupled inverter is configured for switching a coupling of the sense current input and the reference current input.

Abstract: A current sense amplifier is provided. The amplifier comprises a first cross coupled inverter, a second cross coupled inverter, and a transmission gate. The first cross coupled inverter has a first source coupled to sense current input. The second cross coupled inverter has a second source coupled to a reference current input. The transmission gate comprises a first transmission end, a second transmission end, and a gate input. The first transmission end is operatively coupled to a first input of the first cross coupled inverter. The second transmission end is operatively coupled to a second input of the second cross coupled inverter. The gate input is operatively coupled to the control line input. Each cross coupled inverter is configured for switching a coupling of the sense current input and the reference current input.

Abstract: A current sense amplifier is provided. The amplifier comprises a first cross coupled inverter, a second cross coupled inverter, and a transmission gate. The first cross coupled inverter has a first source coupled to sense current input. The second cross coupled inverter has a second source coupled to a reference current input. The transmission gate comprises a first transmission end, a second transmission end, and a gate input. The first transmission end is operatively coupled to a first input of the first cross coupled inverter. The second transmission end is operatively coupled to a second input of the second cross coupled inverter. The gate input is operatively coupled to the control line input. Each cross coupled inverter is configured for switching a coupling of the sense current input and the reference current input.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A method includes selectively degrading a current capacity of a first finned-field-effect-transistor (finFET) relative to a second finFET by forming a material on a fin of the first finFET to increase a current resistance of the first finFET. The second finFET is electrically connected to the first finFET in a circuit such that a current flow through the second finFET is a multiple of a current flow through the first finFET.

Abstract: A method includes selectively degrading a current capacity of a first finned-field-effect-transistor (finFET) relative to a second finFET by forming a material on a fin of the first finFET to increase a current resistance of the first finFET. The second finFET is electrically connected to the first finFET in a circuit such that a current flow through the second finFET is a multiple of a current flow through the first finFET.

Abstract: A current sense amplifier is provided. The amplifier comprises a first cross coupled inverter, a second cross coupled inverter, and a transmission gate. The first cross coupled inverter has a first source coupled to sense current input. The second cross coupled inverter has a second source coupled to a reference current input. The transmission gate comprises a first transmission end, a second transmission end, and a gate input. The first transmission end is operatively coupled to a first input of the first cross coupled inverter. The second transmission end is operatively coupled to a second input of the second cross coupled inverter. The gate input is operatively coupled to the control line input. Each cross coupled inverter is configured for switching a coupling of the sense current input and the reference current input.

Abstract: A current sense amplifier is provided comprising a reference current input terminal, a control line input terminal, a sense current input terminal and a first output terminal. The amplifier further comprises a first NAND gate comprising first and second gate input terminals, and a second output terminal being coupled to the first output terminal of the amplifier. The amplifier also comprises two cross coupled inverters each comprising an n-FET, an n-FET input terminal, and each n-FET having a respective source. The amplifier further comprises a transmission gate comprising two transmission terminals and a gate terminal. The gate terminal is coupled to the control line terminal.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.

Abstract: A memory cell arrangement of SRAM cell groups may be provided in which in each of the groups multiple SRAM cells are connected to an input of a local read amplifier by at least one common local bit-line. Outputs of the amplifiers are connected to a shared global bit-line. The global bit-line is connected to a pre-charge circuit, and the pre-charge circuit is adapted for pre-charging the global bit-line with a programmable pre-charge voltage before reading data. The pre-charge circuit comprises a limiter circuit which comprises a pre-charge regulator circuit connected to the global bit-line to pre-charge the global bit-line with the programmable pre-charge voltage, and an evaluation and translation circuit connected to the pre-charge regulator circuit and the global bit-line to compensate leakage current of the global bit-line without changing its voltage level.