Abstract: The invention relates to an optical spectral sensor for determining the spectral information of incident light, in particular in the visible and infrared spectral range, with at least one optoelectronic semiconductor arrangement and at least one metal film, which is surrounded by a dielectric, wherein the metal film has a periodic pattern, wherein the at least one optoelectronic semiconductor arrangement and the at least one patterned metal film are arranged in such a way that light to be detected initially passes through the patterned metal film and then impinges on the optoelectronic semiconductor arrangement, wherein the optical spectral sensor is formed in such a way that the spectral sensitivity is determined essentially by the optical properties of the patterned metal film.

Abstract: A photosensor for a transmitted-light method for detecting the intensity profile of an optical standing wave, with a transparent substrate, with a semiconductor component, and with at least three contacts, is characterized by the fact that two semiconductor components are connected with each other, such that the first semiconductor component and the second semiconductor component each have a photoelectrically active first semiconductor layer, and such that the two photoelectrically active semiconductor layers have a fixed phase relation to each other, which is adjusted by at least one photoelectrically inactive layer.

Abstract: The invention relates to a Fourier spectrometer (1), for determining spectral information of an incident optical input signal (2) and a method for producing such a Fourier spectrometer. The aim of said invention is to allow the accurate production of a small-sized and compact Fourier spectrometer, by means of which, in particular, both 1D and 2D spectrometer arrays may be produced.

Abstract: A photosensor for a transmitted-light method for detecting the intensity profile of an optical standing wave, with a transparent substrate, with a semiconductor component, and with at least three contacts, is characterized by the fact that two semiconductor components are connected with each other, such that the first semiconductor component and the second semiconductor component each have a photoelectrically active first semiconductor layer, and such that the two photoelectrically active semiconductor layers have a fixed phase relation to each other, which is adjusted by at least one photoelectrically inactive layer.

Abstract: The invention relates to a multicolor sensor with a plurality of diode functions comprising a succession of layers with p and n doped layers. Conductive transparent contact layers are thereby fitted. According to the invention, pin, nip, npin and/or pnip structures can be provided.

Abstract: A multicolor sensor with a plurality of diode functions comprising a succession of layers with p and n doped layers. A microcrystalline layer is thus constructed from at least one of the internal contacts for contacting. According to the invention, pin, nip, npin and/or pnip structures are provided to form the diode functions.

Abstract: A pin or nip layer sequence, especially for use as a color sensor in electrooptical components. The bond gap of a first intrinsic (i) layer closer to the light input side is greater than the bond gap of a second i layer adjacent to the first and further removed from the light input side. The new .mu..tau. product for the i layer furthest distant from the layer is greater than the .mu..tau. product of an i layer closer is the n layer.