Abstract: A process is described for depositing silicon nitride, in which the temperature in a furnace is set to from 600° C. to 645° C. The silicon nitride formed in this way is permeable to small molecules, such as in particular hydrogen molecules, yet nevertheless retains its etching selectivity with respect to silicon dioxide.

Abstract: A method for improving a doping profile using gas phase doping is described. In the method, silicon nitride and/or products of decomposition from a silicon nitride deposition are introduced in a process chamber before or during the actual gas phase doping. This allows the doping profile to be significantly improved.

Abstract: The novel method allows monitoring of nitrogen processes by making use of the fact that the incorporation of nitrogen near the surface in silicon, or in a thin silicon nitride layer on the silicon surface, inhibits the diffusion of oxygen during the subsequent thermal oxidation. Accordingly, the oxidation rate of the thermal oxidation is reduced and the growth of the oxide layer on the silicon surface is inhibited. The thickness of the oxide layer is thus used as a measure for the nitrogen content, i.e., for the quality of the nitrogen process.

Abstract: A method for manufacturing a trench capacitor uses a low-pressure gas phase doping for forming a buried plate as a capacitor plate. The use of the low-pressure gas phase doping reduces process costs and improves capacitor properties.