Patents by Inventor Dietmar Ottenwalder

Dietmar Ottenwalder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for improving a doping profile for gas phase doping
    Patent number: 6645839
    Abstract: A method for improving a doping profile using gas phase doping is described. In the method, silicon nitride and/or products of decomposition from a silicon nitride deposition are introduced in a process chamber before or during the actual gas phase doping. This allows the doping profile to be significantly improved.
    Type: Grant
    Filed: May 6, 2002
    Date of Patent: November 11, 2003
    Assignee: Infineon Technologies AG
    Inventors: Moritz Haupt, Anja Morgenschweis, Dietmar Ottenwälder, Uwe Schröder
  • Method for monitoring nitrogen processes
    Patent number: 6528433
    Abstract: The novel method allows monitoring of nitrogen processes by making use of the fact that the incorporation of nitrogen near the surface in silicon, or in a thin silicon nitride layer on the silicon surface, inhibits the diffusion of oxygen during the subsequent thermal oxidation. Accordingly, the oxidation rate of the thermal oxidation is reduced and the growth of the oxide layer on the silicon surface is inhibited. The thickness of the oxide layer is thus used as a measure for the nitrogen content, i.e., for the quality of the nitrogen process.
    Type: Grant
    Filed: June 14, 2001
    Date of Patent: March 4, 2003
    Assignee: Infineon Technologies AG
    Inventors: Thomas Gärtner, Alexandra Lamprecht, Dietmar Ottenwälder, Jörg Schulze
  • Method for manufacturing a trench capacitor
    Patent number: 6528384
    Abstract: A method for manufacturing a trench capacitor uses a low-pressure gas phase doping for forming a buried plate as a capacitor plate. The use of the low-pressure gas phase doping reduces process costs and improves capacitor properties.
    Type: Grant
    Filed: March 19, 2001
    Date of Patent: March 4, 2003
    Assignee: Infineon Technologies AG
    Inventors: Gustav Beckmann, Moritz Haupt, Anke Krasemann, Alexandra Lamprecht, Dietmar Ottenwälder, Jens-Uwe Sachse, Martin Schrems
  • Method for improving a doping profile for gas phase doping
    Publication number: 20030013283
    Abstract: A method for improving a doping profile using gas phase doping is described. In the method, silicon nitride and/or products of decomposition from a silicon nitride deposition are introduced in a process chamber before or during the actual gas phase doping. This allows the doping profile to be significantly improved.
    Type: Application
    Filed: May 6, 2002
    Publication date: January 16, 2003
    Inventors: Moritz Haupt, Anja Morgenschweis, Dietmar Ottenwalder, Uwe Schroder
  • Method for manufacturing a trench capacitor
    Publication number: 20010055846
    Abstract: A method for manufacturing a trench capacitor uses a low-pressure gas phase doping for forming a buried plate as a capacitor plate. The use of the low-pressure gas phase doping reduces process costs and improves capacitor properties.
    Type: Application
    Filed: March 19, 2001
    Publication date: December 27, 2001
    Inventors: Gustav Beckmann, Moritz Haupt, Anke Krasemann, Alexandra Lamprecht, Dietmar Ottenwalder, Jens-Uwe Sachse, Martin Schrems
  • Method for monitoring nitrogen processes
    Publication number: 20010055824
    Abstract: The novel method allows monitoring of nitrogen processes by making use of the fact that the incorporation of nitrogen near the surface in silicon, or in a thin silicon nitride layer on the silicon surface, inhibits the diffusion of oxygen during the subsequent thermal oxidation. Accordingly, the oxidation rate of the thermal oxidation is reduced and the growth of the oxide layer on the silicon surface is inhibited. The thickness of the oxide layer is thus used as a measure for the nitrogen content, i.e., for the quality of the nitrogen process.
    Type: Application
    Filed: June 14, 2001
    Publication date: December 27, 2001
    Inventors: Thomas Gartner, Alexandra Lamprecht, Dietmar Ottenwalder, Jorg Schulze