Patents by Inventor Dietmar P. Knipp

Dietmar P. Knipp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing organic electronic devices on deposited dielectric materials
    Patent number: 6869821
    Abstract: A deposited dielectric (e.g., PECVD silicon nitride) formed on an inexpensive glass or plastic foil substrate is modified to facilitate the formation of high mobility organic semiconductor films. In one embodiment, the dielectric is plasma treated using nitrogen or argon gas to reduce the surface roughness of the dielectric layer below 5 nm (peak-to-valley). An organic semiconductor film (e.g., pentacene) grown on the modified dielectric exhibits high mobility and large polycrystalline grain sizes.
    Type: Grant
    Filed: December 30, 2002
    Date of Patent: March 22, 2005
    Assignee: Xerox Corporation
    Inventors: Dietmar P. Knipp, John E. Northrup, Robert A. Street
  • Method for producing organic electronic devices on deposited dielectric materials
    Publication number: 20040124416
    Abstract: A deposited dielectric (e.g., PECVD silicon nitride) formed on an inexpensive glass or plastic foil substrate is modified to facilitate the formation of high mobility organic semiconductor films. In one embodiment, the dielectric is plasma treated using nitrogen or argon gas to reduce the surface roughness of the dielectric layer below 5 nm (peak-to-valley). An organic semiconductor film (e.g., pentacene) grown on the modified dielectric exhibits high mobility and large polycrystalline grain sizes.
    Type: Application
    Filed: December 30, 2002
    Publication date: July 1, 2004
    Inventors: Dietmar P. Knipp, John E. Northrup, Robert A. Street