Abstract: Embodiment provide a transceiver of a wireless communication system, wherein the transceiver is configured to operate in a sidelink in-coverage, out of coverage or partial coverage scenario, wherein the transceiver is configured to operate, in dependence on a QoS and/or QoS requirement of the transceiver, using a selected configuration out of a set of configurations.

Abstract: A user device, UE, for a wireless communication network is described. The wireless communication network including a plurality of user devices, UEs. The UE communicates with one or more further user devices, UEs, of the wireless communication network over a sidelink. Responsive to a trigger for a transmission, the UE performs a sensing process for determining resources to be used for the transmission. The sensing process includes a plurality of radio resource selection processes. The UE selects from the plurality of radio resource selection processes the radio resource selection process to be applied dependent on one or more of the following: a traffic density, a traffic density of different types of traffic, a user density within a predefined area around the UE.

Abstract: A method and device for ion beam processing of surfaces of a substrate positions the substrate to face an ion beam, and a new technologically-defined pattern of properties is established. According to the method, the current geometrical effect pattern of the ion beam on the surface of the substrate is adjusted depending on the known pattern of properties and the new technologically-defined pattern of properties, and depending upon the progress of the processing, by modifying the beam characteristic and/or by pulsing the ion beam. A device for carrying out the method includes a substrate support for holding at least one substrate, which can be moved along an Y-axis and an X-axis, and an ion beam source for generating an ion beam, which is perpendicular to the surface to be processed of the substrate in the Z-axis or which may be arranged in an axis, inclined in relation to the Z-axis. The distance between the ion beam source and the surface to be processed of the substrate may be fixed or variable.

Abstract: In order to provide a process for curing a coating, in particular a radiation-curable coating, on a work piece, which allows coatings even on difficult to access regions of a three-dimensional work piece to be cured in a simple manner, it is proposed that the work piece is disposed in a plasma generation area, and that in the plasma generation area a plasma is generated, by means of which the coating is at least partially cured.

Abstract: A method and device for ion beam processing of surfaces of a substrate positions the substrate to face an ion beam, and a new technologically-defined pattern of properties is established. According to the method, the current geometrical effect pattern of the ion beam on the surface of the substrate is adjusted depending on the known pattern of properties and the new technologically-defined pattern of properties, and depending upon the progress of the processing, by modifying the beam characteristic and/or by pulsing the ion beam. A device for carrying out the method includes a substrate support for holding at least one substrate, which can be moved along an Y-axis and an X-axis, and an ion beam source for generating an ion beam, which is perpendicular to the surface to be processed of the substrate in the Z-axis or which may be arranged in an axis, inclined in relation to the Z-axis. The distance between the ion beam source and the surface to be processed of the substrate may be fixed or variable.

Abstract: The invention relates to an electron cyclotron resonance (ECR) plasma source having a linear plasma discharge opening (9, 27, 28, 30), comprised of a plasma chamber, inside of which a centered wave distributor is provided, and having a multi-pole magnetic field arrangement in the area of the linear plasma discharge opening. The centered wave distributor consists of at least two separate wave distributors (3, 4) that are placed inside a respective partial plasma chamber (1, 2, 21, 22, 32, 23). A linear partial plasma discharge opening (7, 8, 23, 24, 34, 35) and multi-pole magnetic field arrangements (10, 11, 38, 39) are provided on each partial plasma chamber (1, 2, 21, 22, 32, 23). The at least two linear plasma discharge openings (7, 8, 23, 24, 34, 35) are arranged with regard to one another in such a manner that, together, they form at least one plasma discharge opening (9, 27, 28, 30) of the ECR plasma source.

Abstract: In order to provide a process for curing a coating, in particular a radiation-curable coating, on a work piece, which allows coatings even on difficult to access regions of a three-dimensional work piece to be cured in a simple manner, it is proposed that the work piece is disposed in a plasma generation area, and that in the plasma generation area a plasma is generated, by means of which the coating is at least partially cured.

Abstract: The invention relates to a process for producing a multifunctional multi-ply layer on a transparent plastic substrate and to a multifunctional multi-ply layer produced thereby.

Abstract: Hard coatings for mechanically and corrosively stressed elements are applicable to arbitrarily chosen substrate materials. The mentioned elements can be tools, cutting inserts or bearings. Further, applications are possible in electronics and optics and also for decorative purposes. Hard coatings on the basis of carbon and boron nitride, produced by known techniques, are obtained which can be used in a wide field of application, exhibiting, besides a high hardness, maximum adhesion and good protection against wear and corrosion at high temperatures. The C and B/N coatings consist of amorphous network structures with short range orders similar to that of the hexagonal crystalline phases of carbon and boron nitride, have hydrogen concentrations between 5 atom-% and 50 atom-% and additional components consisting of metals and/or boron and or silicon and/or noble gases in the concentration range between 1 atom-% and 85 atom-%.