Abstract: An interconnection array is provided including a plurality of line conductors having segments substantially parallel to each other in each of two or more parallel regions such that the composite length of the segments essentially matches said length of the array; the line conductors crossing in one or more crossing regions located between the parallel regions so that no line conductor remains adjacent to the same pair of neighboring line conductors in any of segments of the array; wherein adjacent line conductors in the parallel regions are spaced one pitch from each other and wherein multiple line conductors are offset up or down no more than two pitches in each of the crossing regions.

Abstract: An electro-optic coupler made of consecutively deposited layers of semiconductor material has an one waveguide layer a multiple-quantum-well structure which exhibits a strong index of refraction dispersion in response to an electric field. Another waveguide layer separated from the multiple-quantum-well structure by a coupling layer is made of a bulk semiconductor material having an index of refraction which is comparatively unaffected by the electric field and which is substantially equal to one of the values of the index of refraction that the quantum well structure can assume. Resonant coupling of the waveguide layers is affected by a uniform electric field generated by a voltage applied between metalization on a confinement layer covering the top waveguide and a substrate on which the waveguide layers and coupling layer are grown over a lower confinement layer. When the indices of refraction of the two waveguides are equal, light injected into one waveguide is switched to the other.

Abstract: This invention is directed to a three-terminal semiconductor device which acts as a differential light detector. It is based on the operation of two reverse biased PIN photodetectors where one receives light through its P-doped surface and the other through its N-doped surface. The device is configured to be compatible with applications in integrated optics and with fiber optics. In principle of operation the invention relies on the production and collection of electrons from the detection of a first light intensity and the production and collection of holes from the detection of the intensity of a second light. This is done in a connected or integrated semiconductor which allows the recombination of electrons and holes. The excess number of electrons or holes, depending upon which light is received with the greatest intensity, is extracted from the recombination region and is the basis for the output signal.

Abstract: An improved device for modulating the intensity of a light beam is described which comprises a first isoceles optical prism; a first dielectric layer, a thin metallic layer, and a second dielectric layer substantially identical in composition and thickness to the first dielectric layer deposited successively on the base of the first prism; a second isoceles optical prism disposed with the base thereof contacting the last deposited layer; and a controllable source of electrical current connected to the metallic layer for establishing and modulating an electro-magnetic field at the respective surfaces of the metallic layer.