Patents by Inventor Dimitar Dimitrov
Dimitar Dimitrov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8400867Abstract: A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.Type: GrantFiled: December 12, 2011Date of Patent: March 19, 2013Assignee: Seagate Technology LLCInventors: Dimitar Dimitrov, Olle Gunnar Heinonen, Dexin Wang, Haiwen Xi
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Publication number: 20120143928Abstract: Various embodiments of systems and methods for file system transaction log flush optimization are described herein. An optimizer is working as an intelligent processing unit, autonomously determining the best possible time to flush all collected transaction data modifications to the file system when operating under high load, or flushing each modification separately under low load. When operating under high load, batches of data modifications are collected and written together to the file system in a single write operation, thus decreasing the number of write operations and achieving better utilization of the system resources.Type: ApplicationFiled: December 7, 2010Publication date: June 7, 2012Inventors: FILIP YANKOV, DIMITAR DIMITROV, Vania Slavchova Dimitrova, Ivan Dimitrov Dimitrov, NIKOLAI TANKOV
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Patent number: 8098541Abstract: A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.Type: GrantFiled: April 12, 2011Date of Patent: January 17, 2012Assignee: Seagate Technology LLCInventors: Dimitar Dimitrov, Olle Gunnar Heinonen, Dexin Wang, Haiwen Xi
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Publication number: 20110310513Abstract: An apparatus includes a magnetoresistive read element, first and second primary shields, and an auxiliary shield. The magnetoresistive read element is located between the first and the second primary shields, and the auxiliary shield is located between the magnetoresistive read element and the first primary shield. In another embodiment, the apparatus includes a plurality of magnets located between a plurality of shields for a magnetoresistive element. The plurality of magnets is optionally offset from the magnetoresistive element.Type: ApplicationFiled: June 16, 2010Publication date: December 22, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Dimitar Dimitrov, Dion Song
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Publication number: 20110213273Abstract: According to certain described aspects, multiple acoustic sensing elements are employed in a variety of beneficial ways to provide improved physiological monitoring, among other advantages. In various embodiments, sensing elements can be advantageously employed in a single sensor package, in multiple sensor packages, and at a variety of other strategic locations in the monitoring environment. According to other aspects, to compensate for skin elasticity and attachment variability, an acoustic sensor support is provided that includes one or more pressure equalization pathways. The pathways can provide an air-flow channel from the cavity defined by the sensing elements and frame to the ambient air pressure.Type: ApplicationFiled: October 14, 2010Publication date: September 1, 2011Inventors: Valery G. Telfort, Dimitar Dimitrov, Phi Trang, Massi Joe E. Kiani, Anand Sampath
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Publication number: 20110213271Abstract: According to certain described aspects, multiple acoustic sensing elements are employed in a variety of beneficial ways to provide improved physiological monitoring, among other advantages. In various embodiments, sensing elements can be advantageously employed in a single sensor package, in multiple sensor packages, and at a variety of other strategic locations in the monitoring environment. According to other aspects, to compensate for skin elasticity and attachment variability, an acoustic sensor support is provided that includes one or more pressure equalization pathways. The pathways can provide an air-flow channel from the cavity defined by the sensing elements and frame to the ambient air pressure.Type: ApplicationFiled: October 14, 2010Publication date: September 1, 2011Inventors: Valery G. Telfort, Dimitar Dimitrov, Phi Trang
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Patent number: 7998758Abstract: A magnetic element and a method for making a magnetic element. The method includes patterning a first electrode material to form a first electrode on a substrate and depositing filler material on the substrate around the first electrode. The method further includes polishing to form a planar surface of filler and the first electrode. A magnetic cell is formed on the planar surface and a second electrode is formed on the magnetic cell. In some embodiments, the first electrode has an area that is at least 2:1 to the area of the magnetic cell.Type: GrantFiled: February 20, 2009Date of Patent: August 16, 2011Assignee: Seagate Technology LLCInventors: Yongchul Ahn, Shuiyuan Haung, Antoine Khoueir, Paul Anderson, Lili Jia, Christina Laura Hutchinson, Ivan Ivanov, Dimitar Dimitrov
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Publication number: 20110194337Abstract: A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.Type: ApplicationFiled: April 21, 2011Publication date: August 11, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Xiaobin Wang, Yong Lu, Haiwen Xi, Yuankai Zheng, Yiran Chen, Harry Hongyue Liu, Dimitar Dimitrov, Wei Tian, Brian Seungwhan Lee
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Patent number: 7940600Abstract: A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.Type: GrantFiled: December 2, 2008Date of Patent: May 10, 2011Assignee: Seagate Technology LLCInventors: Dimitar Dimitrov, Olle Gunnar Heinonen, Dexin Wang, Haiwen Xi
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Patent number: 7936592Abstract: A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.Type: GrantFiled: February 3, 2009Date of Patent: May 3, 2011Assignee: Seagate Technology LLCInventors: Xiaobin Wang, Yong Lu, Haiwen Xi, Yuankai Zheng, Yiran Chen, Harry Hongyue Liu, Dimitar Dimitrov, Wei Tan, Brian Seungwhan Lee
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Publication number: 20110069536Abstract: Spin torque magnetic logic devices that function as memory devices and that can be reconfigured or reprogrammed as desired. In some embodiments, the logic device is a single magnetic element, having a pinned layer, a free layer, and a barrier layer therebetween, or in other embodiments, the logic device has two magnetic elements in series. Two input currents can be applied through the element to configure or program the element. In use, logic input data, such as current, is passed through the programmed element, defining the resistance across the element and the resulting logic output. The magnetic logic device can be used for an all-function-in-one magnetic chip.Type: ApplicationFiled: November 30, 2010Publication date: March 24, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Xiaohua Lou, Dimitar Dimitrov, Song Xue
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Publication number: 20100309717Abstract: Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region; and a gate stack structure over the substrate and between the source region and drain region. The gate stack structure includes a first solid electrolyte cell and a second solid electrolyte cell. The solid electrolyte cells having a capacitance that is controllable between at least two states. A gate contact layer is electrically coupled to a voltage source. The first solid electrolyte cell and the second solid electrolyte cell separate the gate contact layer from the substrate.Type: ApplicationFiled: August 17, 2010Publication date: December 9, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Xuguang Wang, Shuiyuan Huang, Dimitar Dimitrov, Michael Tang, Song Xue
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Publication number: 20100274099Abstract: An acoustic sensor is configured to provide accurate and robust measurement of bodily sounds under a variety of conditions, such as in noisy environments or in situations in which stress, strain, or movement may be imparted onto a sensor with respect to a patient. Embodiments of the sensor provide a conformable electrical shielding, as well as improved acoustic and mechanical coupling between the sensor and the measurement site.Type: ApplicationFiled: December 21, 2009Publication date: October 28, 2010Applicant: MASIMO CorporationInventors: Valery G. Telfort, Predrag Pudar, Dimitar Dimitrov, Phi Trang, Ammar Al-Ali
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Publication number: 20100195380Abstract: A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.Type: ApplicationFiled: February 3, 2009Publication date: August 5, 2010Applicant: Seagate Technology LLCInventors: Xiaobin Wang, Yong Lu, Haiwen Xi, Yuankai Zheng, Yiran Chen, Harry Hongyue Liu, Dimitar Dimitrov, Wei Tian, Brian Seungwhan Lee
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Publication number: 20100109110Abstract: Magnetic spin-torque memory cells, often referred to as magnetic tunnel junction cells, which have magnetic anisotropies (i.e., magnetization orientation at zero field and zero current) of the associated ferromagnetic layers aligned perpendicular to the wafer plane, or “out-of-plane”. A memory cell may have a ferromagnetic free layer, a first pinned reference layer and a second pinned reference layer, each having a magnetic anisotropy perpendicular to the substrate. The free layer has a magnetization orientation perpendicular to the substrate that is switchable by spin torque from a first orientation to an opposite second orientation.Type: ApplicationFiled: March 5, 2009Publication date: May 6, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Dexin Wang, Haiwen Xi, Yuankai Zheng, Dimitar Dimitrov
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Publication number: 20100109107Abstract: A magnetic element and a method for making a magnetic element. The method includes patterning a first electrode material to form a first electrode on a substrate and depositing filler material on the substrate around the first electrode. The method further includes polishing to form a planar surface of filler and the first electrode. A magnetic cell is formed on the planar surface and a second electrode is formed on the magnetic cell. In some embodiments, the first electrode has an area that is at least 2:1 to the area of the magnetic cell.Type: ApplicationFiled: February 20, 2009Publication date: May 6, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Yongchul Ahn, Shuiyuan Huang, Antoine Khoueir, Paul Anderson, Lili Jia, Christina Laura Hutchinson, Ivan Ivanov, Dimitar Dimitrov
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Publication number: 20090289240Abstract: Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A first solid electrolyte cell is over the insulating layer and has a capacitance that is controllable between at least two states and is proximate the source region. A second solid electrolyte cell is over the insulating layer and has a capacitance or resistance that is controllable between at least two states and is proximate the drain region. An insulating element isolates the first solid electrolyte cell from the second solid electrolyte cell. A first anode is electrically coupled to the first solid electrolyte cell. The first solid electrolyte cell is between the anode and the insulating layer. A second anode is electrically coupled to the second solid electrolyte cell. The second solid electrolyte cell is between the anode and the insulating layer.Type: ApplicationFiled: May 20, 2008Publication date: November 26, 2009Applicant: SEAGATE TECHNOLOGY LLCInventors: Xuguang Wang, Shuiyuan Huang, Dimitar Dimitrov, Michael Tang, Song Xue
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Publication number: 20090290408Abstract: Spin torque magnetic logic devices that function as memory devices and that can be reconfigured or reprogrammed as desired. In some embodiments, the logic device is a single magnetic element, having a pinned layer, a free layer, and a barrier layer therebetween, or in other embodiments, the logic device has two magnetic elements in series. Two input currents can be applied through the element to configure or program the element. In use, logic input data, such as current, is passed through the programmed element, defining the resistance across the element and the resulting logic output. The magnetic logic device can be used for an all-function-in-one magnetic chip.Type: ApplicationFiled: May 23, 2008Publication date: November 26, 2009Applicant: SEAGATE TECHNOLOGY LLCInventors: Xiaohua Lou, Dimitar Dimitrov, Song Xue
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Publication number: 20050063100Abstract: A magnetic sensor having adjustable electrical dimensions, such as electrical read width and electrical stripe height, is disclosed. The magnetic sensor includes a sensor stack with one or more bias electrodes positioned with respect to the sensor stack. The electrical width or electrical stripe height of the sensor stack is a function of a voltage applied to the bias electrodes. The electric field produced by the bias electrodes alters the electrical profile of the magnetoresistive device.Type: ApplicationFiled: September 23, 2003Publication date: March 24, 2005Applicant: Seagate Technology LLCInventors: Michael Kautzky, David Larson, Bradley Miller, Erick Singleton, Dimitar Dimitrov, Eric Granstrom, Song Xue
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Patent number: 6700752Abstract: A read/write head with a bottom shield on a slider substrate and a shared shield spaced apart from the bottom shield. A write head is deposited on the shared shield. A read sensor is spaced apart by reader magnetic gaps from the bottom shield and the shared shield. Electrically insulating layers in the reader magnetic gaps form a thermal resistance between the read sensor and the shields. A thermally conducting nonmagnetic layer in a reader magnetic gap reduces the thermal resistance without a corresponding reduction in the reader magnetic gaps.Type: GrantFiled: March 27, 2002Date of Patent: March 2, 2004Assignee: Seagate Technology LLCInventors: Dimitar Dimitrov, Michael C. Kautzky, Sunita B. Gangopadhyay, Jumna P. Ramdular, Sisavath M. Bounnakhom, I-Fei Tsu, Robert W. Lamberton