Patents by Inventor Dimitar V. Dimitrov
Dimitar V. Dimitrov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10580439Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one multilayer adhesion layer positioned on at least a portion of the at least one external surface, the multilayer adhesion layer including a first layer and a second layer, with the second layer being in contact with the portion of the at least one external surface of the NFT, the first layer including: yttrium (Y), scandium (Sc), zirconium (Zr), hafnium (Hf), silicon (Si), boron (B), tantalum (Ta), barium (Ba), aluminum (Al), titanium (Ti), niobium (Nb), calcium (Ca), beryllium (Be), strontium (Sr), magnesium (Mg), lithium (Li), or combinations thereof; and the second layer including: lanthanum (La), boron (B), lutetium (Lu), aluminum (Al), deuterium (D), cerium (Ce), uranium (U), praseodymium (Pr), yttrium (Y), silicon (Si), iridium (Ir), carbon (C), thorium (Th), scandium (Sc), titanium (Ti), vanadium (V), phosphorus (P), barium (Ba), europium (Eu), or combinations thereof.Type: GrantFiled: October 15, 2018Date of Patent: March 3, 2020Assignee: Seagate Technology LLCInventors: Justin Brons, Tong Zhao, Yuhang Cheng, Dimitar V. Dimitrov
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Publication number: 20190051319Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one multilayer adhesion layer positioned on at least a portion of the at least one external surface, the multilayer adhesion layer including a first layer and a second layer, with the second layer being in contact with the portion of the at least one external surface of the NFT, the first layer including: yttrium (Y), scandium (Sc), zirconium (Zr), hafnium (Hf), silicon (Si), boron (B), tantalum (Ta), barium (Ba), aluminum (Al), titanium (Ti), niobium (Nb), calcium (Ca), beryllium (Be), strontium (Sr), magnesium (Mg), lithium (Li), or combinations thereof; and the second layer including: lanthanum (La), boron (B), lutetium (Lu), aluminum (Al), deuterium (D), cerium (Ce), uranium (U), praseodymium (Pr), yttrium (Y), silicon (Si), iridium (Ir), carbon (C), thorium (Th), scandium (Sc), titanium (Ti), vanadium (V), phosphorus (P), barium (Ba), europium (Eu), or combinations thereof.Type: ApplicationFiled: October 15, 2018Publication date: February 14, 2019Inventors: Justin Brons, Tong Zhao, Yuhang Cheng, Dimitar V. Dimitrov
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Patent number: 10102872Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one multilayer adhesion layer positioned on at least a portion of the at least one external surface, the multilayer adhesion layer including a first layer and a second layer, with the second layer being in contact with the portion of the at least one external surface of the NFT, the first layer including: yttrium (Y), scandium (Sc), zirconium (Zr), hafnium (Hf), silicon (Si), boron (B), tantalum (Ta), barium (Ba), aluminum (Al), titanium (Ti), niobium (Nb), calcium (Ca), beryllium (Be), strontium (Sr), magnesium (Mg), lithium (Li), or combinations thereof; and the second layer including: lanthanum (La), boron (B), lutetium (Lu), aluminum (Al), deuterium (D), cerium (Ce), uranium (U), praseodymium (Pr), yttrium (Y), silicon (Si), iridium (Ir), carbon (C), thorium (Th), scandium (Sc), titanium (Ti), vanadium (V), phosphorus (P), barium (Ba), europium (Eu), or combinations thereof.Type: GrantFiled: March 17, 2016Date of Patent: October 16, 2018Assignee: Seagate Technology LLCInventors: Justin Brons, Tong Zhao, Yuhang Cheng, Dimitar V. Dimitrov
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Patent number: 10054649Abstract: A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.Type: GrantFiled: August 16, 2016Date of Patent: August 21, 2018Assignee: Seagate Technology LLCInventors: Eric W. Singleton, Qing He, Jae-Young Yi, Matt Johnson, Zheng Gao, Dimitar V. Dimitrov, Song S. Xue
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Patent number: 9685202Abstract: A near-field transducer includes an enlarged portion and a peg protruding from a first edge. The enlarged portion has a second edge facing away from the first edge. The near-field transducer includes a heat sink disposed on the enlarged portion and with an outline shape that matches that of the enlarged portion. The heat sink is disposed at a first separation distance from the first edge of the enlarged portion and a second, greater, separation distance from the second edge of the enlarged portion. The first separation distance is greater than the second separation distance.Type: GrantFiled: January 21, 2016Date of Patent: June 20, 2017Assignee: SEAGATE TECHNOLOGY LLCInventors: John Charles Duda, Scott M. Franzen, Weibin Chen, Tae-Woo Lee, Dimitar V. Dimitrov, Huaqing Yin
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Publication number: 20160356861Abstract: A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap :layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.Type: ApplicationFiled: August 16, 2016Publication date: December 8, 2016Inventors: Eric W. Singleton, Qing He, Jae-Young Yi, Matt Johnson, Zheng Gao, Dimitar V. Dimitrov, Song S. Xue
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Publication number: 20160284365Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one multilayer adhesion layer positioned on at least a portion of the at least one external surface, the multilayer adhesion layer including a first layer and a second layer, with the second layer being in contact with the portion of the at least one external surface of the NFT, the first layer including: yttrium (Y), scandium (Sc), zirconium (Zr), hafnium (Hf), silicon (Si), boron (B), tantalum (Ta), barium (Ba), aluminum (Al), titanium (Ti), niobium (Nb), calcium (Ca), beryllium (Be), strontium (Sr), magnesium (Mg), lithium (Li), or combinations thereof; and the second layer including: lanthanum (La), boron (B), lutetium (Lu), aluminum (Al), deuterium (D), cerium (Ce), uranium (U), praseodymium (Pr), yttrium (Y), silicon (Si), iridium (Ir), carbon (C), thorium (Th), scandium (Sc), titanium (Ti), vanadium (V), phosphorus (P), barium (Ba), europium (Eu), or combinations thereof.Type: ApplicationFiled: March 17, 2016Publication date: September 29, 2016Inventors: Justin Brons, Tong Zhao, Yuhang Cheng, Dimitar V. Dimitrov
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Patent number: 9442171Abstract: A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.Type: GrantFiled: January 9, 2008Date of Patent: September 13, 2016Assignee: SEAGATE TECHNOLOGY LLCInventors: Eric W. Singleton, Qing He, Jae-Young Yi, Matt Johnson, Zheng Gao, Dimitar V. Dimitrov, Song S. Xue
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Patent number: 9293159Abstract: A data sensor may be configured with a magnetic stack disposed between first and second magnetic shields. The magnetic stack can have a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations. The first magnetically free lamination may have a first sub-layer constructed of a transition metal material and disposed between a second sub-layer constructed of a negative magnetostriction material and a third sub-layer constructed of a positive magnetostriction material.Type: GrantFiled: January 30, 2015Date of Patent: March 22, 2016Assignee: Seagate Technology LLCInventors: Wonjoon Jung, Dimitar V. Dimitrov, Mark T. Kief
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Publication number: 20150221326Abstract: A data sensor may be configured with a magnetic stack disposed between first and second magnetic shields. The magnetic stack can have a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations. The first magnetically free lamination may have a first sub-layer constructed of a transition metal material and disposed between a second sub-layer constructed of a negative magnetostriction material and a third sub-layer constructed of a positive magnetostriction material. have a magnetic stack configured without a fixed magnetization structure and with a barrier layer disposed between first and second magnetically free layers.Type: ApplicationFiled: January 30, 2015Publication date: August 6, 2015Inventors: Wonjoon Jung, Dimitar V. Dimitrov, Mark T. Kief
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Patent number: 9041083Abstract: Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.Type: GrantFiled: January 24, 2013Date of Patent: May 26, 2015Assignee: Seagate Technology LLCInventors: Yuankai Zheng, Dimitar V. Dimitrov
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Patent number: 9030864Abstract: Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned to reflect at least a portion of electrons back into the free magnetic layer.Type: GrantFiled: September 12, 2012Date of Patent: May 12, 2015Assignee: Seagate Technology LLCInventors: Yuankai Zheng, Dimitar V. Dimitrov, Wei Tian, Dexin Wang, Zheng Gao, Xiaobin Wang
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Patent number: 8922950Abstract: A magnetic shield that is capable of enhancing magnetic reading. In accordance with various embodiments, a magnetic element has a magnetically responsive stack shielded from magnetic flux and biased to a predetermined default magnetization by at least one lateral side shield that has a transition metal layer disposed between first and second ferromagnetic layers.Type: GrantFiled: May 6, 2011Date of Patent: December 30, 2014Assignee: Seagate Technology LLCInventors: Eric W. Singleton, Jae-Young Yi, Kaizhong Gao, Dimitar V. Dimitrov, Dian Song, Vladyslav A. Vas′ko
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Patent number: 8908429Abstract: A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.Type: GrantFiled: March 4, 2013Date of Patent: December 9, 2014Assignee: Seagate Technology LLCInventors: Dimitar V. Dimitrov, Olle Gunnar Heinonen, Dexin Wang, Haiwen Xi
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Patent number: 8803519Abstract: An apparatus and associated method are generally directed to a magnetic sensor. A sensor may have a stack with an air bearing surface (ABS) and a biasing surface opposite the ABS. A biasing yoke can be disposed between a biasing magnet and the stack with the biasing magnet having a lower magnet moment than the biasing yoke.Type: GrantFiled: July 29, 2011Date of Patent: August 12, 2014Assignee: Seagate Technology LLCInventors: Dimitar V. Dimitrov, Dian Song, Jason B. Gadbois
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Patent number: 8780619Abstract: An apparatus and method for storing data in a semiconductor memory. In accordance with some embodiments, the semiconductor memory has a continuous storage layer of soft ferromagnetic material having opposing top and bottom surfaces with overall length and width dimensions and an overall thickness dimension between the opposing top and bottom surfaces. A plurality of spaced apart, discrete reference layers are adjacent a selected one of the opposing top or bottom surfaces of the continuous storage layer with each having a fixed magnetic orientation. A plurality of spaced apart, discrete barrier layers are disposed in contacting relation between the discrete reference layers and the continuous storage layer.Type: GrantFiled: July 3, 2013Date of Patent: July 15, 2014Assignee: Seagate Technology LLCInventors: Haiwen Xi, Yuankai Zheng, Xiaobin Wang, Dimitar V. Dimitrov, Pat J. Ryan
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Patent number: 8766382Abstract: A free ferromagnetic data storage layer of an MRAM cell is coupled to a free ferromagnetic stabilization layer, which stabilization layer is directly electrically coupled to a contact electrode, on one side, and is separated from the free ferromagnetic data storage layer, on an opposite side, by a spacer layer. The spacer layer provides for the coupling between the two free layers, which coupling is one of: a ferromagnetic coupling and an antiferromagnetic coupling.Type: GrantFiled: January 27, 2011Date of Patent: July 1, 2014Assignee: Seagate Technology LLCInventors: Haiwen Xi, Kaizhong Gao, Dimitar V. Dimitrov, Song S. Xue
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Patent number: 8766230Abstract: Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region; and a gate stack structure over the substrate and between the source region and drain region. The gate stack structure includes a first solid electrolyte cell and a second solid electrolyte cell. The solid electrolyte cells having a capacitance that is controllable between at least two states. A gate contact layer is electrically coupled to a voltage source. The first solid electrolyte cell and the second solid electrolyte cell separate the gate contact layer from the substrate.Type: GrantFiled: August 17, 2010Date of Patent: July 1, 2014Assignee: Seagate Technology LLCInventors: Xuguang Wang, Shuiyuan Huang, Dimitar V. Dimitrov, Michael Xuefei Tang, Song S. Xue
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Patent number: 8705213Abstract: A disclosed device having a principle axis and including a magnetoresistive stack, the magnetoresistive stack having first and second opposing surfaces, the magnetoresistive stack including a free layer, a spacer layer, and a reference layer, wherein the spacer layer is positioned between the first and reference layer, the free layer includes magnetic material having a free magnetic orientation in a first plane; the spacer layer includes nonmagnetic material; and the reference layer includes magnetic material having a pinned magnetic orientation in a second plane, wherein the second plane is perpendicular to the first plane and parallel to the principle axis of the device; an insulating layer at least a portion of the outer surface of the magnetoresistive stack; a shielding layer surrounding at least a portion of the insulating layer; and a conducting layer, wherein the conducting layer provides electrical connection between the magnetoresistive stack and the shielding layer.Type: GrantFiled: February 26, 2010Date of Patent: April 22, 2014Assignee: Seagate Technology LLCInventors: William Hill Butler, Dimitar V. Dimitrov
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Patent number: 8687413Abstract: A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.Type: GrantFiled: February 28, 2013Date of Patent: April 1, 2014Assignee: Seagate Technology LLCInventors: Yuankai Zheng, Haiwen Xi, Dimitar V. Dimitrov, Dexin Wang