Abstract: Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

Abstract: A magnetoresistive read sensor with improved sensitivity and stability is described. The sensor is a trilayer stack positioned between two electrodes. The trilayer stack has two free layers separated by a nonmagnetic layer and a biasing magnet positioned at the rear of the stack and separated from the air bearing surface by the stripe height distance. Current in the sensor is confined to regions close to the air bearing surface by an insulator layer to enhance reader sensitivity.

Abstract: A magnetic sensor includes a freelayer, a reference layer and a front shield. The freelayer has a magnetization direction substantially perpendicular to the planar orientation of the layer and extends to the media confronting surface. The reference layer has a magnetization direction substantially in the plane of the layer and substantially perpendicular to the magnetization direction of the freelayer. The reference layer is recessed from the media confronting surface and a front shield is positioned between the reference layer and the media confronting surface thereby reducing the shield-to-shield spacing and increasing the areal density of the reader.

Abstract: Nonvolatile resistive memory devices are disclosed. In some embodiments, the memory devices comprise multilayer structures including electrodes, one or more resistive storage layers, and separation layers. The separation layers insulate the resistive storage layers to prevent charge leakage from the storage layers and allow for the use of thin resistive storage layers. In some embodiments, the nonvolatile resistive memory device includes a metallic multilayer comprising two metallic layers about an interlayer. A dopant at an interface of the interlayer and metallic layers can provide a switchable electric field within the multilayer.

Abstract: A spin oscillator device generates a microwave output in response to an applied DC current. The device includes a spin momentum transfer (SMT) stack including a top electrode, a free layer, a nonmagnetic layer, a pinned magnetic structure, and a bottom electrode. A local magnetic field source adjacent the SMT stack applies a local magnetic field to the free layer to cause the magnetization direction of the free layer to be oriented at a tilt angle with respect to plane of the free layer. The local magnetic field source can include coils or an electromagnet structure, or permanent magnets in close proximity to the SMT stack.

Abstract: A spin oscillator device generates a microwave output in response to an applied DC current. The device includes a spin momentum transfer (SMT) stack including a top electrode, a free layer, a nonmagnetic layer, a pinned magnetic structure, and a bottom electrode. A local magnetic field source adjacent the SMT stack applies a local magnetic field to the free layer to cause the magnetization direction of the free layer to be oriented at a tilt angle with respect to plane of the free layer. The local magnetic field source can include coils or an electromagnet structure, or permanent magnets in close proximity to the SMT stack.