Patents by Inventor Dimitri Daineka

Dimitri Daineka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of texturing the surface of a silicon substrate, and textured silicon substrate for a solar cell
    Patent number: 8592949
    Abstract: The invention relates to a method for texturing the surface of a gaseous phase silicon substrate, and to a textured silicon substrate for a solar cell. The method includes at least a step a) of exposing the surface to an SF6/O2 radiofrequency plasma for a duration of 2 to 30 minutes in order to produce a silicon substrate having a textured surface having pyramidal structures, the SF6/O2 ratio being 2 to 10. During step a) the power density generated using the radiofrequency plasma is greater than or equal to 2500 mW/cm2, and the SF6/O2 pressure in the reaction chamber is lower than or equal to 100 mTorrs, so as to produce a silicon substrate having a textured surface having inverted pyramidal structures.
    Type: Grant
    Filed: August 23, 2010
    Date of Patent: November 26, 2013
    Assignees: Ecole Polytechnique, Centre National de la Recherche Scientifique
    Inventors: Pere Roca I Cabarrocas, Mario Moreno, Dimitri Daineka
  • METHOD OF TEXTURING THE SURFACE OF A SILICON SUBSTRATE, AND TEXTURED SILICON SUBSTRATE FOR A SOLAR CELL
    Publication number: 20120146194
    Abstract: The invention relates to a method for texturing the surface of a gaseous phase silicon substrate, and to a textured silicon substrate for a solar cell. The method includes at least a step a) of exposing the surface to an SF6/O2 radiofrequency plasma for a duration of 2 to 30 minutes in order to produce a silicon substrate having a textured surface having pyramidal structures, the SF6/O2 ratio being 2 to 10. During step a) the power density generated using the radiofrequency plasma is greater than or equal to 2500 mW/cm2, and the SF6/O2 pressure in the reaction chamber is lower than or equal to 100 mTorrs, so as to produce a silicon substrate having a textured surface having inverted pyramidal structures.
    Type: Application
    Filed: August 23, 2010
    Publication date: June 14, 2012
    Applicants: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, ECOLE POLYTECHNIQUE
    Inventors: Pere Roca I Cabarrocas, Mario Moreno, Dimitri Daineka