Patents by Inventor Dimitri Dini
Dimitri Dini has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9559496Abstract: A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure comprises at least one first filter element disposed downstream of the semiconductor layer sequence in the emission direction and it has at least one layer comprising a material that is non-transparent to electromagnetic radiation.Type: GrantFiled: November 24, 2015Date of Patent: January 31, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
-
Patent number: 9559497Abstract: A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction. The at least one filter element comprises a surface structure comprising a roughening and/or at least one layer comprising a non-transparent material.Type: GrantFiled: November 24, 2015Date of Patent: January 31, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
-
Patent number: 9531158Abstract: A laser light source, comprising a semiconductor layer sequence on a substrate and having an active region and a radiation coupling out area having first and second partial regions and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation, the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction and which is remote from the substrate.Type: GrantFiled: November 24, 2015Date of Patent: December 27, 2016Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
-
Patent number: 9478945Abstract: An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.Type: GrantFiled: May 15, 2012Date of Patent: October 25, 2016Assignee: OSRAM Opto Semiconductors GmbHInventors: Adrian Stefan Avramescu, Ines Pietzonka, Dimitri Dini
-
Patent number: 9407063Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).Type: GrantFiled: February 20, 2015Date of Patent: August 2, 2016Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
-
Publication number: 20160087404Abstract: A laser light source, comprising a semiconductor layer sequence on a substrate and having an active region and a radiation coupling out area having first and second partial regions and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation, the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction and which is remote from the substrate.Type: ApplicationFiled: November 24, 2015Publication date: March 24, 2016Inventors: Alfred LELL, Christoph EICHLER, Wolfgang SCHMID, Soenke TAUTZ, Wolfgang REILL, Dimitri DINI
-
Publication number: 20160079733Abstract: A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure comprises at least one first filter element disposed downstream of the semiconductor layer sequence in the emission direction and it has at least one layer comprising a material that is non-transparent to electromagnetic radiation.Type: ApplicationFiled: November 24, 2015Publication date: March 17, 2016Inventors: Alfred LELL, Christoph EICHLER, Wolfgang SCHMID, Soenke TAUTZ, Wolfgang REILL, Dimitri DINI
-
Publication number: 20160079734Abstract: A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction. The at least one filter element comprises a surface structure comprising a roughening and/or at least one layer comprising a non-transparent material.Type: ApplicationFiled: November 24, 2015Publication date: March 17, 2016Inventors: Alfred LELL, Christoph EICHLER, Wolfgang SCHMID, Soenke TAUTZ, Wolfgang REILL, Dimitri DINI
-
Publication number: 20150162722Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).Type: ApplicationFiled: February 20, 2015Publication date: June 11, 2015Inventors: Alfred LELL, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
-
Patent number: 9048631Abstract: A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation. At least one of the functional layers is designed as a ridge of the ridge waveguide structure. The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge.Type: GrantFiled: April 18, 2012Date of Patent: June 2, 2015Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Christoph Eichler, Dimitri Dini, Alfred Lell
-
Patent number: 8964808Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).Type: GrantFiled: December 17, 2008Date of Patent: February 24, 2015Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
-
Patent number: 8879596Abstract: A semiconductor laser includes a semiconductor body having an active region that generates radiation and a ridge-shaped region, wherein the ridge-shaped region has a longitudinal axis running along an emission direction, a central axis of the semiconductor body runs in the emission direction and the longitudinal axis is arranged in a manner offset with respect to the central axis in a transverse direction.Type: GrantFiled: November 12, 2010Date of Patent: November 4, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Dimitri Dini, Marc Schillgalies
-
Publication number: 20140138703Abstract: An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.Type: ApplicationFiled: May 15, 2012Publication date: May 22, 2014Applicant: OSRAM Opto Semiconductors GmbHInventors: Adrian Stefan Avramescu, Ines Pietzonka, Dimitri Dini
-
Publication number: 20140064311Abstract: A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation At least one of the functional layers is designed as a ridge of the ridge waveguide structure The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge.Type: ApplicationFiled: April 18, 2012Publication date: March 6, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Christoph Eichler, Dimitri Dini, Alfred Lell
-
Publication number: 20130148683Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).Type: ApplicationFiled: December 17, 2008Publication date: June 13, 2013Applicant: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
-
Patent number: 8369370Abstract: A laser light source including a semiconductor layer sequence having an active region and a radiation coupling-out area having a first partial region and a second partial region different than the first partial region, and a filter structure. The active region generates, during operation, coherent first electromagnetic radiation having a first wavelength range and incoherent second electromagnetic radiation having a second wavelength range. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first and second partial regions. The second wavelength range includes the first wavelength range, and the filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction.Type: GrantFiled: December 17, 2008Date of Patent: February 5, 2013Assignee: Osram Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
-
Publication number: 20120287956Abstract: A semiconductor laser includes a semiconductor body having an active region that generates radiation and a ridge-shaped region, wherein the ridge-shaped region has a longitudinal axis running along an emission direction, a central axis of the semiconductor body runs in the emission direction and the longitudinal axis is arranged in a manner offset with respect to the central axis in a transverse direction.Type: ApplicationFiled: November 12, 2010Publication date: November 15, 2012Applicant: OSRAM Opto Semiconductors GmbHInventors: Dimitri Dini, Marc Schillgalies
-
Publication number: 20120039072Abstract: In at least one embodiment of the light source (1), the latter includes at least one semiconductor laser (2), which is designed to emit a primary radiation (P) of a wavelength of between 360 nm and 485 nm inclusive. Furthermore, the light source (1) comprises at least one conversion medium (3), which is arranged downstream of the semiconductor laser (2) and is designed to convert at least part of the primary radiation (P) into secondary radiation (S) of a different, greater wavelength than the primary radiation (P). The radiation (R) emitted by the light source (1) here displays an optical coherence length which amounts to at most 50 ?m.Type: ApplicationFiled: October 19, 2009Publication date: February 16, 2012Inventors: Alfred Lell, Sönke Tautz, Uwe Strauss, Martin Rudolf Behringer, Stefanie Brüninghoff, Dimitri Dini, Dominik Eisert, Christoph Eichler
-
Publication number: 20110188530Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).Type: ApplicationFiled: December 17, 2008Publication date: August 4, 2011Applicant: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini