Patents by Inventor Dimitri Kioussis
Dimitri Kioussis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230317463Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.Type: ApplicationFiled: June 5, 2023Publication date: October 5, 2023Inventors: Krishna NITTALA, Sarah Michelle BOBEK, Kwangduk Douglas LEE, Ratsamee LIMDULPAIBOON, Dimitri KIOUSSIS, Karthik JANAKIRAMAN
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Patent number: 11694902Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.Type: GrantFiled: February 18, 2021Date of Patent: July 4, 2023Assignee: Applied Materials, Inc.Inventors: Krishna Nittala, Sarah Michelle Bobek, Kwangduk Douglas Lee, Ratsamee Limdulpaiboon, Dimitri Kioussis, Karthik Janakiraman
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Publication number: 20230197416Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.Type: ApplicationFiled: February 13, 2023Publication date: June 22, 2023Applicant: Applied Materials, Inc.Inventors: Saravjeet Singh, Kenneth D. Schatz, Alan Tso, Marlin Wijekoon, Dimitri Kioussis
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Patent number: 11581165Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.Type: GrantFiled: January 25, 2021Date of Patent: February 14, 2023Assignee: Applied Materials, Inc.Inventors: Saravjeet Singh, Kenneth D. Schatz, Alan Tso, Marlin Wijekoon, Dimitri Kioussis
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Publication number: 20230033086Abstract: A memory array including a varying width channel is disclosed. The array includes a plurality of WLs, which are above a layer, where the layer can be, for example, a Select Gate Source (SGS) of the memory array, or an isolation layer to isolate a first deck of the array from a second deck of the array. The channel extends through the plurality of word lines and at least partially through the layer. In an example, the channel comprises a first region and a second region. The first region of the channel has a first width that is at least 1 nm different from a second width of the second region of the channel. In an example, the first region extends through the plurality of word lines, and the second region extends through at least a part of the layer underneath the plurality of word lines. In one case, the first width is at least 1 nm less than a second width of the second region of the channel.Type: ApplicationFiled: February 7, 2020Publication date: February 2, 2023Inventors: Chen WANG, Dipanjan BASU, Richard FASTOW, Dimitri KIOUSSIS, Yi LI, Ebony Lynn MAYS, Dimitrios PAVLOPOULOS, Junyen TEWG
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Publication number: 20220262643Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.Type: ApplicationFiled: February 18, 2021Publication date: August 18, 2022Inventors: Krishna NITTALA, Sarah Michelle BOBEK, Kwangduk Douglas LEE, Ratsamee LIMDULPAIBOON, Dimitri KIOUSSIS, Karthik JANAKIRAMAN
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Publication number: 20210265134Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.Type: ApplicationFiled: January 25, 2021Publication date: August 26, 2021Applicant: Applied Materials, Inc.Inventors: Saravjeet Singh, Kenneth D. Schatz, Alan Tso, Marlin Wijekoon, Dimitri Kioussis
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Patent number: 10903054Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.Type: GrantFiled: December 19, 2017Date of Patent: January 26, 2021Assignee: Applied Materials, Inc.Inventors: Saravjeet Singh, Kenneth D. Schatz, Alan Tso, Marlin Wijekoon, Dimitri Kioussis
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Patent number: 10593553Abstract: Exemplary methods for etching a germanium-containing material may include forming a plasma of a fluorine-containing precursor in a remote plasma region of a semiconductor processing chamber. The methods may include flowing effluents of the fluorine-containing precursor through apertures defined in a chamber component. The apertures may be coated with a catalytic material. The methods may include reducing a concentration of fluorine radicals in the plasma effluents with the catalytic material. The methods may also include delivering the plasma effluents to a processing region of the semiconductor processing chamber. A substrate having an exposed region of a germanium-containing material may be housed within the processing region. The methods may further include etching the germanium-containing material.Type: GrantFiled: August 6, 2018Date of Patent: March 17, 2020Assignee: Applied Materials, Inc.Inventors: Mikhail Korolik, Nitin Ingle, Dimitri Kioussis
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Publication number: 20190189401Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.Type: ApplicationFiled: December 19, 2017Publication date: June 20, 2019Applicant: Applied Materials, Inc.Inventors: Saravjeet Singh, Kenneth D. Schatz, Alan Tso, Marlin Wijekoon, Dimitri Kioussis
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Publication number: 20190043727Abstract: Exemplary methods for etching a germanium-containing material may include forming a plasma of a fluorine-containing precursor in a remote plasma region of a semiconductor processing chamber. The methods may include flowing effluents of the fluorine-containing precursor through apertures defined in a chamber component. The apertures may be coated with a catalytic material. The methods may include reducing a concentration of fluorine radicals in the plasma effluents with the catalytic material. The methods may also include delivering the plasma effluents to a processing region of the semiconductor processing chamber. A substrate having an exposed region of a germanium-containing material may be housed within the processing region. The methods may further include etching the germanium-containing material.Type: ApplicationFiled: August 6, 2018Publication date: February 7, 2019Applicant: Applied Materials, Inc.Inventors: Mikhail Korolik, Nitin Ingle, Dimitri Kioussis
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Patent number: 10177227Abstract: The present disclosure provides methods for forming horizontal gate-all-around (hGAA) structure devices. In one example, a method includes selectively and laterally etching a first group of sidewalls of a first layer in a multi-material layer, wherein the multi-material layer comprises repeating pairs of the first layer and a second layer, the first and the second layers having the first group and a second group of sidewalls respectively, the first group of sidewalls from the first layer exposed through openings defined in the multi-material layer and a group of inner spacers formed atop of the second group of sidewalls from the second layer, forming a recess from the first group of sidewalls of the first layer and defining a vertical wall inward from an outer vertical surface of the inner spacer formed atop of the second layers, and forming an epi-silicon layer from the recess of the first layer.Type: GrantFiled: August 28, 2017Date of Patent: January 8, 2019Assignee: Applied Materials, Inc.Inventors: Naomi Yoshida, Lin Dong, Shiyu Sun, Myungsun Kim, Nam Sung Kim, Dimitri Kioussis, Mikhail Korolik, Gaetano Santoro, Vanessa Pena
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Patent number: 10043674Abstract: Exemplary methods for etching a germanium-containing material may include forming a plasma of a fluorine-containing precursor in a remote plasma region of a semiconductor processing chamber. The methods may include flowing effluents of the fluorine-containing precursor through apertures defined in a chamber component. The apertures may be coated with a catalytic material. The methods may include reducing a concentration of fluorine radicals in the plasma effluents with the catalytic material. The methods may also include delivering the plasma effluents to a processing region of the semiconductor processing chamber. A substrate having an exposed region of a germanium-containing material may be housed within the processing region. The methods may further include etching the germanium-containing material.Type: GrantFiled: August 4, 2017Date of Patent: August 7, 2018Assignee: Applied Materials, Inc.Inventors: Mikhail Korolik, Nitin Ingle, Dimitri Kioussis
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Patent number: 6110666Abstract: The invention encompasses a locus control subregion that possesses chromatin opening domain activity, the activity conferring reproducible activation of tissue-specific expression on a linked transgene to a non-physiological level when the transgene is integrated in single copy in the genome of a host cell.Type: GrantFiled: June 7, 1995Date of Patent: August 29, 2000Assignee: Medical Research CouncilInventors: Franklin Gerardus Grosveld, James Ellis, Dimitris Kioussis
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Patent number: 5866759Abstract: The provision of cell lines from virtually any cell type of the animal body is greatly facilitated by transgenic non-human eukaryotic animals of the invention in which at least some cells have (i) a differentiation inhibiting sequence chromosomally incorporated under the control of a non-constitutive promotor and/or (ii) a differentiation inhibiting sequence which is itself conditionally active. Said genes are chromosomally incorporated under the control of a promotor such that expression of said sequence is normally held below an effective level, thus allowing normal cell development. However, cells taken from said animal may be prevented from completing differentiation to a non-dividing state in tissue culture by activating expression of said sequence.Type: GrantFiled: July 2, 1997Date of Patent: February 2, 1999Assignee: Ludwig Institute For Cancer ResearchInventors: Parmjit Singh Jat, Dimitris Kioussis, Mark David Noble
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Patent number: 5849997Abstract: Vectors for the integration of a gene into the genetic material of a mammalian host cell such that the gene may be expressed by the host cell comprise a promoter and the gene and include a dominant activator sequence capable of eliciting host cell-type restricted, integration site independent, copy number dependent expression of the gene.Type: GrantFiled: June 7, 1995Date of Patent: December 15, 1998Assignee: Medical Research Council Ltd.Inventors: Franklin Grosveld, Dimitris Kioussis
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Patent number: 5770398Abstract: Vectors for the integration of a gene into the genetic material of a mammalian host cell such that the gene may be expressed by the host cell comprise a promoter and the gene and include a dominant activator sequence capable of eliciting host cell-type restricted, integration site independent, copy number dependent expression of the gene.Type: GrantFiled: June 7, 1995Date of Patent: June 23, 1998Assignee: Medical Research CouncilInventors: Franklin Grosveld, Dimitris Kioussis
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Patent number: 5744456Abstract: Vectors for the integration of a gene into the genetic material of a mammalian host cell such that the gene may be expressed by the host cell comprise a promoter and the gene and include a dominant activator sequence capable of eliciting host cell-type restricted, integration site independent, copy number dependent expression of the gene.Type: GrantFiled: June 7, 1995Date of Patent: April 28, 1998Assignee: Medical Research CouncilInventors: Franklin Grosveld, Dimitris Kioussis
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Patent number: 5736359Abstract: Vectors for the integration of a gene into the genetic material of a mammalian host cell such that the gene may be expressed by the host cell comprise a promoter and the gene and include a dominant activator sequence capable of eliciting host cell-type restricted, integration site independent, copy number dependent expression of the gene.Type: GrantFiled: June 7, 1995Date of Patent: April 7, 1998Assignee: Medical Research CouncilInventors: Franklin Grosveld, Dimitris Kioussis
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Patent number: 5688692Abstract: The provision of cell lines from virtually any cell type of the animal body is greatly facilitated by transgenic non-human eukaryotic animals of the invention in which at least some cells have (i) a differentiation inhibiting sequence chromosomally incorporated under the control of a non-constitutive promotor and/or (ii) a differentiation inhibiting sequence which is itself conditionally active. Said genes are chromosomally incorporated under the control of a promotor such that expression of said sequence is normally held below an effective level, thus allowing normal cell development. However, cells taken from said animal may be prevented from completing differentiation to a non-dividing state in tissue culture by activating expression of said sequence.Type: GrantFiled: February 11, 1993Date of Patent: November 18, 1997Assignee: Ludwig Institute for Cancer ResearchInventors: Parmjit Singh Jat, Dimitris Kioussis, Mark David Noble