Abstract: A semiconductor processing system includes a processing chamber configured to perform a semiconductor manufacturing process on each of a plurality of wafers. The processing chamber includes at least one consumable component, and a substrate handling module located proximate the processing chamber and in communication with the processing chamber via a wafer access port. The wafer handling module includes a wafer handling robot configured to transfer each of the wafers between to the substrate handling module and the processing chamber through the wafer access port, and an optical diagnostic system including an optical sensor configured to detect an optical signal from the at least one consumable component.

Abstract: A method of manufacturing semiconductor devices includes repeatedly performing a transfer operation which transfers each of a plurality of semiconductor wafers between a substrate handling module and a processing chamber through a wafer access port, the processing chamber including at least one consumable component. Using the processing chamber, a semiconductor manufacturing process is performed on each of the plurality of semiconductor wafers; and detecting an optical signal from the at least one consumable component during a time when the processing chamber is not performing the semiconductor manufacturing process on the wafers.

Abstract: A scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) apparatus that includes a scanning electron microscope, an x-ray detector, and an auxiliary acceleration voltage source. The scanning electron microscope includes a sample holder, and a layered electron beam column arranged to output an electron beam towards the sample holder at an initial beam energy. The auxiliary acceleration voltage source is to apply an auxiliary acceleration voltage between the sample holder and the layered electron beam column to accelerate the electron beam to a final beam energy. At the final beam energy, the electron beam is capable of generating x-rays at multiple wavelengths from a larger range of atomic species than the electron beam at the initial beam energy.

Abstract: A scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) apparatus that includes a scanning electron microscope, an x-ray detector, and an auxiliary acceleration voltage source. The scanning electron microscope includes a sample holder, and a layered electron beam column arranged to output an electron beam towards the sample holder at an initial beam energy. The auxiliary acceleration voltage source is to apply an auxiliary acceleration voltage between the sample holder and the layered electron beam column to accelerate the electron beam to a final beam energy. At the final beam energy, the electron beam is capable of generating x-rays at multiple wavelengths from a larger range of atomic species than the electron beam at the initial beam energy.

Abstract: An electron analyzer and its method of operation useful for determining the intensity of a peak in the electron spectrum. The invention is particularly useful for determining the intensity of an Auger peak of a given element in the sample being probed and associating the intensity with a concentration of that element in the sample. The electron spectrum is measured above and below the anticipated peak. The data near the peak are not used. The remaining data above the peak and below the peak are fit to respective equations linearly dependent upon the measurement energy. The difference of the two equations at the value of the peak energy is associated with the peak intensity and the elemental concentration. The invention can be applied to measuring nitrogen concentration in a thin protective film of amorphous carbon or diamond.

Abstract: An electron analyzer and its method of operation useful for determining the intensity of a peak in the electron spectrum. The invention is particularly useful for determining the intensity of an Auger peak of a given element in the sample being probed and associating the intensity with a concentration of that element in the sample. The electron spectrum is measured above and below the anticipated peak. The data near the peak are not used. The remaining data above the peak and below the peak are fit to respective equations linearly dependent upon the measurement energy. The difference of the two equations at the value of the peak energy is associated with the peak intensity and the elemental concentration. The invention can be applied to measuring nitrogen concentration in a thin protective film of amorphous carbon or diamond.