Patents by Inventor Dimitri Lebedev

Dimitri Lebedev has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile memory with predictive programming
    Patent number: 8243520
    Abstract: A method of operating an integrated circuit includes applying at least one first programming pulse to a plurality of non-volatile memory cells to adjust a level of a storage parameter of each of the non-volatile memory cells, the at least one first programming pulse defined by a plurality of pulse parameters each having a fixed valued, and determining a fail count by measuring the number of non-volatile memory cells of the plurality of non-volatile memory cells having a storage parameter level exceeding a verify level. The method further includes determining a change in an programming behavior of the plurality of non-volatile memory cells based on the fail count, adjusting a value of at least one pulse parameter of at least one second programming pulse defined by the plurality of pulse parameters to a desired value based on the change in programming behavior, and applying the at least one second programming pulse to the plurality non-volatile memory cells.
    Type: Grant
    Filed: November 2, 2009
    Date of Patent: August 14, 2012
    Assignee: Infineon Technologies AG
    Inventors: Nigel Chan, Wolf Allers, Michael Bollu, Dimitri Lebedev, Jan Otterstedt, Christian Peters
  • NON-VOLATILE MEMORY WITH PREDICTIVE PROGRAMMING
    Publication number: 20110103150
    Abstract: A method of operating an integrated circuit includes applying at least one first programming pulse to a plurality of non-volatile memory cells to adjust a level of a storage parameter of each of the non-volatile memory cells, the at least one first programming pulse defined by a plurality of pulse parameters each having a fixed valued, and determining a fail count by measuring the number of non-volatile memory cells of the plurality of non-volatile memory cells having a storage parameter level exceeding a verify level. The method further includes determining a change in an programming behavior of the plurality of non-volatile memory cells based on the fail count, adjusting a value of at least one pulse parameter of at least one second programming pulse defined by the plurality of pulse parameters to a desired value based on the change in programming behavior, and applying the at least one second programming pulse to the plurality non-volatile memory cells.
    Type: Application
    Filed: November 2, 2009
    Publication date: May 5, 2011
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Nigel Chan, Wolf Allers, Michael Bollu, Dimitri Lebedev, Jan Otterstedt, Christian Peters