Abstract: Approaches herein provide a device, such as a battery protection device, including a cathode current collector and an anode current collector provided atop a substrate, a cathode provided atop the cathode current collector, and an electrolyte layer provided over the cathode. An interlayer, such as one or more layers of silicon, antimony, magnesium, titanium, magnesium lithium, and/or silver lithium, is formed over the electrolyte layer. An anode contact layer, such as an anode or anode current collector, is then provided over the interlayer. By providing the interlayer atop the electrolyte layer prior to anode contact layer deposition, lithium from the cathode side alloys with the interlayer, thus providing a more isotropic or uniaxial detachment of the anode contact layer.

Abstract: In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 6 to about 11 and applying a cathodic potential in the range of about ?1 V to about ?6 V. The workpiece includes a barrier layer disposed between the seed layer and a dielectric surface of the workpiece, the barrier layer including a first metal having a standard electrode potential more negative than 0 V and the seed layer including a second metal having a standard electrode potential more positive than 0 V.

Abstract: In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 1 to about 6, and applying a cathodic potential in the range of about ?0.5 V to about ?4 V. The workpiece includes a barrier layer disposed between the seed layer and a dielectric surface of the workpiece, the barrier layer including a first metal having a standard electrode potential more negative than 0 V and the seed layer including a second metal having a standard electrode potential more positive than 0 V.

Abstract: Approaches herein provide a device, such as a battery protection device, including a cathode current collector and an anode current collector provided atop a substrate, a cathode provided atop the cathode current collector, and an electrolyte layer provided over the cathode. An interlayer, such as one or more layers of silicon, antimony, magnesium, titanium, magnesium lithium, and/or silver lithium, is formed over the electrolyte layer. An anode contact layer, such as an anode or anode current collector, is then provided over the interlayer. By providing the interlayer atop the electrolyte layer prior to anode contact layer deposition, lithium from the cathode side alloys with the interlayer, thus providing a more isotropic or uniaxial detachment of the anode contact layer.

Abstract: A thin film battery may include: a contact layer, the contact layer disposed in a first plane and comprising a cathode current collector and an anode current collector pad; a device stack disposed on the cathode current collector, the device stack comprising a cathode and solid state electrolyte; an anode current collector disposed on the device stack; a thin film encapsulant, the thin film encapsulant disposed over the device stack, wherein the solid state electrolyte encapsulates the cathode.

Abstract: A method for masklessly fabricating a thin film battery, including securing a substrate to a substrate carrier of a first deposition chamber with a first clamping ring having an aperture, performing a first deposition on the substrate to form a first TFB layer, the aperture of the first clamping ring defining a footprint of the first layer, wherein areas of the substrate covered by the first clamping ring are excluded from the first blanket deposition, securing the substrate to a substrate carrier of a second deposition chamber with a second clamping ring having an aperture, and performing a second deposition on the substrate to form a second TFB layer over the first layer, the aperture of the second clamping ring defining a footprint of the second layer, wherein areas of the substrate and the first layer covered by the second clamping ring are excluded from the second blanket deposition.

Abstract: A thin film device may include an active device region, where the active device region comprises a selective expansion region. The thin film device may further include a polymer layer disposed adjacent to the active device region and encapsulating the active device region, the polymer layer comprising a plurality of polymer sub-layers. A first polymer sub-layer of the plurality of polymer sub-layers may have a first hardness, while a second polymer sub-layer of the plurality of polymer sub-layers has a second hardness, the second hardness being different from the first hardness.

Abstract: A thin film battery may include: a cathode current collector, the cathode current collector being disposed in a first plane; a device stack disposed on the cathode current collector, the device stack comprising an anode current collector, the anode current collector being disposed in a second plane, above the first plane; and a thin film encapsulant, the thin film encapsulant disposed above the device stack, wherein the thin film encapsulant comprises a first portion extending along a surface of the anode current collector and a second portion extending along a plurality of sides of the device stack, wherein the cathode current collector extends under the second portion of the thin film encapsulant and outside of the thin film encapsulant; and wherein the anode current collector extends under the first portion of the thin film encapsulant and outside of the thin film encapsulant.

Abstract: A thin film device. The thin film device may include: an active device region, the active device region comprising a diffusant; and a thin film encapsulant disposed adjacent to the active device region and encapsulating at least a portion of the active device region, the thin film encapsulant comprising: a first layer, the first layer disposed immediately adjacent the active device region and comprising a soft and pliable material; and a second layer disposed on the first layer, the second layer comprising a rigid dielectric material or rigid metal material.

Abstract: A solid state thin film battery may comprise: an adhesion promotion and intermixing barrier layer on a substrate, the layer comprising an electrically insulating material having a thickness in the range of 50 nm to 5,000 nm; a metal adhesion layer on the adhesion promotion and intermixing barrier layer; a current collector layer on the metal adhesion layer; a cathode layer on the current collector layer; an electrolyte layer on the cathode layer; and an anode layer on the electrolyte layer; wherein the device layers form a stack on the thin substrate; and wherein the adhesion promotion layer prevents cracking of the stack and delamination from the thin substrate of the stack during fabrication of the stack, including annealing of the cathode at a temperature in the range of 500° C. to 800° C., and/or intermixing of the current collector and cathode layers during annealing of the cathode layer.

Abstract: In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 1 to about 6, and applying a cathodic potential in the range of about ?0.5 V to about ?4 V. The workpiece includes a barrier layer disposed between the seed layer and a dielectric surface of the workpiece, the barrier layer including a first metal having a standard electrode potential more negative than 0 V and the seed layer including a second metal having a standard electrode potential more positive than 0 V.

Abstract: In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes obtaining a workpiece including a dielectric surface; forming a barrier layer on the dielectric surface; depositing a seed layer on the barrier layer, wherein the barrier and seed stack includes at least one metal having a standard electrode potential of less than 0.34 V; and depositing a metallization layer on the seed layer using a diluted acid bath in a pH range of about 1 to about 5 and a current density in the range of about 10 mA/cm2 to about 30 mA/cm2.

Abstract: In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 6 to about 11 and applying a cathodic potential in the range of about ?1 V to about ?6 V. The workpiece includes a barrier layer disposed between the seed layer and a dielectric surface of the workpiece, the barrier layer including a first metal having a standard electrode potential more negative than 0 V and the seed layer including a second metal having a standard electrode potential more positive than 0 V.